C390 NJSEMI | Alldatasheet

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<£/V £M7 cysmt- Conductor £Pioaucti, One.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. C390 SCR TELEPHONE: (201) 376-2922 (212)227-6005 FAX: (201) 376-8960 850A RMS UP TO 1300 VOLTS MAXIMUM ALLOWABLE RATINGS TYPE C390E C390M C390S C390N C390T C390P C390PA C390PB C390PC REPETITIVE PEAK OFF-STATE VOLT AGE, VDRMm TJ=-400Cto+125<'C SOOVolls 600 700 800 900 IOOO IIOO 1 200 1 300 REPETITIVE PEAK REVERSE VOLTAGE, VKKMn> TJ=-40°Cto+125c'C

500 Volts

VOLTAGE, VRSM(D Tj= +125°C

600 Volts

(1) Half sine wave waveform, 10ms maximum duration. Average Forward Current, On-State Depends on conduction angle (See Charts 1 and 3) Peak One-Cycle Surge ON-state Current, ITSM 8000 amperes Maximum Rate of Rise of Anode Current Switching from lOOOv 800 A/A sec JEDEC TEST For repetitive DI/DT-See Fig, 11 Ft (for fusing) (for times = 1.5 milliseconds) See Fig. 9 100,000 ampere2 seconds Ft (for fusing) (at 8.3 milliseconds) 265,000 ampere'seconds Peak Gate Power Dissipation, P™ 200 Watts ©40^sec pulse AverageGate Power Dissipation, P(;(AV| 5 Watts Peak Reverse Gate Voltage, VGRM 5 Volts Storage and Operating Temperature, TSTO&Tj —40°C to +125°C Mounting Force Required 2000 Ibs, ± 10% 910kg. ± 10% Quality Semi-Conductors

Resistance (DC) Critical Exponential Rate of Rise of For- ward Blocking Voltage (Higher values may cause device switching) Holding Current Latching Current Delay Time Gate Trigger Current See Fig. 1 1 For Recommended Gate Drive Conditions. Gate Trigger Voltage Peak On-Vollage Circuited Cpmmutated Turn-OrTTime SYMBOL

1 ORM

' RRM I DRM and I RRM R«J.C dv/dt IH IL IGT VCT VFM t,* WIN. 200 ,35 TYP. 100 .25 125 MAX. .059 .118 500 150 300 125 2.4 UNITS rnA mA °C/watt V//xsec mAdc Adc ft sec mAdc Vdc Volts /usec TEST CONDITIONS T,= + 25°C, V = VDRM=VRKM Tj=+125°C, V = VDRM = VRRM Junction to case — Double Side Cooling (D.C.) Junction to case — Single Side Cooling (D.C.) Tj=+l25QC, V,)KM = Rated, Gate open. Tc ~ + 25°C, Anode supply= 24 Vdc. Initial forward current = 2.0 amps. Tc = + 25°C, Anode voltage =24 Vdc, Load resistance 12 ohms max. TC = + 25°C, IT-=50Adc Gate supply: 20V, 20ft, 500mA, 0. 1 /xsec max, rise time. TC=+25°C, VD=6Vdc, RL = 3 ohms TC=-40°C, VD=6Vdc, RL = 3 ohms Tc=+ I20°C, VD = 6 Vdc, R,.= 3 ohms TC = -40°C to + 125°C, VD = 6 Vdc, RL=3 ohms TC = +I25°C, VD = Rated, RL = 1000 ohms TC = + 25°C, IT=3000 A peak. Duty cycles 0.01% (3) V =50 volts min., (4) VDRM (reapplied), (5) Rale of rise of reapplied forward blocking voltage =20 V/ jisec (linear). [6) Commutalion di/dl = 25 Amps/Msec. [7) Repelilion raie = 1 pps. ^8) Gate bias during turn-off interval » 0 volts. 100 ohms. Q NOTE: Tc Case Temperature (measured on heatsink 1/8 inch from base of SCR.) uality Semi-Conductors