2SC4125 SANYO | Alldatasheet
Document overview
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Technical content
Features
- Adoption of MBIT process + On-chip damper diode . - High breakdown voltage (Vcopo =1500V) - High speed (tp=100ns typ.) - High reliability (Adoption of HVP process) Absolute Maximum Ratings at Ta= 25°C unit Collector-toBase Voltage Voso 1500 v Collector-to-Emitter Voltage VocEro 800 Vv Emitterto.Base Voltage Vespo 6 Vv Collector Current, Ic 10 A Peak Collector Current icp 25 A Collector Dissipation Po 3 WwW Te=25°C 70 WwW Junction Temperature Tj 150 °C Storage Temperature Tstg -55to+150 °C : Electrical Characteristics at Ta= 25°C min typ max unit Collector Cutoff Current Icgo Vop=800V Ig=0 10) pA Collector Cutoff Current Ices Vor=1500V,Rpr=0 1 mA Collector Sustain Voltage Verous) I¢=100mA,lg=0 800 Vv Emitter Cutoff Current Igpo Vep=4V,Ic=0 40 130 mA C-E Saturation Voltage Venwat) Ic=8AJp=2A 5 v B-E Saturation Voltage Vexsat) Ic=8A,p=2A 1.5 v DC Current Gain hpg(1) Vog=5V,Ic=1A 8 bpp (2) Ver=5V,Ic=8A 4 6 Diode Forward Voltage Vp Igc=10A 2 Vv Storage Time tetg [‘oro\\ias =1.2A 3 ops Fall Time te Ipo=—2.4A 0.1 0.2 BS Switching Time Test Circuit Package Dimensions 2039 (unit: mm ) PW=20p1s 220 20.4 DCS 1% so pets uk 10 -_| © OUTPUT a | nafs AP eee . weut Tye l- Ly Ba L a Ries | aff ii Bs By neta E: Emitter a C: Collector Vee=—5V Veo =200V ol B: Base . * cat}: SANYO: TO3PML Unit (resistance:®, capacitance:F) : SANYO Electric Co.,Ltd. Semiconductor Business Headquarters 1 . TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 9149MO,TS No.2954-1/3
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oof ey asa }T Piri yy Collector-to-Emitter Voltage,Vog ~ V ‘ Collector-to-Emitter Voltage, Vox -v : ______Srallectorto-Bmitter VoltageVos~V —*_———CallectortolBmitterVoltage.Vor— Vo No.2954-2/3
Po — Ta Pc — Ta wT TTT TET) JE Tr = 20 = = 7 PT NC] ONC C ECTS op 2s) - ; & ps ! NT = go & s 50 % a e, a 4, & en | z 40} <2 Bas! “oy, | g @ Fo iN] gs i ° : i. HS tp ptt SN Ts Oo a Ambient Temperature,Ta — °C Ambient Temperature,Ta ~ °C MI No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property ios. M Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors: or any of their officers and employees jointly or severally. W Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. wees No.2954-3/3