2SC4106 SANYO | Alldatasheet
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« High breakdown voltage and high reliability . Fast switching speed . « Wide ASO . Adoption of MBIT Process Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Voso 500 v Collector-to-Emitter Voltage Vero 400 Vv Emitter -to-Base Voltage Vso 7 v Collector Current Ig 7 A Peak Collector Current dop PW¢300ps duty cycles 10% 14 A Base Current Ip 3 A Collector Dissipation Pc 1.75 Ww Tes25°C 50 OW Junction Temperature Tj 150 °C Storage Temperature Tstg -55 to +150 °C Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Topo Vopz400V,1,=0 10 pA Emitter Cutoff Current Trpo Vpp25V,Ip=0 10 pA DC Current Gain hpp(1) Vog=5V,I¢=0.8A 15® 50* hpp(2) Vogs5V,Ic=4A 10 hpe(3) Voge SV, Ic=10ma 10 C-E Saturation Voltage Vor (sat) Ig=4A,1p=0.8A 0.8 Vv B-E Saturation Voltage VBE(sat) Ig=4a,Ip=0.8A 1.5° v Gain-Bandwidth Product fy Vege 10V,1p=0.8A 20 Maz Output Capacitance lop Vop= 10V, f= 1MHz 80 pF Continued on next page. #: The hpg, of the 2S8C4106 is classified as follows. When specifying the / Bppy Fak, specify two ranks or more in principle. 15 L 30 20 M 40 30. N 50 Package Dimensions 2010A (unit: mm) —» 27. enor | ie : pee BG a) Festaeers Lo Rea 13 ws 1 E: Emitter ‘Yel ar C: Collecter ES B: Base vl JEDEC: T0-220AB : EIAJ: SC-46 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN ' _— 5257TA,TS No.247 1-1/3!
Continued from preceding page. min typ max unit C-B Breakdown Voltage v Io=1mA I,=0 500 Vv C-E Breakdown Voltage veon ceo Tge5mA, Rego 400 v E-B Breakdown Voltage V(BR)EBO Ie 1mA,Ip=0 7 Vv C-E Sustain Voltage VoEx (sus) po=3hs Tyr 0-38, 400 Vv Ipo=-1.24,L=1mH, clamped Turn-on Time ton eee wane 0.5 ps Ipg=-24,R,=40ohms, veg=2007 25 St Tim t, Ig=5A,Ipj=14 5 ps orage ie stg Tyoe-2k A, =40ohms ; ; Voc=200V Fall Time te TcS5A,Tp=1A, 0.3 ps Igo=-2A,R,=40ohms, Voc=200V Switching Time Test Circuit Duty Cytie $ 1% " InPuT Je, a; 5° 100y “i Vpes~5V Voc ™ 200V Unit (Resistance : 2, Capacitance : F) : Ic - Vee 8 Ic - Yee : Ca = e/a A Zee ee Pn = ee oe Zo Gee Se en es jt 1 eee [7 iA Ee Meo 8 3, y Collector-to-Emitter Voltage, Vog - V Base-to-Emitter ON-State Voltage, Vge(on) - V "Tt ° Sooo TR) Ee eo LT TT g Cee See ee = pe tt ye eee PENSE fC ey oe a NS 8 Y
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Ambient Temperature,Ta - °C IM No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directiy or indirectly cause injury, death or property loss. M Anyone purchasing any products described or contained herein for an above-mentioned use shall © Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or ‘ litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Mi Information (including cirouit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. . No. 247 1-3/3