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Technical content
Subject to change without notice. www.cree.com
FEATURES
- Thin 95-μm Chip
- Reduced Forward Voltage – 2.9 V Typical at 5 mA
- RazerThin LED Performance – 460 nm - 3.8–11.1 mW – 470 nm - 3.4–10.4 mW – 505 nm - 2.0–6.5 mW – 527 nm - 1.7–6.0 mW
- Single Wire Bond Structure
- Class-2 ESD Rating
APPLICATIONS
- Mobile Phone Key Pads – White LEDs – Blue LEDs – Green LEDs
- Cellular Phone LCD Backlighting
- Digital Camera Flash for Mobile Appliance
- Automotive Dashboard Lighting
- LED Video Displays
- Audio Product Display Lighting Cree® RazerThin® RT290TM LEDs CxxxRT290-S0100 Data Sheet Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward voltage. Cree’s RazerThin series chips have the ability to withstand 1000-V ESD. Applications for RazerThin LEDs include next-generation keypad backlighting where sub-miniaturization and thinner form factors are required. D ata Sheet: CPR3BU , Rev. E CxxxRT290-S0100 Chip Diagram Top View Bottom View G•SiC LED Chip 270 x 270 μm SiC Substrate h = 95 μm Backside Metallization Gold Bond Pad 110 μm Diameter Die Cross Section Cathode (-) Anode (+) Mesa (junction) 246 x 246 μm InGaN
Copyright © 2003-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc. CPR3BU Rev. E Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Maximum Ratings at TA = 25°C Notes 1&3 CxxxRT290-S0100 DC Forward Current 30 mA Peak Forward Current (1/10 duty cycle @ 1kHz) 100 mA LED Junction Temperature 125°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +100°C Electrostatic Discharge Threshold (HBM)Note 2 1000 V Electrostatic Discharge Classification (MIL-STD-883E)Note 2 Class 2 Typical Electrical/Optical Characteristics at TA = 25°C, If = 5mA Note 3 Part Number Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Min. Typ. Max. Max. C460RT290-S0100 2.7 2.9 3.1 1 C470RT290-S0100 2.7 2.9 3.1 1 C505RT290-S0100 2.6 2.9 3.2 1 C527RT290-S0100 2.6 2.9 3.2 1 Mechanical Specifications CxxxRT290-S0100 Description Dimension Tolerance P-N Junction Area (μm) 246 x 246 ± 25 Top Area (μm) 270 x 270 ± 25 Bottom Area (μm) 270 x 270 ± 25 Chip Thickness (μm) 95 ± 15 Au Bond Pad Diameter (μm) 110 ± 20 Au Bond Pad Thickness (μm) 1.2 ± 0.5 Back Contact Metal Width (μm) 20 ± 10 Notes: 1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD. 3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 5 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E. 4. For reference only, typical Vf for C460, C470, and C527 is 3.2 V and at 20 mA.
Copyright © 2003-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc. CPR3BU Rev. E Cree, Inc. Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Standard Bins for RT290 All LED chips are sorted onto die sheets according to the bins shown below. All radiant flux values shown and specified are at If = 20 mA (see Note 1) and all dominant wavelength values shown and specified are at If = 5 mA (see Note 2). C460RT290-S0100 C460RT290-0105 C460RT290-0106 C460RT290-0107 C460RT290-0108 C460RT290-0101 C460RT290-0102 C460RT290-0103 C460RT290-0104 455 nm 457.5 nm 460 nm 462.5 nm 465 nm 11.1 mW 7.2 mW 3.8 mW Dominant Wavelength Radiant Flux C470RT290-S0100 C470RT290-0105 C470RT290-0106 C470RT290-0107 C470RT290-0108 C470RT290-0101 C470RT290-0102 C470RT290-0103 C470RT290-0104 465 nm 467.5 nm 470 nm 472.5 nm 475 nm 10.4 mW 6.7 mW 3.4 mW Dominant Wavelength Radiant Flux C527RT290-S0100 C527RT290-0104 C527RT290-0105 C527RT290-0106 C527RT290-0101 C527RT290-0102 C527RT290-0103 520 nm 525 nm 530 nm 535 nm 6.0 mW 3.5 mW 1.7 mW Dominant Wavelength Radiant Flux Notes: 1. For reference only, radiant flux values at If = 5 mA are typically 29% and 32% of the corresponding radiant flux at If = 20 mA for 455-475 nm range and 520-535 nm range, respectively. 2. For reference only, wavelength values at If = 20 mA are typically 2 nm less and 7 nm less than the corresponding wavelength values at If = 5 mA for 455-475 nm range and 520-535 nm range, respectively. 3. Sorted die dits may contain any or all of the bins shown above, respectively. C505RT290-S0100 C505RT290-0103 C505RT290-0104 C505RT290-0101 C505RT290-0102 500 nm 505 nm 510 nm 6.5 mW 4.0 mW 2.0 mW Dominant Wavelength Radiant Flux
Copyright © 2003-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc. CPR3BU Rev. E Cree, Inc. Durham, NC 27703-8475 USA Tel: +1-919-313-5300 Fax: +1-919-313-5870 www.cree.com/chips Characteristic Curves These are representative measurements for the RazerThin products. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs Forward Voltage Volts If (mA) Wavelength Shift vs Forward Current -12.00 -10.00 -8.00 -6.00 -4.00 -2.00 0.00 2.00 4.00 6.00 8.00 10.00 0 5 10 15 20 25 30 If (mA) Shift (nm) 527nm 470nm Relative Intensity vs Wavelength - All Products 20% 40% 60% 80% 100% Wavelength (nm) Relative Intensity (%) 500 470 nm 527 nm Relative Intensity vs Forward Current 100 120 140 0 5 10 15 20 25 30 If (mA) % Intensity