C3M0075120D CREE | Alldatasheet

Document overview

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Technical content

Features

  • C3MTM SiC MOSFET technology
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant Benefits
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies Package Part Number Package Marking C3M0075120D TO-247-3 C3M0075120 VDS 1200 V I D @ 25˚C 30 A RDS(on) 75 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 ID Continuous Drain Current A VGS = 15 V, TC = 25˚C Fig. 19

19.7 VGS = 15 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 80 A Pulse width tP limited by Tjmax Fig. 22 PD Power Dissipation 113.6 W TC=25˚C, TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Md Mounting Torque 1 8.8 Nm lbf-in M3 or 6-32 screw Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V

C3M0075120D Rev. A, 02-2019 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.7 2.5 4.0 V VDS = VGS, ID = 5 mA Fig. 11

2.0 V VDS = VGS, ID = 5 mA, TJ = 150ºC

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 75 90 mΩ VGS = 15 V, ID = 20 A Fig. 4, 5, 6105 VGS = 15 V, ID = 20A, TJ = 150ºC gfs Transconductance 9.0 S VDS= 20 V, IDS= 20 A Fig. 7

8.3 VDS= 20 V, IDS= 20 A, TJ = 150ºC

Ciss Input Capacitance 1350 pF VGS = 0 V, VDS = 1000 V f = 1 MHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 58 Crss Reverse Transfer Capacitance 3 Eoss Coss Stored Energy 35 μJ Fig. 16 EON Turn-On Switching Energy (SiC Diode FWD) 564 μJ VDS = 800 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 0Ω, L= 157 μH, TJ = 150ºC Fig. 26, 29EOFF Turn Off Switching Energy (SiC Diode FWD) 186 EON Turn-On Switching Energy (Body Diode FWD) 924 μJ VDS = 800 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 0Ω, L= 157 μH, TJ = 150ºC Fig. 26, 29EOFF Turn Off Switching Energy (Body Diode FWD) 162 td(on) Turn-On Delay Time 56 ns VDD = 800 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 0 Ω, Timing relative to VDS Inductive load Fig. 27, tr Rise Time 17 td(off) Turn-Off Delay Time 32 tf Fall Time 13 RG(int) Internal Gate Resistance 10.5 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 17 nC VDS = 800 V, VGS = -4 V/15 V ID = 20 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 20 Qg Total Gate Charge 54 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.1 V VGS = -4 V, ISD = 10 A Fig. 8, 9, 103.75 V VGS = -4 V, ISD = 10 A, TJ = 150 °C IS Continuous Diode Forward Current 25.3 A VGS = -4 V, TJ = 25 ˚C Note 1 IS, pulse Diode pulse Current 80 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 trr Reverse Recover time 48 ns VGS = -4 V, ISD = 20 A, VR = 800 V dif/dt = 2800 A/µs, TJ = 150 °C Note 1Qrr Reverse Recovery Charge 279 nC Irrm Peak Reverse Recovery Current 9 A Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.97 1.1 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40

Figure 29. Clamped Inductive Switching Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.

C3M0075120D Rev. A, 02-2019 Package Dimensions Package TO-247-3 Recommended Solder Pad Layout TO-247-3 POS Inches Millimeters Min Max Min Max A .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC N 3 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9˚ 11˚ 9˚ 11˚ U 9˚ 11˚ 9˚ 11˚ V 2˚ 8˚ 2˚ 8˚ W 2˚ 8˚ 2˚ 8˚ Pinout Information:

  • Pin 1 = Gate
  • Pin 2, 4 = Drain
  • Pin 3 = Source T U WV

C3M0075120D Rev. A, 02-2019 Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • SPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support