2SC5150 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS 155205, 036203 , 30203 ae ye] | = S [oo] Fla e High Voltage : VCBO = 1700 V ——|4 | © Low Saturation Voltage : VOE (sat) = 3V (Max.) LT] ar “13 © High Speed : tp = 0.15 ys (Typ.) oo LESH ee e Collector Metal (Fin) is Fully Covered with Mold Resin. 23maxt fl al 3 oes s MAXIMUM RATINGS (Ta = 25°C) 54s 5a5 CHARACTERISTIC SYMBOL UNIT 83 Z| Collector-Base Voltage VcBO 1700 *y 123 4 Collector-Emitter Voltage VCEO a Emitter-Base Voltage =a ERO = Vv Sly cottector Collector Current c [| 10 | A 3. EMITTER | Pulse | Icp | 20 | JEDEC = Collector Power Dissipation P 50 w [eZ = (Te = 25°C) c TOSHIBA 2-16E3A Weight 55g Clyp) Storage Temperature Range —55~150 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [xay. | rye. [max. [unr] Collector Cut-off Current IcBo Vos = 1700 V, In = 0 [— [—] 1] ma] Emitter Cutoff Current | Ippo [Vep=SV, Io=0 P= = a a Collector-Emitter Breakdown ; bag [Von =5V, Ig = 1A [io a] D C Current Gain nrE@ [Vor=5V, Ip =6A [4 [= [es] Collector-Emitter Saturation o vam ferenessen P= [=| 3] Base-Emitter Saturation ris foseainmisa [= [fa | Wop = IOV, Tp SOTA =e pe Collector Output Capacitance Wop =10V. Ip =0,f=1MEz | — | 185 [— | oF | Switching Storage Time Icp=5A,Ipj(end)=1.0A | — [ 25 | 40 | Time (Fig) [Fall Time fag = 64 ki [= Torso] Q61001EAAZ @ TOSHIBA is continually working to improve the quality and the reliability of its products, Nevertheless, semiconductor devices in general can malfunction or all due to their inherent electrical Sensivty and vulnerability to physical ses. i is the responsibilty of the buyer, when ulizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook @ ‘he information contained herein is presented only as a guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication oF otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. © The information contained herein is subject to change without notice 1999-09-02 1/4
Fig.1 SWITCHING TIME TEST CIRCUIT IB Ic asKsos (Note) 1.0 nH 4.7 uF o T% TUT. 3 aha + | 1002 50 aals oi a INPUT als & 5 ar g spall ys 3 78s &B a S os i ° 7 Ly = 120 pH 15.6 ps VpD cy = 4600 pF voc i i i i “90% IcP COLLECTOR i i CURRENT i i Base Current Gradient Fe oe 02 i i Jp1 + Ipe i H dip / dt = ———— (A/ ps) i_tstg i tf B tate # (Note) : Leakage Inductance of secondary winding LB is 1.2 ~H 1999-09-02 2/4
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3 °° HR HEN ANTE wat LETTE LETT SST 3K SINGLE NONREPETITIVE ESSENSE PULSE. Te = 25°C NONE 0.03] CURVES MUST BE DERATED |__| \\IINUiI S| LINEARLY WITH INCREASE IN| |_| \\\\{||II THMPERATURE | | UN sos N 1 3 10 30 100 300 1000 COLLECTOR-EMITTER VOLTAGE VcE (V) 1999-09-02 4/4