2SC5478 PANASONIC | Alldatasheet
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Silicon NPN triple diffusion mesa type For horizontal deflection output n Features l High breakdown voltage, and high reliability through the use of a glass passivation layer l High-speed switching l Wide area of safe operation (ASO) n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg Ratings 1700 1700 600 7.5 3.0 150 –55 to +150 Unit V V V V A A A W TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time Symbol I CBO IEBO hFE V CE(sat) V BE(sat) fT tstg tf Conditions V CB = 1000V , IE = 0 V CB = 1500V , IE = 0 V EB = 5V , IC = 0 V CE = 5V , IC = 7A IC = 7A, IB = 1.75A IC = 7A, IB = 1.75A V CE = 10V , IC = 0.1A, f = 0.5MHz IC = 7A, IB1 = 1.75A, IB2 = –3.5A min typ max 1.5 2.7 0.2 Unit mA mA mA V V MHz ms ms Unit: mm 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package 15.5–0.5 26.5–0.5 22.0–0.5 23.4 18.6–0.5 3.3–0.3 5.5–0.3 2.0 0.7–0.1 2.0 2.0 1.2 10.0 3.0–0.3 f3.2–0.1 4.5 5.45–0.3 123 5.45–0.3 1.1–0.1 2.0–0.2 4.0 5° 5° 0.7–0.1
PC —T a Area of safe operation, horizontal operation ASO 0 160 40 120 80 14020 100 60 100 (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (1) (2) (3) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 0 2000 500 15001000 <1mA f=64kHz, TC <90˚C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation. Collector to emitter voltage VCE (V) Collector current IC (A)