2SC5297 SANYO | Alldatasheet

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Features

  • High Speed : t,= 100ns typ. + High breakdown voltage : Vopo = 1500V. - High reliability (Adoption of HVP process). + Adoption of MBIT process. Absolute Maximum Ratings at Ta =25°C unit Collector-to-Base Voltage Veso 1500 = (V : Collector-to-Emitter Voltage Vero 800 Vv Emitter-to-Base Voltage VEBo 6 v Collector Current Ig 8 A Collector Current (Pulse) Icp Ww A Collector Dissipation Po 3.0 W Te=25°C 60 W Junction Temperature T 150 °C Storage Temperature Tstg —B55to +150 °C Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current Toso Vcop=800V,Ip=0 10 pA Collector Cutoff Current Icgs Vcg=1500V,Rpp=0 1.0 mA Collector Sustaining Voltage Vcrosus) Ic=100mA,Ip=0 800 Vv Emitter Cutoff Current Igpo Vep=4V,[¢=0 10 mA C-E Saturation Voltage Voxisat) Ic=5A,Ip=1.25A 5 OV B-E Saturation Voltage Vege) Ic =5A,[gp=1.25A 15 OV DC Current Gain brea) Vop=5V,Ic=1A 20 30 hrE@) Ver=5VIc=5A 4 7 Storage Time tatg Icg=4A,Ip1=0.8A,Ipo=—1.6A 3.0 ps Fall Time ty Ig=4A,1p1 =0.8A,Ipo=—1.6A 01 02 us Switching Time Test Circuit Package Dimensions 2039C (unit : mm) JL 22.0 20.4 pii=2es _Ig1 OUTPUT o bee as > a5 sz , : 3 _ \\lory ‘9 pees a H y 4.0. 1004F =| 470,F' 210 Vee=-2V Vot=200V 3 cl P= 2 one ctor i of 3: Emitter SANYO: TO3PML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 11696YK (KOTO) TA-0585 No.5291-1/3

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BETA RENT] 7 Hep é pee SET Th, COCCI NON) 8 wo} +++ ok : ANT 2 RS Soli} Ti tt iayt th oe a SO SN OD ° 1 ewe, TTT Pe ju=siopttn= 2a | —t | {Single pulse [||| rN it _] o,f e525" Sel pulse | fii | 3 ~ 3 5 Gollector-to-Emittter Voltage, Vee - rid Colt ctor-to-Emittter Voltage.Vor = ¥ __ No.5291-2/3

2SC€5297 Pe — Ta Pc — Te aaa TTT TT tt {| at Ea ze bast | ve TN 2 4: — SO} a ay : NY pt LIN TTT B 20 to B 40} g po tT Patt IX tf 2 Ca hot [IS se TNS g N § N B10) — S 3 af TPIT 3 a 8 6: IN is} IN ‘ > LETTE TIN ° = iN 4 > ) D a ae) 0 aw BO 0 20 © 60 8 10 120 %0 160 Ambient Temperature, Ta — °C Case Temperature,Te ~ °C INo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. BW Anyone purchasing any products described or contained herein for an above-mentioned use shalt ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 1996, Specifications and information herein are subject to change without notice, No.5291-3/3