2SA1507_10 SANYO | Alldatasheet

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Technical content

Features

  • High breakdown voltage.
  • Large current capacity.
  • Adoption of FBET and MBIT process.
  • The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902. Specifications ( ) : 2SA1507 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V CBO (- -)180 V Collector-to-Emitter Voltage V CEO (- -)160 V Emitter-to-Base Voltage V EBO (- -)6 V Collector Current I C (- -)1.5 A Collector Current (Pulse) I CP (- -)2.5 A Collector Dissipation P C 1.5 W Tc=25°C1 0 W Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current I CBO VCB=(- -)120V, IE=0A (- -)1.0 μA Emitter Cutoff Current I EBO VEB=(- -)4V, IC=0A (- -)1.0 μA Continued on next page. www.semiconductor-sanyo.com/network 21710CB TK IM / 53002RM(KT)/71598HA(KT)O2196TS(KOTO) 8-9520/3307KI/9116AT,TS Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 2SA1507 / 2SC3902 PNP / NPN Epitaxial Planar Silicon Transistors 160V / 1.5A Switching Applications

No.2101-2/5 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit DC Current Gain hFE1V CE=(- -)5V, IC=(- -)100mA 100* 400* hFE2V CE=(- -)5V, IC=(- -)10mA 90 Gain-Bandwidth Product f T VCE=(- -)10V, IC=(- -)50mA 120 MHz Output Capacitance Cob V CB=(- -)10V, f=1MHz (22)14 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=(- -)500mA, IB=(- -)50mA (- -0.2)0.13 (- -0.5)0.45 V Base-to-Emitter Saturation Voltage V BE(sat) I C=(- -)500mA, IB=(- -)50mA (- -)0.85 (- -)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=(- -)10μA, IE=0A (- -)180 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=(- -)1mA, RBE=∞ (- -)160 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=(- -)10μA, IC=0A (- -)6 V Turn-On Time t on See specified Test Circuit. (0.7)0.04 μs Storage Time t stg See specified Test Circuit. (0.7)1.2 μs Fall Time t f See specified Test Circuit. (0.04)0.08 μs *: The 2SA1507 / 2SC3902 are classified by 100mA hFE as follows: Rank R S T hFE 100 to 200 140 to 280 200 to 400 Package Dimensions Switching Time Test Circuit unit : mm (typ) 7516A-002 IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A ITR03822 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ITR03823 --40mA--60mA--80mA --20mA --10mA --5mA --2mA --1mA IB=0mA 2SA1507 2SC3902 IB=0mA 20mA 50mA 30mA 40mA 10mA 5mA 2mA 1mA 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML 0.8 0.75 2.4 4.8 0.8 0.7 8.0 4.0 1.0 1.0 3.6 1.4 1.6 1.51.7 7.53.0 15.5 11.0 3.3 3.0 123 INPUT 100V 50Ω RL 100μF 470 μF --5V IC=10IB1=--10IB2=0.7A (For PNP, the polarity is reversed.) + + VR PW=20μs D.C.≤1% RB 14.3Ω IB1 IB2

No.2101-3/5 Collector-to-Base V oltage, VCB -- V Cob -- VCB Output Capacitance, Cob -- pF Gain-Bandwidth Product, fT -- MHz fT -- IC Collector Current, IC -- A ITR03831ITR03830 20.01 5773 2 5 7 30.1 21.0 100 21.0 577 32 5 7 310 100 100 2SA1507 2SC3902 2SA1507 2SC3902 2SA1507 / 2SC3902 VCE=10V 2SA1507 / 2SC3902 f=1MHz For PNP, minus sign is omitted. For PNP, minus sign is omitted. DC Current Gain, hFE hFE -- IC Collector Current, IC -- ACollector Current, IC -- A DC Current Gain, hFE hFE -- IC IC -- VBE Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- A IC -- VBE IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A IC -- VCE Collector-to-Emitter V oltage, VCE -- V Collector Current, IC -- A --0.2 --0.6 --0.4 --0.8 --1.0 0.2 0.6 0.4 0.8 1.0 10 20 30 40 500 ITR03825ITR03824 2SC3902 IB=0mA 2SA1507 --2.5mA --2.0mA --3.0mA --3.5mA --5.0mA --4.0mA --4.5mA --1.5mA --1.0mA --0.5mA IB=0mA 0.5mA 5.0 mA 2.5mA 3.5mA 4.0mA 2.0mA 3.0mA 1.5mA 1.0mA 4.5mA ITR03829ITR03828 ITR03826 --0.4 --0.8 --1.6 --1.2 --1.4 --1.0 --0.6 --0.2 0.4 0.8 1.6 1.4 1.0 0.6 0.2 1.2 100 100 5773 20.01 0.1 57323 21.0 ITR03827 2SA1507 VCE=--5V 2SC3902 VCE=5V 2SA1507 VCE=--5V 2SC3902 VCE=5V --25 Ta=75 --25°C 25°CTa=75°C --25 Ta=75 --25°C25°C Ta=75°C

No.2101-4/5 Case Temperature, Tc -- °C PC -- Tc Collector Dissipation, PC -- W 0 20 80 100 6040 160 140120 ITR03838 2SA1507 / 2SC3902 Collector-to-Emitter V oltage, VCE -- V A S O Collector Current, IC -- A Ambient Temperature, Ta -- °C PC -- Ta Collector Dissipation, PC -- W 0.01 1.0 0.1 1.073 2 0.2 0.4 0.6 0.8 1.6 1.4 1.5 1.2 1.0 0 20 80 100 6040 160 140120 ITR03836 No heat sink 7 1053 27 53 2100 ITR03837 1ms ms100 ms DC operation ( Ta=25 °C) DC operation ( Tc=25 °C) Ta=25°C Single pulse For PNP, minus sign is omitted. 2SA1507 / 2SC3902 2SA1507 / 2SC3902 ICP=2.5A IC=1.5A VBE(sat) -- IC Collector Current, IC -- A Collector Current, IC -- A VCE(sat) -- IC Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Collector Current, IC -- A VCE(sat) -- IC VBE(sat) -- IC Collector Current, IC -- A Base-to-Emitter Saturation V oltage, VBE(sat) -- V ITR03834 --1.0 --10 1.0 7 0.01 0.1 5732 1.057323 2 ITR03835 2SA1507 IC / IB=10 2SC3902 IC / IB=10 25°C 75°C Ta=--25°C 25°C 75°C Ta=--25°C --10000 --1000 --100 10000 1000 100 ITR03832 ITR03833 2SC3902 IC / IB=10 2SA1507 IC / IB=10 --25°C 25°C Ta=75°C --25°C 25°C Ta=75°C

No.2101-5/5 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of February, 2010. Specifications and information herein are subject to change without notice.