C441 NJSEMI | Alldatasheet
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O' *_/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. C441 High Power Silicon Controlled Rectifier 1800 Volts 750A Avg. MAXIMUM ALLOWABLE RATINGS TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 TYPE C441 PC .C441PD. C441PE C441PM C441PS C441PN REPETITIVE PEAK OFF-STATE VOLTAGE, VORM' Tj « -40°C to +125°C 1 300 Volts 1400 1500 1600 1700 1800 REPETITIVE PEAK REVERSE VOLTAGE, VRRM' Tj " -40°C to +125°C
1300 Volts
VOLTAGE, VRSM" Tj " +125°C ,1470 Volts 1580 1700 1790 1920 2040 Hall' sincwave waveform, 10msec max. pulse width. Average On-State Current, IT(AV) Depends on Conduction Angle (See Charts 1'and 2) Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) 11,000 Amperes Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM (50 Hz) 10,000 Amperes Critical Rate-of-Rise of On-State Current (Non-Repetitive)t 15° Critical Rate-of-Rise of On-State Current (Repetitive)f 75 I7t (for fusing) (for times > 1.5 milliseconds) See Figure 7 280,000 (RMS Ampere)2 Seconds I2t (for fusing) (at 8.3 milliseconds) 500,000 (RMS Ampere)2tSeconds Peak Gate Power Dissipation, PGM 20° Watts ® 40 ^sec Pulse Average Gate Power Dissipation, PG(AV) ^ Watts Storage Temperature, Tstg -40°C to +150°C Operating Temperature, T, -40°c to +125°C Mounting Force Required 3000 Lbs. - 3500 Lbs. 13.3 Kn -15.6Kn T" LENGTH Of STRAIGHT LEAD SYM A C E F G H J K L M N P R S T U DEC INC MIN -240 no 245 186 .060 2200 .Oil ,03O .056 1,000 .030 .130 1 300 ,067 12200 137 IMAL MES' MAX 260 130 191 075 1 430 1.065 2500 .019 130 060 1.065 096 150 1 345
2 ISO
.083 12 360 153 MET M MIN 6096 2794 6223 4 724 1 524 5588 2794 r .762 1422 2540 .762 3302 3302 1.702 509. 9 3.48O RlC M MAX 6604 3302 4851 1905 3632 27051 63 50 3483 3302 1524 27.05 2 438 3810 34 16 5461 2.110 313 9 3 886 Quality Semi-Conductors
Off-State Voltage (Higher values may cause device switching) SYMBOL IRRM and 'DRM IRRM and IDRM R0JC dv/dt MIN, 200 TYP. MAX. 0.04 UNITS mA mA °C/Watt V/MSeC TEST CONDITIONS Tj = +25°C, V = VDRM = VRRM T, -+125°C, V- VDRM =VRRM Junction-to-Case (Double-Side Cooling) Tj = -H25°C, 0.8 x VDRM Applied, Using Linear Exponential Rising Waveform, Gate Open. ' VDRM Exponential dv/dt = 0.8 • (.632) Higher minimum dv/dt selection available - consult factory. DC Holding Current DC Latching Current Turn-On Delay Time Gate Pulse Width Necessary to Trigger DC Gate Trigger Current See Figure. 1 0 for Recommended ,Gate Drive Conditions DC Gate Trigger Voltage See Figure 10 Peak On-State Voltage Circuit Commutated Turn-Off Time IH IL td IGT VGT VTM V .15 500 .25 0.7 125 ISO 300 125 2.0 mAdc Adc Msec Msec mAdc Vdc Volts Msec Tc = +25°C, Anode Supply = 24 Vdc, Initial On-State Current = 2 Amps. Tc = •f25°C. Anode Voltage = 24 Vdc, Load Resistance 12 Ohms Max. Tc = +25CC, If = 50 Adc, Ga.te Supply: 20 Volts, 20 Ohms, 0.1 Msec maX. rise time Tc = +25°C. Gate Supply: 10 Volt Open Circuit, 5 Ohms, 0.1 Msec rise time Tc = +25°C,'VD = 6Vdc, RL = 3 Ohms Tc = -40°C, VD = 6 Vdc, RL = 3 Ohms Tc = +125°C, VD = 6 Vdc, RL = 3 Ohms Tc = -40°C to +125°C, VD = 6 Vdc, RL = 3 Ohms . Tc =+125°C, VD = Rated VDRM, RL = 1000 Ohms Tc - +25°C, IT » 3000 Amps. Peak. Duty Cycle < 0.01% (1) Tc =+125°C (2) ITM * 500 Amps (3) VR = 50 Volts Min. (4) 0.8 VDRM Reapplied (5) Rate-of-Rise of Reapplied Off-State Voltage = 20 V/Msec (linear). (6) Commutation di/dt = 25 Amps/Msec (7) Repetition Rate » 1 pps (8) Gate Bias During Turn-Off Interval *