2SC5149 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION Unit in mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS a aoe ose aed TCAs | BRE oA Fo| 3, Se? als © High Speed : tp = 0.2 ps (Typ.) in Br ie g g . i : = a bis High Voltage : Vopo = 1500V A eee . _ 4. bb © Low Saturation Voltage : VOR (gat) = 5V (Max.) aaa j dz e Bult-in Damper Type 0.95Maxl| | <| © Collector Metal (Fin) is Fully Covered with Mold Resin. al - MAXIMUM RATINGS (Ta = 25°C) ot bese ” | 1. BASE CHARACTERISTIC SYMBOL UNIT By AS ctor Collector-Base Voltage VCBO 1500 3. EMITTER Collector-Emitter Voltage Vcrco | 600 [| V_||JEDEC = Emitter-Base Voltage VEBO Joo [ ic | 8 Collector Current De c A |[TOSHIBA _2-1683A eee HBase Current | Ip | 4 | a _| Wola 55¢ (vp Collector Power Dissipation P w Storage Temperature Range —55~150 EQUIVALENT CIRCUIT COLLECTOR BASE oat 50.0 (Typ.)° EMITTER @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations. in which @ malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed. by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1999-09-02 1/4
ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Icpo__| Vos = 1500, In = 0 [ — | — [| 1i][ ma] Emitter Cut-off Current Impo _|Vep=5V, Ic =0 [ 66 | — | 200 | ma | Emitter-Base Breakdown a vo [acemicne | «[-[-[¥ DC Current Gain hrg@) [Vor =5V, Io =5A | 38 | — | 80 | Collector-Emitter Saturation _ _ rorms foreanisn [| -[ «[ Base-Emitter Saturation ton feeansien [|e fal | Forward Voltage - seen | -w ee Some ‘Transition Frequency Von =10V, Ig =01A D2 |= PM | Collector Output Capacitance Vcp = 10V, Ip = 0, f= 1 MHz [ — | 110 | — | pF | Switching Icp=5A, Ipi(end)=11A, [| — | 4] 6) Time Fall Time fH = 31.5 kHz [= peetos| “ 1999-09-02 2/4
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