C392

C392 NJSEMI | Alldatasheet

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, D nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 HIGH SPEED Silicon Controlled Rectifier

600 Volts (500-700) Amps RMS

. C392,C393,C394,C395A C392,C393,C394,C395B C392,C393,C394,C395C C392,C393,C394,C395D C392,C393,C394,C395E- C392,C393,C394,C395M Repetitive Peak Off -State Voltage, VDRM Tj - -40°C 10 -M25°C

100 Volts

Reverse Voltage, VRRM® Tj = -40°C to -H25°C Reverse Voltage, VRSM^ Tj = 125UC ISO Volts 300 400 500 600 720 Q Hall' sincwavc waveform, 10ms max. pulse width. Peak One Cycle Surge (Non-Repetitive) On-State Current, I-raM (60 I!/.) - C392, C393 5500 Amperes Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) - C394, C395 8000 Amperes I2t (for fusing) for times > 1.5 milliseconds - C392, C393 50,000 (RMS Ampere)2 Seconds I2t (for fusing) for times > 1.5 milliseconds- C394, C395 '. 100,000 (RMS Ampere)1 Seconds I2t (for fusing) for times > 8.3 milliseconds - C392, C393 120,000 (RMS Ampere)2 Seconds I2t (for fusing) for times > 8.3 milliseconds - C394, C395 250,000 (RMS Ampere)2 Seconds Critical Rate-of-Rise of On-State Current, Non-Repetitive 800 A//ast Critical Rate-of-Risc of On-State Current, Repetitive 500 A/MS t Average Gate Oower Dissipation, PG(AV) - Watts Storage Temperature, Tslg -40°C to +150°C Operating Temperature, Tj -40°C to +125°C Mounting .Force Required 2000 Lb. ± 10%

8.9 KN ± 10%

fdi/dt ratings established in accordance with K1A-NHMA Standard RS-397, Section 5.2.2.6 for conditions of max. rated VDRM; 20 volts, 20 ohms gate trigger source with 0.5 jis short trigger current rise time. NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information Furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors

(Higher values may cause device switching) SYMBOL IRRM and IDRM JRRM and IDRM ROJC dv/dt MIN. 200 TYP. .05 500 MAX. .06 UNITS mA mA °C/Watt V/pscc TEST CONDITION Tj = +25°C v = VDKM = VKRM Tj = 125°C 'V = VDRM = VRRM Junction-to-Casc (Double-Side Cooled Tj = +125°C, Gate Open. VDRM = Rated Linear or lixponuntial Rising Waveform. FYnnTit-nt-ri] rlv'rfl — nKM ( f.TT| Higher minimum dv/dt selections available - consult factory. Holding Current DC Gate Trigger Current IH 'GT 100 1000 200 400 150 mAdc mAdc Tc = +25°C, Anode Supply = 24Vdc, Initial On-State Current = 10 Amps. Tc = +25°C, VD = lOVdc, RL = 1 Ohm Tc = -40°C, VD = 10 Vdc, RL = 1 Ohm Tc = +125°C, VD = 10 Vdc, RL = 1 Ohm CHARACTERISTICS C392/C393/C394/C395 TEST DC Gate Trigger Voltage Peak On-State Voltage C392, C393 C394, C395 Turn-On Delay Time Conventional Circuit Commutated Turn-Off Time (with Reverse Voltage) C392, C394 C393, C395 C392, C394 C393, C395 Conventional Circuit Commutated Turn-Off Time (with Feedback Diode) C392, C394 C393, C395 SYMBOL VGT VTM td tq tq (diode) MIN. 0.15 TYP. 1.50 3.3 2.3 0.5 MAX. 3.0 4.2 2.5 t I t f t UNITS Vdc Volts Aiscc Aisec /isec TEST CONDITION Tc = -40°C to 25°C, VD = 10 Vdc, RL = 1 Ohm' Tc = 25°C to +125°C, VD = 10 Vdc, RL = 1 Ohm Tc = +125°C, VDRM, RL = 500 Ohms Tc = +25°C, ITM = 3000 Amps Peak Duty Cycle < .01%. Pulse Width = 3,0 ms Tc = +25°C, ITM = 50 Adc, VDRM, Gate Supply: 20 Volt Open Circuit, 20 Ohms, 0.1 /jsec max. rise time. tt,ttt (1) Tc = +125°C (2) ITM = 500 Amps. (3) VR = 50 Volts Min. (4) VDRM (Reapplied) (5) Rate-of-rise of reapplied off-state voltage = 20 V//ascc (linear). (6) Commutation di/dt = 25 Amps/jusec (7) Repetition rate = 1 pps. (8) Gate bias during turn-off interval = 0 volts, 100 ohms (1) Tc = +125°C (2) ITM = 500 Amps (3) VR = 50 Volts Min. (4) VDRM (Reapplied) (5) Rate-of-rise of reapplied off-state voltage = 200 V/^sec (linear). (6) Commutation di/dt = 25 Amps/^isec (7) Repetition rate = 1 pps. (8) Gate bias during turn-off interval = 0 volts, 100 ohms (1) Tc =+125°C (2) ITM = 50° Amps (3) VR = 1 Volt (4) VDRM (Reapplied) (5) Rate-of-rise of reapplied off-state voltage = 200 V/AISCC (linear). (6) Commutation di/dt = 25 Amps/^tsec (7) Repetition rate = 1 pps. (8) Gate bias during turn-off interval = 0 volts, 100 ohms fConsult factory for specified maximum turn-off time.

• (••f Delay time may increase significantly as the gate drive approaches the IQJ of the Device Under Test, urrent risetime as measured with a current probe, or voltage risctimc across a non-inductive resistor.