2SC4160 SANYO | Alldatasheet
Document overview
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Technical content
Features
- High breakdown voltage, high reliability - Fast. switching speed (tp=0. tps typ) « Wide ASO . Adoption of MBIT process + Micaless package facilitating mounting Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Vopo 500 v Collector-to-Emitter Voltage Vero 400 Vv Emitter-to-Base Voltage Vepo T Vv Collector Current Ig 4 A Peak Collector Current lop PW$300ps, duty cycle¢ 10% 8 A Base Current Ip 1.5 A Collector Dissipation Po 2 W Te=25°C 25 OW Junction Temperature Tj 150 % Storage Temperature Tstg -55 to +150 % Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current: Iczo Vop=400V,Ip=0 10 pA Emitter Cutoff Current Tepo VppeoV, 120 10 pA DC Current Gain heey Vog=5V,Ig=0.4A 158 50" bpp. Vog=5V,1g=2a 10 hep Voge5V,Ic=10mA 10 Gain-Bandwidth Product fy Vogt 10V,1¢=0.4A 20 MHz Output Capacitance Con Vop=10V, f= 1MHz 50 pF C-E Saturation Voltage Vor (sat) Ig=2A,1p=0.4A 0.8 v B-E Saturation Voltage Vpg(sat) Ic¢=2A,Tp=0.4A 1.5 v C-B Breakdown Voltage Veprycpo Ic=tmA,1p=0 500 v C-E Breakdown Voltage Vopr)ceo I¢=5mA,Rpp=co 400 Vv E-B Breakdown Voltage V(BR)EBO Tp=1mA,1¢=0 7 Vv Continued on next page. Switching Time Test Circuit PU=2Dps-duty fectors1% output Package Dimensions 2041 input {Bt (unit: mm) 2 Re Jie : a as “ar ta] 2b Vage-5V Voc 2009 i Pp Fatedt O08 . s Unit (Resistance : 2, Capacitance : F) 7.2 a E: Emitter " C: Collecter * 7 0.7 B: Base a SANYO: TO220ML SANYO Electric Co.,Ltd. Semiconductor Business Headquarters . TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 3267TA,TS No.2481-1/3
Continued from preceding page. min typ ‘max omit - C-E Sustain Voltage Vorx(sus) for2heTp y= 0-24, 4 400 Turn-on Time ton 51266. 68hns,Yoc= Sov 25 ps Storage Time tstg : , 03 he Fall Time te " ifying the bppy : 2SC4160 is classified as follows. When spec " penic FElectey tus ranks or more in principle.
15 L 30 20 M 40 | 30 N 50] a
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I Forward Bias AS 0 i “oper iomard Bias ASO eres Bie ASO . ee = : o, PERGEENPRSE DSS fae S6 Sh onan TENS NCR SER PA = 10 0p od iS rt i— x ee LTS YU shee NA
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a LISW NEO a a | RA BCC ee +H 3 8] KENT é, tilt IN eo UT Te NNT Pee Fae \\ a a ee | 3 soy’ SS & Fe tH A PSSST eg HH Ao a as iN 3 [TTT [| li Tenpst Small 8 atit}}——| aa voopsigste suiee TTT CR 100 1000 Collector -to-Emitter Voltage,Vog - V Collector-to-Emitter Sustain Voltage, PC - Ta Voex(sus) ~ ¥ ' 25} of g 2 Ss IN ba ‘% i 5, a ed a De § ! ‘Lo, 3 i | Sq | 3 5 1 ; NS a No ‘heat 34, NI Qo 2 nie © oh OI tC) 2 py 60 6 1 120 140 160 Ambient Temperature,Ta - °C WM No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: : ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Hi Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production..SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. eee No. 2481-3/3