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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

Features

  • New C3MTM SiC MOSFET technology
  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low on-resistance
  • High-speed switching with low capacitances
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Halogen free, RoHS compliant Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • Renewable energy
  • EV battery chargers
  • High voltage DC/DC converters
  • Switch Mode Power Supplies Package Part Number Package Marking C3M0065100K TO 247-4 C3M0065100K VDS 1000 V I D @ 25˚C 35 A RDS(on) 65 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1000 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage (dynamic) -8/+19 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (static) -4/+15 V Static Note: 2 ID Continuous Drain Current A VGS = 15 V, TC = 25˚C Fig. 19

22.5 VGS = 15 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 90 A Pulse width tP limited by Tjmax Fig. 22 EAS Avalanche energy, Single pulse 110 mJ ID = 22A, VDD = 50V PD Power Dissipation 113.5 W TC=25˚C, TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V D TAB Drain 2 3 4 S S G Drain (Pin 1, TAB) Power Source (Pin 2) Driver Source (Pin 3) Gate (Pin 4)

C3M0065100K Rev. -, 09-2016 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1000 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.8 2.1 3.5 V VDS = VGS, ID = 5 mA Fig. 11

1.6 V VDS = VGS, ID = 5 mA, TJ = 150ºC

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1000 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 65 78 mΩ VGS = 15 V, ID = 20 A Fig. 4, 5, 690 VGS = 15 V, ID = 20A, TJ = 150ºC gfs Transconductance 14.3 S VDS= 20 V, IDS= 20 A Fig. 7

11.9 VDS= 20 V, IDS= 20 A, TJ = 150ºC

Ciss Input Capacitance 660 pF VGS = 0 V, VDS = 600 V f = 1 MHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 60 Crss Reverse Transfer Capacitance 4.0 Eoss Coss Stored Energy 16 μJ Fig. 16 EON Turn-On Switching Energy (Body Diode FWD) 190 μJ VDS = 700 V, VGS = -4 V/15 V, ID = 20A, RG(ext) = 2.5Ω, L= 130 μH, TJ = 150ºC Fig. 26 EOFF Turn Off Switching Energy (Body Diode FWD) 40 td(on) Turn-On Delay Time 20 ns VDD = 700 V, VGS = -4 V/15 V ID = 20 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27 tr Rise Time 10 td(off) Turn-Off Delay Time 19 tf Fall Time 8 RG(int) Internal Gate Resistance 4.7 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 9 nC VDS = 700 V, VGS = -4 V/15 V ID = 20 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 16 Qg Total Gate Charge 35 Reverse Diode Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.8 V VGS = -4 V, ISD = 10 A Fig. 8, 9, 104.4 V VGS = -4 V, ISD = 10 A, TJ = 150 °C IS Continuous Diode Forward Current 22 A VGS = -4 V Note 1 IS, pulse Diode pulse Current 90 A VGS = -4 V, pulse width tP limited by Tjmax Note 1 trr Reverse Recover time 14 ns VGS = -4 V, ISD = 20 A, VR = 700 V dif/dt = 4500 A/µs, TJ = 150 °C Note 1Qrr Reverse Recovery Charge 310 nC Irrm Peak Reverse Recovery Current 34 A Thermal Characteristics Symbol Parameter Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 1.1 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40

Figure 30. Clamped Inductive Switching Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.

C3M0065100K Rev. -, 09-2016 Package Dimensions Package TO-247-4L BASE METAL SECTION "F-F", "G-G" AND "H-H" SCALE: NONE E E3 E4

C3M0065100K Rev. -, 09-2016 NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. MIN MILLIMETERS SYM MAX A b c D E 4.83 5.21 2.29 2.54 1.91 2.16 1.07 1.28 1.07 1.33 1.07 1.60 1.07 1.50 0.55 0.65 0.55 0.68 23.30 23.60 16.25 17.65 0.95 1.25 15.75 16.13 2.39 2.39 2.94 2.84 2.39 2.39 2.69 2.64 Recommended Solder Pad Layout MIN MILLIMETERS SYM MAX e N L øP Q S T W X 13.10 14.15 3.68 5.10 1.00 1.90 12.38 13.43

2.54 BSC

17.31 17.82 3.97 4.37 3.51 3.65 5.49 6.00 6.04 6.30 17.5° REF. 3.5 ° REF. 4° REF. e1 5.08 BSC L2 2.35 2.65 Package Dimensions Package TO-247-4L

C3M0065100K Rev -, 09-2016 Copyright © 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • SPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support