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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

  • 1.2kV Schottky Rectifier
  • Optimized for PFC Boost Diode Application
  • Zero Reverse Recovery Current
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Positive Temperature Coefficient on VF Benefits
  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway

Applications

  • Solar Inverters
  • Power Factor Correction
  • LED Lighting Power Supplies
  • X-Ray Tube Power Drivers
  • EV Charging and Power Conversion Package TO-252-2 Part Number Package Marking C4D02120E TO-252-2 C4D02120 PIN 1 PIN 2 CASE Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VDC DC Blocking Voltage 1200 V IF Maximum DC Current 4.5 A TC=25˚C TC=135˚C TC=162˚C IFRM Repetitive Peak Forward Surge Current 14.4

10 A TC=25˚C, tP=10 ms, Half Sine pulse

TC=110˚C, tP=10 ms, Half Sine pulse IFSM Non-Repetitive Peak Forward Surge Current 19

16.5 A TC=25˚C, tP=10 ms, Half Sine pulse

TC=110˚C, tP=10 ms, Half Sine pulse IF,Max Non-Repetitive Peak Forward Current 200

160 A TC=25˚C, tP=10 ms, Pulse

TC=110˚C, tP=10 ms, Pulse Ptot Power Dissipation 51.7

22.4 W TC=25˚C

TC=110˚C TJ Operating Junction Range -55 to +175 ˚C Tstg Storage Temperature Range -55 to +135 ˚C VRRM = 1200 V IF (TC=135˚C) = 4.5 A Qc = 11 nC

C4D02120E Rev. G

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.4 1.9 1.8

3 V IF = 2 A TJ=25°C

IF = 2 A TJ=175°C IR Reverse Current 10 150 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C QC Total Capacitive Charge 11 nC VR = 800 V, IF = 2A di/dt = 200 A/μs TJ = 25°C C Total Capacitance 167 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz EC Capacitance Stored Energy 3.2 μJ VR = 800 V Fig. 7 Note: 1. This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit RθJC TO-252 Package Thermal Resistance from Junction to Case 2.9 °C/W Typical Performance Figure 1. Forward Characteristics Figure 2. Reverse Characteristics

C4D02120E Rev. G Recommended Solder Pad Layout Part Number Package Marking C4D02120E TO-252-2 C4D02120 TO-252-2 Package Dimensions Package TO-252-2 Note: Recommended soldering profiles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering θ

C4D02120E Rev. G Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi- cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Notes
  • Cree SiC Schottky diode portfolio: http://www.cree.com/diodes
  • C3D Spice models: http://response.cree.com/Request_Diode_model
  • SiC MOSFET and diode reference designs: http://response.cree.com/SiC_RefDesigns Related Links Diode Model Note: TJ = Diode Junction Temperature in Degrees Celsius, valid from 25°C to 175°C VT RT Diode Model CSD04060 Vf T = VT + If*RT VfT = VT+If*RT