2SC3940 PANASONIC | Alldatasheet
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2SC3940, 2SC3940A Silicon NPN epitaxial planer type For low-frequency output amplification and driver amplification Complementary to 2SA1534 and 2SA1534A n Features l Low collector to emitter saturation voltage VCE(sat). l Allowing supply with the radial taping. n Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 1.5 150 –55 ~ +150 Unit V V V A A W 2SC3940 2SC3940A 2SC3940 2SC3940A n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO V CBO V CEO V EBO hFE1 *1 hFE2 V CE(sat) V BE(sat) fT C ob Conditions V CB = 20V , IE = 0 IC = 10mA, IE = 0 IC = 2mA, IB = 0 IE = 10mA, IC = 0 V CE = 10V , IC = 500mA*2 V CE = 5V , IB = 1A*2 IC = 500mA, IB = 50mA*2 IB = 500mA, Ia = 50mA*2 V CB = 10V , IE = –50mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz min typ 0.2 0.85 200 max 0.1 340 0.4 1.2 Unit mA V V V V V MHz pF Unit: mm 1:Emitter 2:Collector 3:Base TO–92NL Package 5.0–0.2 13.5–0.5 0.7–0.2 8.0–0.2 1.27 123 1.27 4.0–0.2 0.45 +0.15 –0.10.45 +0.15 –0.1 2.3–0.2 0.7–0.1 2.54–0.15 2SC3940 2SC3940A 2SC3940 2SC3940A *1hFE1 Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 *2 Pulse measurement
Transistor 2SC3940, 2SC3940A PC — Ta I C — V CE IC — IB V CE(sat) — IC V BE(sat) — IC hFE — IC fT — IE C ob — V CB V CER — R BE 0 160 40 120 80 14020 100 60 1.2 1.0 0.8 0.6 0.4 0.2 Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 0 826 4 1.5 1.25 1.0 0.75 0.5 0.25 IB=10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA Ta=25˚C Collector to emitter voltage VCE (V) Collector current IC (A) 01 2 10826 4 1.2 1.0 0.8 0.6 0.4 0.2 VCE =10V Ta=25˚C Base current IB (mA ) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3
10 IC /IB=10
Ta=75˚C 25˚C –25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3
100 IC /IB=10
Ta=–25˚C25˚C 75˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 600 500 400 300 200 100 VCE =10V Ta=75˚C 25˚C –25˚C Collector current IC (A) Forward current transfer ratio hFE 200 160 120 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.1 1 10 1000.3 3 30 120 100 IC =10mA Ta=25˚C 2SC3940A 2SC3940 Base to emitter resistance RBE (kW ) Collector to emitter voltage VCER (V)
Transistor 2SC3940, 2SC3940A ICEO — Ta Area of safe operation (ASO) 0 160 40 120 80 14020 100 60 102 103 104 VCE =10V Ambient temperature Ta (˚C) ICEO (Ta) ICEO (Ta=25˚C) 0.1 1 10 1000.3 3 30 0.001 0.003 0.01 0.03 0.1 0.3
10 Single pulse
Ta=25˚C t=10ms 2SC3940A 2SC3940 t=1s ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)