2SC5242_06 TOSHIBA | Alldatasheet

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Technical content

TOSHIBA Transistor Silic on NPN Triple Diffused Type 2SC5242 Power Amplifier Applications

  • High Collector breakdown voltage: V CEO = 230 V (min)
  • Complementary to 2SA1962
  • Suitable fro use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector power dissipation (Tc = 25°C) PC 130 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Unit: mm JEDEC ― JEITA ― TOSHIBA 2-16C1A Weight: 4.7 g (typ.)

Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO V CB = 230 V, IE = 0 ― ― 5.0 μA Emitter cut-off current IEBO V EB = 5 V, IC = 0 ― ― 5.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 230 ― ― V hFE (1) (Note) VCE = 5 V, IC = 1 A 55 ― 160 DC current gain hFE (2) V CE = 5 V, IC = 7 A 35 60 ― Collector-emitter saturation voltage V CE (sat) IC = 8 A, IB = 0.8 A ― 0.4 3.0 V Base-emitter voltage VBE V CE = 5 V, IC = 7 A ― 1.0 1.5 V Transition frequency fT V CE = 5 V, IC = 1 A ― 30 ― MHz Collector output capacitance Cob V CB = 10 V, IE = 0, f = 1 MHz ― 200 ― pF Note: h FE (1) classification R: 55 to 110, O: 80 to 160 Marking C5242 TOSHIBA Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code)

IC – VCE Collector current I C (A) Collector-emitter voltage V CE (V) IC – VBE Collector current I C (A) Base-emitter voltage V BE (V) hFE – IC DC current gain h FE Collector current I C (A) Collector-emitter voltage V CE (V) Collector current I C (A) Collector current I C (A) VCE (sat) – IC Collector-emitter saturation voltage VCE (sat) (V) Safe Operating Area Common emitter IC/IB = 10 Tc = 100°C 0.01 0.01 0.1 1 0.1 −25 0.3 10 100 0.03 Common emitter Tc = 25°C IB = 10 mA 800 2 4 6 8 10 600 400 250 200 150 100 300 Common emitter VCE = 5 V Tc = 100°C −25 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. IC max (pulsed)* DC operation Tc = 25°C 100 ms* 10 ms* 1 ms* VCEO max 100 300 100030 IC max (continuous) 0.1 0.3 0.5 0.03 0.05 0.01 0.1 1 10 100 Common emitter VCE = 5 V −25 100 300 Tc = 100°C

RESTRICTIONS ON PRODUCT USE 20070701-EN

  • The information contained herein is subject to change without notice.
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIB A products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconduct or Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
  • The TOSHIBA products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
  • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.
  • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringement s of patents or other rights of the third parties which may result from its use. No license is granted by implic ation or otherwise under any patents or other rights of TOSHIBA or the third parties.
  • Please contact your sales representative for product- by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.