2SC5148 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION Unit in mm DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS 155205, 036203 , 30203 ae ye] | = S [oo] Fla e High Speed : tg = 0.15 ys (Typ.) ——|4 | ul © High Voltage : Vepo = 1500V LT] alg “13 e@ Low Saturation Voltage : VCE (sat) = 5 V (Max.) 10 V8 } neo e Collector Metal (Fin) is Fully Covered with Mold Resin 23maxt fl al 3 oes s MAXIMUM RATINGS (Ta = 25°C) 5.45 5.45 CHARACTERISTIC SYMBOL UNIT 83 Z| Collector-Base Voltage Vepo_| 1500 [| V |] ‘3123 4 Collector-Emitter Voltage VCEO [ 600 | Vv | a Emitter-Base Voltage =a ERO 5 Vv Sly cottector Collector Current c | 8 A 3. EMITTER | Pulse | Icp | 6 | JEDEC = [Base Current | TA Collector Power Dissipation P 50 w [eZ = (Te = 25°C) c TOSHIBA 2-16E3A Weight : 55¢ (iyp) Storage Temperature Range =55~150 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [xay. | rye. [max. [unr] Collector Cut-off Current IcBo Vos = 1500 V, In = 0 [— [—] 1] ma] Enitier Cutoff Curent | Ippo [VE =6V, Io = 0 [= [= io [pa | Collector-Emitter Breakdown Eerste HS Remasicciomnn-0 [ow [= [| v | ; bre @)_|Vop = 5V, Ig = 1A ef |] D © Current Gain hee @) [Von =5V,Io=6A [3s | — [ao | Collector-Emitter Saturation os soins forenieizn [= [=| «[ Base-Emitter Saturation voi fereameion [ff a | Vop= OV, 1g =014 [=e Collector Output Capacitance Vop = 10V, Ip=0,f=1Miz | — | t0[ — | oF | Switching Storage Time Iop=4A,Ipj(end)=0.8A | — | 25[ 4 | Time Cig) [Fall Time fig = 64 kHz [= fos pos | “ Q61001EAAZ @ TOSHIBA jis continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or all due to their inherent electrical Sensivty and vulnerability to physical ses. i is the responsibilty of the buyer, when ulizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ ‘he information contained herein is presented only as a guide for the applications of our products. No responsibilty is assumed by, TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice 1999-09-02 1/4
Fig.1 SWITCHING TIME TEST CIRCUIT Ip I¢ asKsg (Note) 24H 4.7 uF o T% TUT. 3 ae: ‘ | 1002 50 was oi a INPUT as 8 S Ol a g spall fe * 7.8 us 1 Nn so os a4 * I i 0 x by = 145 pH 15.6 ps VDD 'y = 6200 pF Voc i i i i “90% IcP i i Base Current Gradient i dg /dt = —22*-B2 (4/8) i_tetg_i te Bldt= Ee # (Note) : Leakage Inductance of secondary winding LB is 1.2 ~H 1999-09-02 2/4
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| a Ze | | | 2 Fri ie EPP Ne ELE eee RT ee Z6 "Te = 25°C (INFINITE HEAT SINK) BH & PEEEEELEEELLENCEL 25 [treo area meal 8 OCC NN ES [mets sowterenmve reise 2 CO FS oor Ss 4 > PULSE WIDTH ty (s) CASE TEMPERATURE Te (°C) SAFE OPERATING AREA spe wax. Poise = TE TT fia N Ge ooo NTMINE NU Ss pe apgtion SN ee a, mini nme SNM| Nv g ae ss eee So eee SE Se 3 ys SSNS oe id A N,V S os PO TATA) 3 ll ANGE Ti 2 yt lll UT S01 NANT] 30m] CURVES MUST BE DERATED N " LINEARLY WITH INCREASE IN [TT NNT TEMPERATURE [voro wax] | 10m! COLLECTOR-EMITTER VOLTAGE Veg (V) 1999-09-02 4/4