2SC4212 PANASONIC | Alldatasheet
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2SC42122SC42122SC42122SC42122SC4212 Silicon NPN triple diffusion planar type For color TV horizontal deflection driver I Features
- High collector to emitter voltage VCEO
- TO-126B package which requires no insulation plate for installa- tion to the heat sink I Absolute Maximum Ratings TC = 25°C 1 : Emitter 2 : Collector 3 : Base Unit: mm I Electrical Characteristics TC = 25°C Parameter Symbol Rating Unit Collector to base voltage V CBO 350 V Collector to emitter voltage V CEO 300 V Emitter to base voltage V EBO 7.5 V Peak collector current I CP 400 mA Collector current I C 200 mA Collector power dissipation P C 1.2 *1 W 5 *2 Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CBO VCB = 200 V, IE = 0 2 µA Emitter cutoff current I EBO VEB = 5 V, IC = 0 2 µA Collector to base voltage V CBO IC = 100 µA, IE = 0 350 V Collector to emitter voltage V CEO IC = 5 mA, IB = 0 300 V Emitter to base voltage V EBO IE = 100 µA, IC = 0 7.5 V Forward current transfer ratio h FE VCE = 10 V, IC = 10 mA 40 250 Collector to emitter saturation voltage VCE(sat) IC = 50 mA, IB = 5 mA 1 V Transition frequency f T VCB = 30 V, IE = −10 mA, f = 200 MHz 50 MHz Collector output capacitance C ob VCB = 50 V, IE = 0, f = 1 MHz 4.5 pF Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink 8.0+0.5 –0.1 1.9±0.1 3.05±0.1 3.8±0.3 11.0±0.516.0±1.0 3.2±0.2 0.75±0.1 0.5±0.1 2.3±0.2 4.6±0.2 0.5±0.1 1.76±0.1 123 φ 3.16±0.1
VCE(sat) IC hFE IC fT IE PC Ta IC VCE IC VBE Cob VCB Area of safe operation (ASO) 0 200 40 80 160 120 18020 60 140 100 (1)With a 100×100×2mm Al heat sink (2)Without heat sink (1) (2) Ambient temperature Ta (˚C) Collector power dissipation PC (W) 02 0 48 1 6 12 120 200 160 TC=25˚C 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA IB=2.0mA Collector to emitter voltage VCE (V) Collector current IC (mA) 240 200 160 120 VCE=10V TC=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA) 13 10 30 100 0.01 0.1 0.03 0.3 IC/IB=10 –25˚C 25˚C TC=100˚C Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) 1 10 10033 0 1000 100 300 VCE=10V TC=100˚C –25˚C 25˚C Collector current IC (mA) Forward current transfer ratio hFE 120 200 160 VCB=30V f=200MHz T C=25˚C Emitter current IE (A) Transition frequency fT (MHz) 1 3 10 30 100 IE=0 f=1MHz T C=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.001 0.003 0.01 0.03 0.1 0.3 10 30 100 300 1000 Single pulse TC=25˚C t=10ms t=1s DC ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)
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