2SC5419 PANASONIC | Alldatasheet
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Silicon NPN triple diffusion planer type For low-frequency output amplification n Features l High collector to emitter voltage VCEO . l High transition frequency fT. l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base MT2 Type Package 2.5–0.1 4.5–0.114.5–0.5 2.5–0.5 2.5–0.5 2.5–0.1 6.9–0.1 1.05 –0.05 (1.45) 4.00.7 0.8 0.15 0.5 0.21.01.0 0.65 max. 0.45 +0.1 –0.05 0.45 +0.1 –0.05 321 Symbol V CBO V CEO V EBO ICP IC PC *1 Tj Tstg Ratings 300 300 100 1.0 150 –55 ~ +150 Unit V V V mA mA W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol I CEO V CEO V EBO hFE *1 V CE(sat) fT C ob Conditions V CE = 120V , IB = 0 IC = 100mA, IB = 0 IE = 1mA, IC = 0 V CE = 10V , IC = 5mA IC = 50mA, IB = 5mA V CB = 10V , IE = –10mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min 300 typ max 220 1.2 Unit mA V V V MHz pF *1 Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion *1hFE Rank classification Rank P Q R hFE 30 ~ 100 60 ~ 150 100 ~ 220 1.2–0.1 0.65max. 0.45 0.1 0.05 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. (HW type)
PC — Ta I C — V CE IC — V BE IC — IB V CE(sat) — IC IB — V BE hFE — IC C ob — V CB 0 160 40 120 80 14020 100 60 2.0 1.6 1.2 0.8 0.4 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 120 100 Ta=25˚C 0.8mA 0.6mA 1.2mA 1.0mA 1.6mA 1.8mA 1.4mA 0.4mA 0.2mA IB=2.0mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 120 100 VCE =10V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 120 100 VCE =10V Ta=25˚C Base current IB (mA ) Collector current IC (mA ) 1 10 100 10003 30 300 0.001 0.003 0.01 0.03 0.1 0.3 Ta=75˚C 25˚C –25˚C IC /IB=10 Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 1200 1000 800 600 400 200 VCE =10V Ta=25˚C Base to emitter voltage VBE (V) Base current IB (mA) 1 10 100 10003 30 300 300 250 200 150 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 1 3 10 30 100 f=1MHz IE=0 Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF)