C5521

2SC5657 PANASONIC | Alldatasheet

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Horizontal Deflection Transistor Series for TV I Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe- operation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced features contribute to higher performing, more reliable home-use TVs that cost less. I Features G Withstands ultrahigh voltage : 1500V/1600V/1700V/1800V/2000V G Low loss:VCE(sat)<3V G Broad area of safe-operation. New publication, effective from Sep 12 2000. ¦ The products and specifications are subject to change without any notice. Please ask for the latest product standards to guarantee the satisfaction of your product requirements. I Spacifications I Applications G TVs G Wide-screen TVs G Digital TVs Ic (A) 2SC5622/2SC5572 V CBO (V) 15007 2000 2SC5518/2SC5523 2SC5517/2SC5522 2SC5519/2SC5524 2SC5516/2SC5584 2SC5546 18 2SC5553/2SC5597 2SC5591/2SC5591A to 14 to 29 to 29 to 25 to 32 to 36 Built-in Not built-in fH (kHz) 15.75 Package Now Compact packaging TOP-3E/3D TOP-3E/3D TOP-3E/3D TOP-3E/3L TOP-3E TOP-3E TOP-3E/3L Possible 1500 1700 to 36 TOP-3E Part No. Recommended conditionParameter Damper diode Electric Characteristics Screen size(inch) Possible Possible Possible2SC5514/2SC5521 2SC5657 2SC5686 TOP-3E TOP-3E/3D TOP-3E/3D Possible Possible to 36 Built-in Not built-in 15.75 New E00065BE Semiconductor Company, Matsushita Electronics Corporation

Forward current transfer ratio Base to emitter saturation voltage Transition frequency Fall time Storage time Rating 1500 1500 600 23*3 150 -55 to +150 Unit V V V V A A A W Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg I Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature 50*1 3.0*2 *1)TC =25°C *2)Ta=25°C (Without heat sink) *3)Non-repetitive peak collector current. min Conditions V CB =1000V,IE =0 V CB =1500V,IE =0 V EB =7V,IC =0 V CE =5V,IC =6.5A IC =6.5A,IB =1.63A IC =6.5A,IB =1.63A V CE =10V,IC =0.1A,f=0.5MHz IC =6.5A,IB1 =1.63A,IB2 =-3.25A IC =6.5A,IB1 =1.63A,IB2 =-3.25A I Electrical Characteristics(TC =25°C ) Collector cutoff current Collector to emitter saturation voltage Symbol ICBO ICBO IEBO fFE V CE(sat) V BE(sat) fT Tf Tstg typ max 1.5 0.2 2.7 Unit µA mA µA V V MHz µs µs 2SC5514 Horizontal Deflection Output T ransistor 15.5±0.5 26.5±0.5 22.0±0.5 23.4 18.6±0.5 3.3±0.3 5.5±0.3 2.0 0.7±0.1 2.0 2.0 1.2 10.0 3.0±0.3 φ3.2±0.1 4.5 5.45±0.3 123 5.45±0.3 1.1±0.1 2.0±0.2 4.0 5° 5° 0.7±0.1 TOP-3E Unit:mm

Forward current transfer ratio Base to emitter saturation voltage Transition frequency Fall time Storage time Rating 1500 1500 600 150 -55 to +150 Unit V V V V A A A W Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg I Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature 70*1 3.5*2 *1)TC =25°C *2)Ta=25°C (Without heat sink) *3)Non-repetitive peak collector current. min Conditions V CB =1000V,IE =0 V CB =1500V,IE =0 V EB =7V,IC =0 V CE =5V,IC =10A IC =10A,IB =2.5A IC =10A,IB =2.5A V CE =10V,IC =0A,f=0.5MHz IC =10A,IB1 =2.5A,IB2 =-5.0A IC =10A,IB1 =2.5A,IB2 =-5.0A I Electrical Characteristics(TC =25°C ) Collector cutoff current Collector to emitter saturation voltage Symbol ICBO ICBO IEBO fFE V CE(sat) V BE(sat) fT Tf Tstg typ max 1.5 0.2 2.7 Unit µA mA µA V V MHz µs µs 2SC5516 Horizontal Deflection Output T ransistor 15.5±0.5 26.5±0.5 22.0±0.5 23.4 18.6±0.5 3.3±0.3 5.5±0.3 2.0 0.7±0.1 2.0 2.0 1.2 10.0 3.0±0.3 φ3.2±0.1 4.5 5.45±0.3 123 5.45±0.3 1.1±0.1 2.0±0.2 4.0 5° 5° 0.7±0.1 TOP-3E Unit:mm

Forward current transfer ratio Forward current transfer ratio Base to emitter saturation voltage Transition frequency Storage time Fall time Diode characteristics Rating 1600 1600 130 -55 to +150 Unit V V V A A A W Symbol V CBO V CES V EBO ICP IC IB PC Tj Tstg Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature 40*1 3*2 min 4.5 0.3 3.8 Conditions V CB =1000V,IE =0 V CB =1600V,IE =0 IE=500mA,I C =0 V CE =5V,IC =1A V CE =5V,IC =4A IC =4A,IB =0.8A IC =4A,IB =0.8A V CE =10V,IC =0.1A,f=0.5MHz IC =4.5A,IB1 =0.9A,IB2 =-1.8A IC =4.5A,IB1 =0.9A,IB2 =-1.8A IF=4A I Electrical Characteristics(TC =25°C ) Collector cutoff current Collector to emitter saturation voltage Symbol ICBO ICBO V EBO fFE fFE V CE(sat) V BE(sat) fT Tstg Tf V F typ max 1.5 0.5 Unit µA mA V V V MHz µs µs V I Absolute Maximum Ratings *1)TC=25 °C ,*2)Ta=25°°C(Without heat sink) *3)Non-repetitive peak collector current. 15.5±0.5 26.5±0.5 22.0±0.5 23.4 18.6±0.5 3.3±0.3 5.5±0.3 2.0 0.7±0.1 2.0 2.0 1.2 10.0 3.0±0.3 φ3.2±0.1 4.5 5.45±0.3 123 5.45±0.3 1.1±0.1 2.0±0.2 4.0 5° 5° 0.7±0.1 TOP-3E Unit:mm 2SC5517 Horizontal Deflection Output T ransistor

Forward current transfer ratio Base to emitter saturation voltage Transition frequency Storage time Fall time Diode characteristics Rating 1500 1500 14*3 3.5 150 -55 to +150 Unit V V V A A A W Symbol V CBO V CES V EBO ICP IC IB PC Tj Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature 40*1 3*2 min Conditions V CB =1000V,IE =0 V CB =1500V,IE =0 IE=500mA,I C =0 V CE =5V,IC =5A IC =5A,IB =1A IC =5A,IB =1A V CE =10V,IC =0.1A,f=0.5MHz IC =5A,IB1 =1A,IB2 =2A IC =5A,IB1 =1A,IB2 =2A IF=5A I Electrical Characteristics(TC =25°C ) Collector cutoff current Collector to emitter saturation voltage Symbol ICBO ICBO V EBO fFE V CE(sat) V BE(sat) fT Tstg Tf V F typ max 1.5 0.5 Unit µA mA V V V MHz µs µs V I Absolute Maximum Ratings *1)TC=25 °C ,*2)Ta=25°C(Without heat sink) *3)Non-repetitive peak collector current. 15.5±0.5 26.5±0.5 22.0±0.5 23.4 18.6±0.5 3.3±0.3 5.5±0.3 2.0 0.7±0.1 2.0 2.0 1.2 10.0 3.0±0.3 φ3.2±0.1 4.5 5.45±0.3 123 5.45±0.3 1.1±0.1 2.0±0.2 4.0 5° 5° 0.7±0.1 TOP-3E Unit:mm 2SC5518 Horizontal Deflection Output T ransistor

Forward current transfer ratio Base to emitter saturation voltage Transition frequency Storage time Fall time Diode characteristics min Conditions V CB =1000V,IE=0 V CB =1700V,IE=0 IE =500mA,I C =0 V CE =5V,IC =6A IC =6A,IB =1.2A IC =6A,IB =1.2A V CE =10V,IC =0.1A,f=0.5MHz IC =6A,IB1 =1.2A,IB2 =-2.4A IC =6A,IB1 =1.2A,IB2 =-2.4A IF=6A I Electrical Characteristics(TC =25°C) Collector cutoff current Collector to emitter saturation voltage Symbol ICBO ICBO V EBO fFE V CE(sat) V BE(sat) fT Tstg Tf V F typ max 1.5 5.0 0.5 Unit µA mA V V V MHz µs µs V I Absolute Maximum Ratings 2SC5519 Horizontal Deflection Output T ransistor 15.5±0.5 26.5±0.5 22.0±0.5 23.4 18.6±0.5 3.3±0.3 5.5±0.3 2.0 0.7±0.1 2.0 2.0 1.2 10.0 3.0±0.3 φ3.2±0.1 4.5 5.45±0.3 123 5.45±0.3 1.1±0.1 2.0±0.2 4.0 5° 5° 0.7±0.1 TOP-3E Unit:mm Rating 1700 1700 16*3 150 -55 to +150 50*1 3*2 Unit V V V A A A W Symbol V CBO V CES V EBO ICP IC IB PC Tj Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature *1)TC=25°C ,*2)Ta=25°C(Without heat sink) *3)Non-repetitive peak collector current.

Forward current transfer ratio Base to emitter saturation voltage Transition frequency Storage time Fall time Diode characteristics min Conditions V CB =1000V,IE=0 V CB =1500V,IE=0 IE =500mA,I C =0 V CE =5V,IC =4A IC =4A,IB =0.8A IC =4A,IB =0.8A V CE =10V,IC =0.1A,f=0.5MHz IC =4A,IB1 =0.8A,IB2 =-1.6A IC =4A,IB1 =0.8A,IB2 =-1.6A IF=4A I Electrical Characteristics(TC =25°C) Collector cutoff current Collector to emitter saturation voltage Symbol ICBO ICBO V EBO fFE V CE(sat) V BE(sat) fT Tstg Tf V F typ max 1.5 5.0 0.5 Unit µA mA V V V MHz µs µs V I Absolute Maximum Ratings 2SC5572 Horizontal Deflection Output T ransistor 15.5±0.5 26.5±0.5 22.0±0.5 23.4 18.6±0.5 3.3±0.3 5.5±0.3 2.0 0.7±0.1 2.0 2.0 1.2 10.0 3.0±0.3 φ3.2±0.1 4.5 5.45±0.3 123 5.45±0.3 1.1±0.1 2.0±0.2 4.0 5° 5° 0.7±0.1 TOP-3E Unit:mm Rating 1500 1500 12*3 150 -55 to +150 40*1 3*2 Unit V V V A A A W Symbol V CBO V CES V EBO ICP IC IB PC Tj Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature *1)TC=25°C ,*2)Ta=25°C(Without heat sink) *3)Non-repetitive peak collector current.

Forward current transfer ratio Base to emitter saturation voltage Transition frequency Fall time Storage time Rating 1500 1500 600 30*3 150 -55 to +150 Unit V V V V A A A W Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg I Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature 150*1 3.5*2 *1)TC =25°C *2)Ta=25°C (Without heat sink) *3)Non-repetitive peak collector current. min Conditions V CB =1000V,IE =0 V CB =1500V,IE =0 V EB =7V,IC =0 V CE =5V,IC =10A IC =10A,IB =2.5A IC =10A,IB =2.5A V CE =10V,IC =0.1A,f=0.5MHz IC =10A,IB1 =2.5A,IB2 =-5.0A IC =10A,IB1 =2.5A,IB2 =-5.0A I Electrical Characteristics(TC =25°C) Collector cutoff current Collector to emitter saturation voltage Symbol ICBO ICBO IEBO fFE V CE(sat) V BE(sat) fT Tf Tstg typ max 1.5 0.2 2.7 Unit µA mA µA V V MHz µs µs 2SC5584 Horizontal Deflection Output T ransistor TOP-3L Unit:mm 20.0±0.5 6.010.0 26.0±0.520.0±0.5 1.52.5 Solder Dip 10.9±0.5 123 2.0±0.3 3.0±0.3 1.0±0.2 5.0±0.3 3.0 4.02.0 5.45±0.3 0.6±0.2 1.5 2.7±0.3 1.5 2.0 φ 3.3±0.2 3.0

Forward current transfer ratio Base to emitter saturation voltage Transition frequency Fall time Storage time Rating 1700 1700 600 30*3 150 -55 to +150 Unit V V V V A A A W Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg I Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature 70*1 3.5*2 *1)TC =25°C *2)Ta=25°C (Without heat sink) *3)Non-repetitive peak collector current. min Conditions V CB =1000V,IE =0 V CB =1700V,IE =0 V EB =7V,IC =0 V CE =5V,IC =10A IC =10A,IB =2.5A IC =10A,IB =2.5A V CE =10V,IC =0.1A,f=0.5MHz IC =10A,IB1 =2.5A,IB2 =-5.0A IC =10A,IB1 =2.5A,IB2 =-5.0A I Electrical Characteristics(TC =25°C) Collector cutoff current Collector to emitter saturation voltage Symbol ICBO ICBO IEBO fFE V CE(sat) V BE(sat) fT Tf Tstg typ max 1.5 0.2 3.0 Unit µA mA µA V V MHz µs µs 2SC5591 Horizontal Deflection Output T ransistor 15.5±0.5 26.5±0.5 22.0±0.5 23.4 18.6±0.5 3.3±0.3 5.5±0.3 2.0 0.7±0.1 2.0 2.0 1.2 10.0 3.0±0.3 φ3.2±0.1 4.5 5.45±0.3 123 5.45±0.3 1.1±0.1 2.0±0.2 4.0 5° 5° 0.7±0.1 TOP-3E Unit:mm

Forward current transfer ratio Base to emitter saturation voltage Transition frequency Storage time Fall time Diode characteristics min Conditions V CB =1000V,IE =0 V CB =1500V,IE =0 IE =500mA,I C =0 V CE =5V,IC =2A IC =2A,IB =0.5A IC =2A,IB =0.5A V CE =10V,IC =0.1A,f=0.5MHz IC =2A,IB1 =0.4A,IB2 =-0.8A IC =2A,IB1 =0.4A,IB2 =-0.8A I Electrical Characteristics(TC =25°C) Collector cutoff current Collector to emitter saturation voltage Symbol ICBO ICBO V EBO fFE V CE(sat) V BE(sat) fT Tstg Tf V F typ max 1.5 5.0 0.5 Unit µA mA V V V MHz µs µs V I Absolute Maximum Ratings 2SC5657 Horizontal Deflection Output T ransistor 15.5±0.5 26.5±0.5 22.0±0.5 23.4 18.6±0.5 3.3±0.3 5.5±0.3 2.0 0.7±0.1 2.0 2.0 1.2 10.0 3.0±0.3 φ3.2±0.1 4.5 5.45±0.3 123 5.45±0.3 1.1±0.1 2.0±0.2 4.0 5° 5° 0.7±0.1 TOP-3E Unit:mm Rating 1500 1500 8*3 150 -55 to +150 40*1 3*2 Unit V V V A A A W Symbol V CBO V CES V EBO ICP IC IB PC Tj Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature *1)TC=25°C ,*2)Ta=25°C(Without heat sink) *3)Non-repetitive peak collector current.

Forward current transfer ratio Base to emitter saturation voltage Transition frequency Fall time Storage time Rating 2000 2000 600 30*3 150 -55 to +150 Unit V V V V A A A W Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg I Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature 70*1 3.5*2 *1)TC =25°C *2)Ta=25°C (Without heat sink) *3)Non-repetitive peak collector current. min Conditions V CB =1000V,IE =0 V CB =2000V,IE =0 V EB =7V,IC =0 V CE =5V,IC =10A IC =10A,IB =2.5A IC =10A,IB =2.5A V CE =10V,IC =0.1A,f=0.5MHz IC =10A,IB1 =2.5A,IB2 =-5.0A IC =10A,IB1 =2.5A,IB2 =-5.0A I Electrical Characteristics(TC =25°C) Collector cutoff current Collector to emitter saturation voltage Symbol ICBO ICBO IEBO fFE V CE(sat) V BE(sat) fT Tf Tstg typ max 1.5 0.2 3.0 Unit µA mA µA V V MHz µs µs 2SC5686 Horizontal Deflection Output T ransistor 15.5±0.5 26.5±0.5 22.0±0.5 23.4 18.6±0.5 3.3±0.3 5.5±0.3 2.0 0.7±0.1 2.0 2.0 1.2 10.0 3.0±0.3 φ3.2±0.1 4.5 5.45±0.3 123 5.45±0.3 1.1±0.1 2.0±0.2 4.0 5° 5° 0.7±0.1 TOP-3E Unit:mm