C4420

2SC4420 PANASONIC | Alldatasheet

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Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching n Features l High-speed switching l High collector to base voltage VCBO l Wide area of safe operation (ASO) l Satisfactory linearity of foward current transfer ratio hFE l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg Ratings 900 900 800 150 –55 to +150 Unit V V V V A A A W TC =25°C Ta=25°C n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO hFE1 hFE2 V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 900V, IE = 0 V EB = 7V , IC = 0 IC = 10mA, IB = 0 V CE = 5V , IC = 0.1A V CE = 5V , IC = 0.8A IC = 0.8A, IB = 0.16A IC = 0.8A, IB = 0.16A V CE = 5V , IC = 0.15A, f = 1MHz V CC = 250V min 800 typ max 1.5 1.5 0.7 2.5 0.3 Unit mA mA V V V MHz ms ms ms Unit: mm 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) 15.0–0.3 21.0–0.516.2–0.5 12.5 Solder Dip 3.5 0.715.0–0.2 5.0–0.2 11.0–0.2 10.9–0.5 5.45–0.3 321 1.1–0.1 2.0–0.2 0.6–0.2 2.0–0.1 f3.2–0.1 3.2

PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C C ob —V CB ton, tstg, tf — IC Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 (1) (3) (2) (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =3W) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 3.0 2.5 2.0 1.5 1.0 0.5 TC =25˚C 100mA 200mA 300mA 400mA 50mA IB=500mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=5 TC =100˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.1 100 0.3 IC /IB=5 TC =–25˚C 25˚C100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 1000 100 300 VCE =5V TC =100˚C –25˚C 25˚C Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 100 0.3 VCE =5V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 1 3 10 30 100 1000 100 300 IE=0 f=1MHz T C =25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0 1.6 0.4 1.2 0.8 0.01 0.03 0.1 0.3 100 tstg tf ton Pulsed tw =1ms Duty cycle=1% I C /IB=5 (2IB1=–IB2) VCC =250V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICM IC DC 10ms 1ms t=0.1ms Collector to emitter voltage VCE (V) Collector current IC (A)

Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 0.1 100 10000 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V · 0.2A (2W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink (1) (2) Time t (s) Thermal resistance Rth(t) (˚C/W) 0 1600400 1200800 1400200 1000600 Lcoil=200µH IC /IB=5 (IB1=–IB2) TC =25˚C Collector to emitter voltage VCE (V) Collector current IC (A) L coil ICIB1 Vin tW –IB2 Vclamp VCC T.U.T