C3931

2SC3931 PANASONIC | Alldatasheet

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Silicon NPN epitaxial planer type For high-frequency amplification n Features l Optimum for RF amplification of FM/AM radios. l High transition frequency fT. l S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature 1:Base 2:Emitter EIAJ:SC–70 3:Collector S–Mini Type Package 2.1–0.1 1.3–0.10.9–0.1 0.7–0.1 0.3 +0.1 –0 0.15 +0.1 –0.05 2.0–0.2 0.650.2 0.65 0 to 0.1 0.2–0.1 Symbol V CBO V CEO V EBO IC PC Tj Tstg Ratings 150 150 –55 ~ +150 Unit V V V mA mW n Electrical Characteristics (Ta=25˚C) Parameter Collector to base voltage Emitter to base voltage Forward current transfer ratio Base to emitter voltage Transition frequency Common emitter reverse transfer capacitance Power gain Noise figure Symbol V CBO V EBO hFE * V BE fT C re PG NF Conditions IC = 10mA, IE = 0 IE = 10mA, IC = 0 V CB = 6V , IE = –1mA V CB = 6V , IE = 1mA V CB = 6V , IE = –1mA, f = 200MHz V CE = 6V , IC = 1mA, f = 10.7MHz V CB = 6V , IE = –1mA, f = 100MHz V CB = 6V , IE = –1mA, f = 100MHz min 450 typ 0.72 650 0.8 3.3 max 260 Unit V V V MHz pF dB dB Marking symbol :U *hFE Rank classification Rank C D hFE 65 ~ 160 100 ~ 260 Marking Symbol UC UD

PC — Ta I C — V CE IC — IB IC — V BE V CE(sat) — IC hFE — IC fT — IE Zrb — IE C re — V CE 0 160 40 120 80 14020 100 60 240 200 160 120 Ambient temperature Ta (˚C) Collector power dissipation PC (mW ) 01 8 61 2 Ta=25˚C IB=100mA 80mA 60mA 40mA 20mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 0 180 60 120 VCE =6V Ta=25˚C Base current IB (mA) Collector current IC (mA ) VCE =6V Ta=75˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) 0.1 1 10 1000.3 3 30 0.01 0.03 0.1 0.3

100 IC /IB=10

Ta=75˚C25˚C –25˚C Collector current IC (mA ) Collector to emitter saturation voltage VCE(sat) (V) 0.1 1 10 1000.3 3 30 360 300 240 180 120 VCE =6V Ta=75˚C 25˚C –25˚C Collector current IC (mA ) Forward current transfer ratio hFE 1200 1000 800 600 400 200 VCB =6V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (MHz ) 120 100 VCB =6V f=2MHz Ta=25˚C Emitter current IE (mA ) Reverse transfer impedance Zrb (W ) 0.1 1 10 1000.3 3 30 2.4 2.0 1.6 1.2 0.8 0.4 IC =1mA f=10.7MHz Ta=25˚C Collector to emitter voltage VCE (V) Common emitter reverse transfer capacitance Cre (pF)

C ob — V CB PG — IE NF — IE bie — gie bre — gre bfe — gfe boe — goe 03 0 252051 5 10 1.2 1.0 0.8 0.6 0.4 0.2 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) f=100MHz R g=50W Ta=25˚C VCE =10V Emitter current IE (mA ) Power gain PG (dB) f=100MHz R g=50kW Ta=25˚C VCE =6V, 10V Emitter current IE (mA ) Noise figure NF (dB) 01 5 936 1 2 yie=gie+jbie VCE =10V 100 100 –1mA –2mA –4mA –7mA IE=– 0.5mA 150 f=10.7MHz Input conductance gie (mS ) Input susceptance bie (mS ) yre=gre+jbre VCE =10V f=150MHz IE=–7mA –4mA –1mA 100 10.7 Reverse transfer conductance gre (mS ) Reverse transfer susceptance bre (mS ) 0 100 8020 60 40 –120 –20 –40 –60 –80 –100 yfe=gfe+jbfe VCE =10V f=150MHz 10.7 – 0.4mA –1mA –2mA –4mA IE=–7mA 100 100 100 150 150 Forward transfer conductance gfe (mS ) Forward transfer susceptance bfe (mS ) 01 0 826 4 1.2 1.0 0.8 0.6 0.4 0.2 yoe=goe+jboe VCE =10Vf=10.7MHz IE=– 0.5mA –2mA –4mA –7mA –1mA 100 150 Output conductance goe (mS ) Output susceptance boe (mS )