2SC4107 SANYO | Alldatasheet

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+ High breakdown voltage and high reliability . Fast switching speed « Wide ASO + Adoption of MBIT process Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Vepo 500 v Collector-to-Emitter Voltage Yoro 400 v Emitter-to-Base Voltage Vepo T v Collector Current Ic 10 A Peak Collector Current lop PW£300ps ,duty cycle¢10% 20 A Base Current Ip 3.5 A Collector Dissipation Po 1.75 W : Te=25°C 60 WwW Junction Temperature Tj 150 °c Storage Temperature Tstg -55 to +150 °c Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Toxo Vopz4O0V,1p=0 10 pA Emitter Cutoff Current Ippo Vene5V,I¢=0 10 pA DC Current Gain hpe(4) Vog=5V,Ig=1.2A 158 50* Npp(2) Vog=5V,Ic=6A 10 tipe(3) Voge 5V,Tc=10ma 10 C-E Saturation Voltage Vog(sat) Ig=6A,Ige1.2A 0.8 Vv B-E Saturation Voltage VeE(sat) Ig=6A,1g=1.2A 1.5 Vv Gain-Bandwidth Product fp Vog=10V,Ipg=1.28 20 MHz Output Capacitance Copy Vop= 10V, f= 1MHz 120 pF . Continued on next page. *: The hpg, of the 2S8C4107 is classified as follows. When specifying the bpp, Fark, specify two ranks or more in principle. [i5"L 30 [| 20 Mm 40 [30 N 50 Package Dimensions 2010A (unit: mm) aoe . te 13 10859 w ~~ E: Emitter Let toe C: Collecter Ey > ~&Br Base wl JEDEC: TO~220aB EIAJ: SC-46 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters . TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN S257TA,TS Wo. 2N72-1/3 *

Continued from preceding page. . - min: typ max unit C-B Breakdown Voltage Vv Ip=1mA,I,=0 500 Vv ' C-E Breakdown Voltage vier oeo TgsSmA, Rep=co 400 Vv . EB Breakdown Voltage Vpr)epo Ip=tmA,Ig=0 7 v ~E Sustain Voltage VoEx(sus) Igs4.5A,1p,=0.45A, 400 Vv Tppen1-8As1=500pH, elampe Turn-on Time t Ip=T7A,Ip,=1-4A 0.5 is on Tpp=~2. BA, R, =28. 6ohns, Voc=200V Storage Time t To=TA, Ip 4e1.4A 2.5 Ss sts Tpot~2-BA,R, =28,6ohns, Voc=200V Fall Time te Ige7A,1. 14a, 0.3 ps Tpo~2-8A,R; 28, 6ohns, Voc=200V Switching Time Test Circuit Duty Cybte 1% ons" INPUT 81, Rp Ie . 50 100p, 4704 a — Vpe=—5V Voc = 2009 Unit (Resistance : 2, Capacitance : F) 0 ls ee —- ta Ic _- VBE(on) a pees eT TT | ve Za ek] Eee, | aS eee q 1 eae eee’ aa] oF, jf. | tee ‘ — fe aaa to == ft | Uy sseeeeE =e eee % I | 6 pio % az O04 <r 08 10 1. 14 Collector-to-Emitter Voltage, Vop - V Base -to-Emitter. ON-State. Voltage, Vgp(oq) ~ V hee - Ic - VcE(sat) - I @ 3 Hote | £ fret ss g ETL st TPN i) os® Dee 8 a “S ee] UT TTT TT yA eet TNT ae a LY aT ST ES al pep ez é a £ Sy he} [Ts tt ee 8 et tf pre eet CO ee

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Collector Current ,Ig ~ A . Collector Current,I, - A; . Cc c - No.2472-2/3

25¢4107 aE = 10 VBe(sat) - Ic 0 SW Time - Ic , pecseet LETTE TTT 2 Py}

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83 ; oS i, Hee eee NS ike —| ire Sscrot ts Seclig$ SEe oe g gl Vecz200v enim perme TT TTT Tg, =~ a3 Tc=51e1=-2.51 82 rl. frp _ as Es 2 ec pit a ty 10 K Collector Current ,Ig - A Collector Current,Ig - A” Forward Bias A S.0 Reverse Bias AS 0 iff Tt eat a | < fee EE atl < Ge eX _TPX XS inn a a 2 4 an ALA ee oe a Bol PENN INTUTE § gp SN SINAN oo § ttf SRN ep 3 SJ] 3 4! 3 4 mo EN NT | a ee dott TP TTY ST) g tactee a 8] Te-ase{ | | | SH © dte2=-1.8 const. | | | a! puiee a oO £5 100144 If yd Collector-to-Emitter Voltage, Vog -V Collector-to-Emitter Sustain Voltage, Y -v Pc - CEX(. » C- Ta sus) ; yaa : Tf ty g 59 Ney! q Ne! | | i | ae No. 3 Q A 2 : LIN 8 aol N Poot PN a 7 NI O20" 0 0CKSC‘( GO Ambient Temperature,Ta - °C . WNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/orime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @ Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, ‘Subsidiaries and distributors or any of their officers and employees jointly or severally, M information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees: are made or implied regarding its use or any infringements of intellectual property rights or other rights of . third parties, . ee No. 2472-3/3