C458 NJSEMI | Alldatasheet
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TiEU ^£,mL-C-.ona.uatoi , O ne.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 INVERTER THYRISTOR C458 53nm / 1400V / 2000Arrns / 35us Type C458 reverse blocking thyristor is suitable for inverter applications. The silicon junction is manufactured by the all-diffused process and utilizes the field-proven, interdigitated amplifying gate structure. It is supplied in an industry accepted disc-type package, ready to mount using commercially available heat dissipators and mechanical clamping hardware. ON-STATE CHARACTERISTICS MODEL V / V @ DRM ' Y RRM GMMM1 <A> THERMAL IMPEDANCE Oto+125°C -40°C C458PD C458PB C458P volts 1400 1200 1000 1300 1100 900 Gate Drive Requirements: 20 V / 20 ohms / O.Sus risetime 5 - 10 us minimum duration External Clamping Force 5000 - 6000 Ibs. 24.5 - 26.7 kN MECHANICAL OUTLINE 20° ±5° B 0 • = 2.96 in (75.2 iraj = 1.90 in (48.3 ion) 1.0T7 in (27.2 ran)
[lziiE.ii ^£mL~(Lona.uctoi tJ^toaucti, tine. Cs J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 PARAMETER LIMITING CHARACTERISTICS LIMIT UNITS Repetitive peak off- VDRM^RR state & reverse voltage Off-state & re verse IDRM/IRRM current Peak half cycle ITSM non-repetitive surge current Forfusing I2t On-state voltage V^ Critical rate of rise of on-state current Critical rate of rise of off-state voltage Reverse recovery charge di/dt dv/dt QRR Circuit commutated tQ turn-off time TEST CONDITIONS T, = -40 to+125"C T = 125"C 60Hz (8,3ms) 50Hz(10ms) 8.3ms IT = 4000A tp = 8.3ms T = 25°C up to volts 1400V 65 ma 16 kA 14.6 1.06 2.6 400 60Hz Tj=125"C T. = 125"C .T^ 125°C VR>-50V @ 100 A/us 200V/US to 80% VD Vr= -50 V MA2s volts A/us 500 v/us 400 uC 35 us C458 MUK mm won* i,»> Quality Semi-Conductors