C4D20120A CREE | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
Features
- 1.2kV Schottky Rectifier
- Zero Reverse Recovery Current
- High-Frequency Operation
- Temperature-Independent Switching
- Extremely Fast Switching Benefits
- Replace Bipolar with Unipolar Rectifiers
- Essentially No Switching Losses
- Higher Efficiency
- Reduction of Heat Sink Requirements
- Parallel Devices Without Thermal Runaway
Applications
- Switch Mode Power Supplies
- Power Factor Correction
- Motor Drives Package TO-220-2 Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VR DC Peak Reverse Voltage 1200 V IF Continuous Forward Current 53.5 25.5 A TC=25˚C TC=135˚C TC=150˚C IFRM Repetitive Peak Forward Surge Current 91
61 A TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse IFSM Non-Repetitive Forward Surge Current 130
110 A TC=25˚C, tP=10 ms, Half Sine Pulse
TC=110˚C, tP=10 ms, Half Sine Pulse IF,Max Non-Repetitive Peak Forward Current 1150
950 A TC=25˚C, tP=10 ms, Pulse
TC=110˚C, tP=10 ms, Pulse Ptot Power Dissipation 242
104 W TC=25˚C
TC=110˚C TJ Operating Junction Range -55 to +175 ˚C Tstg Storage Temperature Range -55 to +135 ˚C TO-220 Mounting Torque 1 8.8 Nm lbf-in M3 Screw 6-32 Screw Part Number Package Marking C4D20120A TO-220-2 C4D20120 PIN 1 PIN 2 CASE VRRM = 1200 V IF (TC=135˚C) = 25.5 A Qc = 99 nC
C4D20120A Rev. C
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.2 1.8
3 V IF = 20 A TJ=25°C
IF = 20 A TJ=175°C IR Reverse Current 35 200 400 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C QC Total Capacitive Charge 99 nC VR = 800 V, IF = 20A di/dt = 200 A/μs TJ = 25°C C Total Capacitance 1500 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.62 °C/W Typical Performance Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
C4D20120A Rev. C A C E D G H B J L M N F P Q S T U V W X Y M i n M a x M i n M a x A . 3 9 5 . 4 1 0 1 0 . 0 3 3 1 0 . 4 1 4 B . 2 3 5 . 2 5 5 5 . 9 6 9 6 . 4 7 7 C . 1 0 2 . 1 1 2 2 . 5 9 1 2 . 8 4 5 D . 3 3 7 . 3 3 7 8 . 5 6 0 8 . 5 6 0 E . 5 9 0 . 6 1 0 1 4 . 9 8 6 1 5 . 4 9 4 F . 1 4 9 . 1 5 3 3 . 7 8 5 3 . 8 8 6 G 1 . 1 2 7 1 . 1 4 7 2 8 . 6 2 6 2 9 . 1 3 4 H . 5 3 0 . 5 5 0 1 3 . 4 6 2 1 3 . 9 7 0 J L . 0 2 8 . 0 3 6 . 7 1 1 . 9 1 4 M . 0 4 5 . 0 5 5 1 . 1 4 3 1 . 3 9 7 N . 1 9 5 . 2 0 5 4 . 9 5 3 5 . 2 0 7 P . 1 7 0 . 1 8 0 4 . 3 1 8 4 . 5 7 2 Q . 0 4 8 . 0 5 4 1 . 2 1 9 1 . 3 7 1 S 3 ° 5 ° 3 ° 5 ° T 3 ° 5 ° 3 ° 5 ° U 3 ° 5 ° 3 ° 5 ° V . 1 0 0 . 1 1 0 2 . 5 4 2 . 7 9 4 W . 0 1 4 . 0 2 1 . 3 5 6 . 5 3 3 X 3 ° 5 ° 3 ° 5 ° Y . 3 9 5 . 4 1 0 1 0 . 0 3 3 1 0 . 4 1 4 Z . 1 3 0 . 1 5 0 3 . 3 0 2 3 . 8 1 0 I n c h e s M i l l i m e t e r sP O S R 0 . 0 1 0 R 0 . 2 5 4 1 2 Z Package Dimensions Package TO-220-2 POS Inches Millimeters Min Max Min Max A .381 .410 9.677 10.414 B .235 .255 5.969 6.477 C .100 .120 2.540 3.048 D .223 .337 5.664 8.560 E .590 .615 14.986 15.621 F .143 .153 3.632 3.886 G 1.105 1.147 28.067 29.134 H .500 .550 12.700 13.970 J R 0.197 R 0.197 L .025 .036 .635 .914 M .045 .055 1.143 1.397 N .195 .205 4.953 5.207 P .165 .185 4.191 4.699 Q .048 .054 1.219 1.372 S 3° 6° 3° 6° T 3° 6° 3° 6° U 3° 6° 3° 6° V .094 .110 2.388 2.794 W .014 .025 .356 .635 X 3° 5.5° 3° 5.5° Y .385 .410 9.779 10.414 z .130 .150 3.302 3.810 NOTE: 1. Dimension L, M, W apply for Solder Dip Finish PIN 1 PIN 2 CASE Recommended Solder Pad Layout Part Number Package Marking C4D20120A TO-220-2 C4D20120 TO-220-2 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering
C4D20120A Rev. C Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.
4600 Silicon Drive
Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power
- RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
- REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi- cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
- This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Notes Diode Model Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Diode Model CSD04060 Vf T = VT + If*RT VfT = VT+If*RT