2SC4460 SANYO | Alldatasheet
Document overview
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Technical content
Features
- High breakdown voltage, high reliability + Fast switching speed - Wide ASO - Adoption of MBIT process - Micaless package facilitating mounting Absolute Maximum Ratings at Ta= 25°C unit Collector-to-Base Voltage Voso 800 v Collector-to-Emitter Voltage Voro 500 v Emitter-to-Base Voltage Verso qT v Collector Current Io 15 A Peak Collector Current ip PWS 300zs,duty cycleS 10% 25 A Base Current Ip 4 A Collector Dissipation Po 3 OW Te= 25°C 55 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg —55to+150 °C Electrical Characteristics at Ta = 25°C. min typ max unit Collector Cutoff Current IcBo Vcop=500V,Ig=0 10 pA Emitter Cutoff Current lgBo Vep=5V,Io=0 10 pA DC Current Gain heel) Vog=5V,Ig=1.2A 15K 50% bpe(2) Vog=5V,Ic=6A 8 Gain-Bandwidth Product fp Vog=10V,Ig=1.2A 18 MHz Output Capacitance Cob Vop= 10V,f=1MHz 160 pF C-E Saturation Voltage Versat) I¢=6A,Ig=1.2A 1.0 v B-E Saturation Voltage VBEGat) Ic=6A,Ip=1.2A 1.5 v C-B Breakdown Voltage Visrycno I¢=1mA,[g=0 800 Vv C-E Breakdown Voltage Vipryceo Ic=5mA,Rgg= © 500 Vv E-B Breakdown Voltage Visryeso In=1mA,Icg=0 7 v C-E Sustain Voltage Veexisus) Ic=5A,Ipi = —Ipo=2A, 500 Vv L=500,H,clamped Continued on next page. % : For the hg of the 25C4460, specify two ranks or more in principle.
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Package Dimensions 2039A a0? 20.4 . 5.0 Z ut 9 35 (unit: mm) : Cy in olf Sst, 2 |_cfl het oc [a C: Collector wo B: Base pol Pe SANYO: TO3PML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg.,1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 7190MH, TA(KOTO) No.3331-1/3
28c4460 : aA Continued from preceding page. . min typ max unit Turn-ON time ton Voc=200V, 0.5 BS . Storage Time . totg fa = —2.5]pg=Ic=7A, 3.0 us Fall Time tr Ry = 28.62 0.3 us Switching Time Test Circuit PWs 181, bavoele sis me output " | 487 o ZR wo, ay 28.6 WBE=-5V Woo 2007 Unit (resistance: 9, capacitance: F)
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esCU Coo) oe« |] z 3 HU PN Peg A 4 S QoL PT eer got EP NN ee a | 3 Y,, 3 tH Hee Zn | [| [Ne | TT % [PP ae 2 LT Te Es Peet tt ee dae LU ee » 71 = 3 ee a ee -—— | 4 A # | | Cee ere te pf tT TN a oa _l | Pot | 7 NT] aay) 10 0 100 1000 oD a MC : ~‘Time,t — ms Ambient Temperature,Ta ~ °C No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD.,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTO, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No.3331-3/3