C450DA1000-S48500-2-G

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Technical content

Subject to change without notice. www.cree.com

FEATURES

• Direct Attach LED Technology
• Rectangular LED RF Performance – 445-475 nm – 485+ mW – 527 nm – 200+ mW
• High Reliability - Eutectic Attach
• Low Forward Voltage (Vf) – 3.15 V Typical at 350 mA
• Maximum DC Forward Current – 1000 mA
• Junction-Down for Improved Thermal Management
• No Wire Bonds Required

APPLICATIONS

• General Illumination − Aircraft − Decorative Lighting − Task Lighting − Outdoor Illumination
• White LEDs
• Camera Flash
• Projection Displays
• Automotive Cree® Direct Attach™ DA1000™ LEDs CxxxDA1000-Sxxx00-2-G Data Sheet Cree’s DA™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for the general-illumination market. The DA LEDs are among the brightest in the lighting market while delivering a low forward voltage, resulting in a very bright and highly efficient solution. The bondpad-down configuration is designed for a flux eutectic die-attach process, eliminating the need for wire bonds, and enables superior performance from improved thermal management. CxxxDA1000-Sxxx00-2-G Chip Diagram D ata Sheet: CPR3ES Rev C 1000 x 1000 µm Top View Thickness, 335 µm Side View Bottom View Gap 70 µm Anode (+), 915 x 75 µm Cathode (-), 890 x 795 µm

© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and the Cree logo are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. CPR3ES Rev C Cree, Inc.

4600 Silicon Drive

Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Maximum Ratings at TA = 25°C Notes 1,2 & 3 CxxxDA1000-Sxxx00-2-G DC Forward Current 1000 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 1500 mA LED Junction Temperature 150°C Reverse Voltage 5 V Operating Temperature Range -40°C to +100°C LED Chip Storage Temperature -40°C to +120°C Recommended Die Sheet Storage Conditions ≤30°C / ≤85% RH Typical Electrical/Optical Characteristics at TA = 25°C, If = 350 mA Note 2 Part Number Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) C450DA1000-Sxxx00-2-G 2.9 3.15 3.4 2 20 C460DA1000-Sxxx00-2-G 2.9 3.15 3.4 2 21 C470DA1000-Sxxx00-2-G 2.9 3.15 3.4 2 22 C527DA1000-Sxxx00-2-G 3.0 3.3 3.6 2 35 Mechanical Specifications CxxxDA1000-Sxxx00-2-G Description Dimension Tolerance P-N Junction Area (μm) 960 x 960 ±35 Chip Bottom Area (μm) 1000 x 1000 ±35 Chip Top Area (μm) 630 x 630 ±45 Chip Thickness (μm) 335 ±25 Bond Pad Width – Anode (um) 75 ±15 Bond Pad Length – Anode (um) 915 ±35 Bond Pad Width – Cathode (um) 795 ±35 Bond Pad Length – Cathode (um) 890 ±35 Bond Pad Gap (μm) 70 ±15 Bond Pad Thickness (μm) 3 ±0.5 Notes: 1. Maximum ratings are package-dependent. The above ratings were determined using a Cree 3.45-mm x 3.45-mm SMT package (with silicone encapsulation and flux eutectic die attach) for characterization. Ratings for other packages may differ. Junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 350 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by manufacturer in large quantities and are provided for information only. All measurements were made using lamps in T-1¾ packages (with Hysol OS4000 epoxy encapsulant and flux eutectic die attach). Optical characteristics measured in an integrating sphere using Illuminance E. 3. The maximum forward current is determined by the thermal resistance between the LED junction and ambient. It is crucial for the end-product to be designed in a manner that minimizes the thermal resistance from the LED junction to ambient in order to optimize product performance. 200 400 600 800 1000 1200 25 50 75 100 125 150 175 Maximum Forward Current (mA) Ambient Temperature (C) Rth j-a = 10 C/W Rth j-a = 15 C/W Rth j-a = 20 C/W Rth j-a = 25 C/W

© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and the Cree logo are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. CPR3ES Rev C Cree, Inc. Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Standard Bins for CxxxDA1000-Sxxx00-2-G LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxDA1000-Sxxxxx-2-G) orders may be filled with any or all bins (CxxxDA1000-xxxx-2-G) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp. Dominant Wavelength (nm) C450DA1000-S48500-2-G C450DA1000-0325-2-G C450DA1000-0326-2-G C450DA1000-0327-2-G C450DA1000-0328-2-G C450DA1000-0321-2-G C450DA1000-0322-2-G C450DA1000-0323-2-G C450DA1000-0324-2-G C450DA1000-0317-2-G C450DA1000-0318-2-G C450DA1000-0319-2-G C450DA1000-0320-2-G C450DA1000-0313-2-G C450DA1000-0314-2-G C450DA1000-0315-2-G C450DA1000-0316-2-G C450DA1000-0309-2-G C450DA1000-0310-2-G C450DA1000-0311-2-G C450DA1000-0312-2-G 447.5 450 452.5445 455 625 585 550 515 485 Radiant Flux (mW) C460DA1000-S48500-2-G C460DA1000-0325-2-G C460DA1000-0326-2-G C460DA1000-0327-2-G C460DA1000-0328-2-G C460DA1000-0321-2-G C460DA1000-0322-2-G C460DA1000-0323-2-G C460DA1000-0324-2-G C460DA1000-0317-2-G C460DA1000-0318-2-G C460DA1000-0319-2-G C460DA1000-0320-2-G C460DA1000-0313-2-G C460DA1000-0314-2-G C460DA1000-0315-2-G C460DA1000-0316-2-G C460DA1000-0309-2-G C460DA1000-0310-2-G C460DA1000-0311-2-G C460DA1000-0312-2-G Dominant Wavelength (nm) 457.5 460 462.5455 465 625 585 550 515 485 Radiant Flux (mW)

© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and the Cree logo are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. CPR3ES Rev C Cree, Inc. Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Standard Bins for CxxxDA1000-Sxxxx00-2-G LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxDA1000-Sxxxxx-2-G) orders may be filled with any or all bins (CxxxDA1000-xxxx-2-G) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 350 mA. Note: The radiant-flux values above are representative of the die in a T-1¾ encapsulated 5-mm lamp. Dominant Wavelength (nm) C470DA1000-S48500-2-G C470DA1000-0321-2-G C470DA1000-0322-2-G C470DA1000-0323-2-G C470DA1000-0324-2-G C470DA1000-0317-2-G C470DA1000-0318-2-G C470DA1000-0319-2-G C470DA1000-0320-2-G C470DA1000-0313-2-G C470DA1000-0314-2-G C470DA1000-0315-2-G C470DA1000-0316-2-G C470DA1000-0309-2-G C470DA1000-0310-2-G C470DA1000-0311-2-G C470DA1000-0312-2-G 467.5 470 472.5465 475 585 550 515 485 Radiant Flux (mW) C527DA1000-S20000-2-G C527DA1000-0216-2-G C527DA1000-0217-2-G C527DA1000-0218-2-G C527DA1000-0213-2-G C527DA1000-0214-2-G C527DA1000-0215-2-G C527DA1000-0210-2-G C527DA1000-0211-2-G C527DA1000-0212-2-G C527DA1000-0207-2-G C527DA1000-0208-2-G C527DA1000-0209-2-G Dominant Wavelength (nm) 525 530 535520 275 250 225 200 Radiant Flux (mW)

© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and the Cree logo are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. CPR3ES Rev C Cree, Inc. Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Characteristic Curves These are representative measurements for the DA LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. 50% 100% 150% 200% 250% 300% 0 250 500 750 1000 1250 1500 Relative Light Intensity If (mA) Relative Intensity vs. Forward Current -12 0 250 500 750 1000 1250 1500 DW Shift (nm) If (mA) Wavelength Shift vs. Forward Current 250 500 750 1000 1250 1500 2 2.5 3 3.5 4 4.5 5 If (mA) Vf (V) Forward Current vs. Forward Voltage -0.400 -0.350 -0.300 -0.250 -0.200 -0.150 -0.100 -0.050 0.000 25 50 75 100 125 150 Voltage Shift (V) Junction Temperature (°C) Voltage Shift Vs Junction Temperature 25 50 75 100 125 150 DW Shift (nm) Junction Temperature (°C) Dominant Wavelength Shift Vs Junction Temperature 65% 70% 75% 80% 85% 90% 95% 100% 25 50 75 100 125 150 Relative Light Intensity Junction Temperature (°C) Relative Light Intensity Vs Junction Temperature

© 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree® and the Cree logo are registered trademarks, and Direct AttachTM, DATM and DA1000™ are trademarks of Cree, Inc. CPR3ES Rev C Cree, Inc. Durham, NC 27703-8475 USA Tel: +1.919.313.5300 Fax: +1.919.313.5870 www.cree.com/chips Radiation Pattern This is a representative radiation pattern for the DA LED product. Actual patterns will vary slightly for each chip.