C397 NJSEMI | Alldatasheet
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20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (201) 376-2922 (212) 227-6005 TELEX: 13-8720 HIGH SPEED Silicon Controlled Rectifier
1200 Volts, 650 A RMS
VOLTAGE, VDRM' Tj - -40°C to +125'C
500 Volts
VOLTAGE, VRRM> Tj - -40°C to -M25°C REVERSE VOLTAGE, VRSM ' Tj - 125°C
600 Volts
' Half sine wave waveform, 10 IDS max. pulse width. Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM 7500 Amperes I2t (for fusing) for times > 1.5 milliseconds 95,000 (RMS Ampere)2 Seconds I2t (for fusing) for limes > 8.3 milliseconds 230,000 (RMS Ampere)2 Seconds Critical Rntc-of-Rise of On-State Current, Non-Repetitive 800 A/^s t Critical Rate-of-Rise of On-State Current, Repetitive 500 A/MS f Average Gate Power Dissipation, PG(AV) '• 2 Watts Storage Temperature, Tstp -40°C to +150°C Operating Temperature, Tj , -40°C to +125°C Mounting Force Required 2000 Lb, ± 10%
8.9 KN ± 10%
Off-State Voltage (Higher values may cause device switching) SYMBOL 'KKM and 'DRM 'HUM and 'DKM ROJC dv/dt MIN. 200 TYP. .05 500 MAX. .06 UNITS mA mA 0 07 Watt V/jjsec TEST CONDITION Tj - +25°C V = VDRM = VRRM Tj = 125°C v = VDKM = VRKM Junction-to-Case (DC) (Double-Side Cooled) Tj = 125°C, Gate Open. VDRM = Rated, Linear or Exponential Rising Waveform. Fvnnnentn! dv/dt - UI*M ( rtT>1 Hipier minimum ilv/clt selections available - consult factory. DC Gate Trigger Current DC Gate Trigger Voltage Peak On-State Voltage Turn-On Delay Time Conventional Circuit Commutatcd Turn-Off Time (with Reverse Voltage) C398 C397 C39S C397 Conventional Circuit Commutated Turn-Off Time (with Feedback Diode) C398 C397 IGT VGT V-,-M t,i li](ilioili-) 0. ! 5 IS 1.25 2.7 0.5 '10 150 300 125 3,0 3.0 t t CO t t mAdc Vdc Volts fj SO C /jsec A' sec Tc = +25°C, VD = 6 Vdc, RL = 3 Ohms Tc = -40°C, VD = 6 Vdc, RL = 3 Ohms Tc = +125°C, VD = 6 Vdc, RL = 3 Ohms Tc = -40°C to 25°C, VD = 6 Vdc, RL = 3 Ohms Tc- = 25°C to +I25°C, VD = 6 Vdc, RL = •' Ohms TC = I25°C, Vmui, R,. = 1000 Ohms Tc = •'•25"C, I i-M = 3000 Amps Peak. Duty Cycle < .01%. Pulse Width = 1 ms. Tc = +25°C, ITM = 50 Adc, VDRM. Gate Supply: 20 volt open circuit, 20 ohms, 0.1 /usec max. rise time, ft.ttt (1) Tc = +125°C (2) ITM = 500 Amps. (3) VR = 50 Volts Min. (4)' V|iRM (Reapplied) (5) Rate-of-rise of reappb'ed off-state voltage = 20 V/^sec (linear) (6) Commutation cli/ilt = 25 Amps/^(sec (7) Repetition rate = 1 pps, (8) Gate bias during turn-off interval = 0 volts, 100 ohms (1) Tr = +125°C C) ITM = SOO Amps. (3) VR = 50 Volts Min. (4) VI)KM (Reapplied) (5) Rate-of-rise of reappliecl off-state voltape = 200 V/AISL-C (linear) (6) Commutation di/dt = 25 Amps/yl/sec (7) Repetition rate = 1 pps. 8) Gate bias during turn-off interval = 0 volts, 100 ohms (1) Tc = +125°C (2) ITM = ^00 Amps 3) V,, = 1 Volt 4) VDRW (Reapplied) (5) Rate-of-rise ol renpplivd off-state voltage = 200 V/A/sec (linear) (6) Commutation di/dt = 25 Amps//Jsec 7) Repetition rate = 1 pps. (8) Gate bias during turn-off interval = 0 volts, 100 ohms