C527EZ500-S3000-2

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Technical content

Subject to change without notice. www.cree.com

FEATURES

• EZBright Power Chip LED Rf Performance − 450 nm - 110+ mW − 460 nm - 110+ mW − 470 nm - 90+ mW − 527 nm - 30+ mW
• Lambertian Radiation
• Conductive Epoxy, Solder Paste or Preforms, or Flux Eutectic Attach
• Low Forward Voltage – 3.2 V typ at 150 mA
• Single Wire Bond Structure
• Dielectric Passivation Across Epi Surface

APPLICATIONS

• General Illumination – Aircraft – Decorative Lighting – Task Lighting – Outdoor Illumination – Projection Lighting
• White LEDs
• Crosswalk Signals
• Backlighting
• Automotive Cree® EZ500-n™ Gen 2 LED Data Sheet (Cathode-up) CxxxEZ500-Sxxx00-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications, such as general illumination, automotive lighting and LCD backlighting. CxxxEZ500-Sxxx00-2 Chip Diagram D ata Sheet: CPR3EB Rev. A Anode (+) Bottom View Thickness 170 µm Side View Backside Ohmic Metallization 480 x 480 µm Top View Cathode (-), 130 x 130 µm Mesa (Junction) 450 x 450 µm

Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500-n are trademarks of Cree, Inc. CPR3EB Rev. A Cree, Inc.

4600 Silicon Drive

Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Maximum Ratings at TA = 25°C Note 1 CxxxEZ500-Sxxx00-2 DC Forward Current 300 mA Peak Forward Current 400 mA Note 3 LED Junction Temperature 150°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions ≤30°C / ≤85% RH Typical Electrical/Optical Characteristics at TA = 25°C, If = 150 mA Note 2 Part Number Forward Voltage (VF, V) Reverse Current [I(Vr=5 V), μA] Full Width Half Max (λD, nm) C450EZ500-Sxxx00-2 2.8 3.2 3.6 2 19 C460EZ500-Sxxx00-2 2.8 3.2 3.6 2 20 C470EZ500-Sxxx00-2 2.8 3.2 3.6 2 23 C527EZ500-Sxxx00-2 2.8 3.3 3.6 2 35 Mechanical Specifications CxxxEZ500-Sxxx00-2 Description Dimension Tolerance P-N Junction Area (µm) 450 x 450 ±40 Chip Area (µm) 480 x 480 ±40 Chip Thickness (µm) 170 ±25 Top Au Bond Pad Diameter (µm) 130 x 130 ±15 Au Bond Pad Thickness (µm) 3.0 ±1.0 Back Contact Metal Area (µm) 480 x 480 ±40 Back Contact Metal Thickness (µm) 3.0 ±1.0 Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a silicone encapsulated chip on MCPCB for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. 3. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. 100 150 200 250 300 350 50 60 70 80 90 100 110 120 130 140 150 Maximum Operating Current (mA) Ambient Temperature (°C) Rth j-a = 10 °C/W Rth j-a = 20 °C/W Rth j-a = 30 °C/W Rth j-a = 40 °C/W

Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500-n are trademarks of Cree, Inc. CPR3EB Rev. A Cree, Inc. Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Standard Bins for CxxxEZ500-Sxxx00-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ500-Sxxx00-2) orders may be filled with any or all bins (CxxxEZ500-0xxx-2) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 150 mA. Radiant flux values are measured using Au-plated headers without an encapsulant. C450EZ500-S11000-2 C450EZ500-0421-2 C450EZ500-0422-2 C450EZ500-0423-2 C450EZ500-0424-2 C450EZ500-0417-2 C450EZ500-0418-2 C450EZ500-0419-2 C450EZ500-0420-2 C450EZ500-0413-2 C450EZ500-0414-2 C450EZ500-0415-2 C450EZ500-0416-2 C450EZ500-0409-2 C450EZ500-0410-2 C450EZ500-0411-2 C450EZ500-0412-2 C450EZ500-0405-2 C450EZ500-0406-2 C450EZ500-0407-2 C450EZ500-0408-2 190 170 150 130 110 Dominant Wavelength (nm) Radiant Flux (mW) 447.5 450 452.5445 455 C460EZ500-S11000-2 C460EZ500-0421-2 C460EZ500-0422-2 C460EZ500-0423-2 C460EZ500-04124-2 C460EZ500-0417-2 C460EZ500-0418-2 C460EZ500-0419-2 C460EZ500-0420-2 C460EZ500-0413-2 C460EZ500-0414-2 C460EZ500-0415-2 C460EZ500-0416-2 C460EZ500-0409-2 C460EZ500-0410-2 C460EZ500-0411-2 C460EZ500-0412-2 C460EZ500-0405-2 C460EZ500-0406-2 C460EZ500-0407-2 C460EZ500-0408-2 190 170 150 130 110 Dominant Wavelength (nm) 457.5 460 462.5455 465 Radiant Flux (mW)

Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500-n are trademarks of Cree, Inc. CPR3EB Rev. A Cree, Inc. Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Standard Bins for CxxxEZ500-Sxxx00-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ500-Sxxx00-2) orders may be filled with any or all bins (CxxxEZ500-0xxx-2) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 150 mA. Radiant flux values are measured using Au-plated headers without an encapsulant. C470EZ500-S09000-2 C470EZ500-0417-2 C470EZ500-0418-2 C470EZ500-0419-2 C470EZ500-0420-2 C470EZ500-0413-2 C470EZ500-04014-2 C470EZ500-04015-2 C470EZ500-04016-2 C470EZ500-0409-2 C470EZ500-0410-2 C470EZ500-0411-2 C470EZ500-0412-2 C470EZ500-0405-2 C470EZ500-0406-2 C470EZ500-0407-2 C470EZ500-0408-2 C470EZ500-0401-2 C470EZ500-0402-2 C470EZ500-0403-2 C470EZ500-0404-2 170 150 130 110 Dominant Wavelength (nm) Radiant Flux (mW) 467.5 470 472.5465 475 C527EZ500-S3000-2 C527EZ500-0413-2 C527EZ500-0414-2 C527EZ500-0415-2 C527EZ500-0410-2 C527EZ500-0411-2 C527EZ500-0412-2 C527EZ500-0407-2 C527EZ500-0408-2 C527EZ500-0409-2 C527EZ500-0404-2 C527EZ500-0405-2 C527EZ500-0406-2 C527EZ500-0401-2 C527EZ500-0402-2 C527EZ500-0403-2 Dominant Wavelength (nm) Radiant Flux (mW) 525 530 535520

Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500-n are trademarks of Cree, Inc. CPR3EB Rev. A Cree, Inc. Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Characteristic Curves These are representative measurements for the EZBright Power Chip LED products. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. 50% 100% 150% 200% 250% 0 100 200 300 400 Relative Light Intensity If (mA) Relative Intensity vs. Forward Current 65% 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 Relative Light Intensity Junction Temperature (°C) Relative Light Intensity Vs Junction Temperature -10 0 100 200 300 400 D W Shift (nm) If (mA) Wavelength Shift vs. Forward Current 25 50 75 100 125 150 DW Shift (nm) Junction Temperature (°C) Dominant Wavelength Shift Vs Junction Temperature 100 150 200 250 300 350 400 2 2.5 3 3.5 4 If (mA) Vf (V) Forward Current vs. Forward Voltage -0.600 -0.500 -0.400 -0.300 -0.200 -0.100 0.000 25 50 75 100 125 150 Voltage Shift (V) Junction Temperature (°C) Voltage Shift Vs Junction Temperature

Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ500-n are trademarks of Cree, Inc. CPR3EB Rev. A Cree, Inc. Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip.