C388E

C387 NJSEMI | Alldatasheet

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Technical content

zSsmi-donductor £7-\\oaucta. Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 SCR C387/C388 tl RMS (Max) for half sine wave current @ TC = 651C, 60 Hz is 500 amperes. I RMS (Max) for rectangular wave current @ TC = 65^, 60 Hz and 50% Duty Cycle at low di/dt (5A/psec) is 481 amperes. Forward and reverse blocking capabilities to 1200 volts Very low switching losses at high frequencies 40 ^sec. maximum turnoff time at severe operating conditions (C387)

30 Msec, maximum turnoff at severe operating conditions (C388)

di/dt rating of 800 A//*sec. Soft firing gate I" creepage-path, glazed-ceramic package T»LENGTH OF STRAIGHT LEAD 1 — FUT WITHIN 001 SYV A B C E F G H J K L M N P R s T u DEC INC MIN. .240 110 215 .166 .060 2.200 .Oil .030 .056 1.000 i^OSO 1 .130 1,300 .140 12.200 .137 MAL HES _M££_j .260 .130 .191 075 1.430 1.065 25OO .019 130 060 1.065 .096 ^_I50_ 1 345 2 150 . 160 12.360 .153 MET M MIN. 6.096 2.794 6.223 4724 1.524 55.88 2.794 .762 1.422 25.40 .762 3302 33.02 3.556 309. 9 3.480 RIC MAX. 6.604 3302 4851 1.905 3632 27051 63.50 3483 3.302 1.524 27.05 2 436 3.810 34 16 54.61 4.064 313.9 3.8M NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors

Off-State Voltage,; TC = -40°Cto+125°C

500 Volts

Reverse Voltage, VRRM(D Tc=-400Cto+125°C Non-repetitive' Peak Reverse Voltage, TC = +125°C |

600 Volts i

(1) Half sine wave voltage pulM, 10 milllMcond maximum duration. Average On-State Current, Ii(AV) Peak One Cycle Surge (non-rep) On-State Current, ITSM .... I2t (for fusing) for times = 1.5 milliseconds I2t (for fusing) for times > 8.3 milliseconds Critical Rate-of-Rise of On-State Current, di/dt During Turn-On Interval Long Term Repetitive DI/DT (refer to fig. 17. note 4) Peak Gate Power Dissipation, PGM. . . (Pulse Width = 10/isec) Average Gate Power Dissipation, Pc(AV) Peak Negative Gate Voltage, VGM Storage Temperature, TSTG Operating Temperature, Tj Mounting Force (See Charts)

5500 Amperes

,50,000 Ampere2seconds 120,000 Ampere2seconds . 800 Amperes per microsecondf 500 A/M sec.'

400 Watts

2 Watts

20 Volts

~40<fCtOTl25°C -400Cto+125'C 2000 Ib. ±200 Ib. t Required trigger source-20 volte, 20 ohmt; maximum twitching voltage - 1200 voltt; short-circuit gate supply current rlsetime -.05n see. (Thii short-circuit current may be measured with a TEKTRONICS current probe.), di/dt rating is established in accordance with EIA-NEMA Standard RS-397 Section 5.1.2.4. Immediately after each current pulse, off- slate (blocking) voltage capability may be temporarily lost for durations lets than the period of the applied pulse repetition rate. The pulse repetition rate for this test is 400 Hz: The duration of the di/dt test condition is 5.0 seconds (minimum). "This rating established by long term life test on similar devices. CHARACTERISTICS TEST Repetitive Peak Reverse and Off-State Current C387/C388E C387/C388M C387/C388S C387/C388N C387/C388T C387/C388P C387/C388PA C387/C388PB Repetitive Peak Reverse and Off- State Current C387/C388F, C387/C388M C387/C388S C387/C388N C387/C388T C387/C388P C387/C388PA C387/C388PB SYMBOL IRRM and IDRM IRRM and IDRM MIN. TYP. S MAX. UNITS mA mA TEST CONDITION Tc » +25°C VDRM = VRRM= 500Voltspcak

600 Volts peak

700 Volts peak

800 Volts peak

900 Volts peak

1000 Volts peak

1100 Volts peak

1200 Volts peak

TC= 125t VDRM = VRRM= SOOVoltspeak

fl&,t-l> ;.- . . yfefciLtJi1^- ?.W,'.i:iJSi..' ^vk; Effective Thermal Resistance Critical Exponential Rate of Rise of Forward Blocking Voltage (Higher values may cause device switching) Holding Current DC Gate Trigger Current DC Gate Trigger Voltage Peak On-State Voltage Turn-On Time (Delay Time

• f Rise Timel Delay Time Conventional Circuit Commutated Turn-Off-Time (with Reverse Voltage) Conventional Circuit Commutated Turn-Off-Time (with Feedback Diode) Pulse Circuit Commutated Turn-off- Time (with Reverse Voltage) Puke Circuit Commutated rurn-Off-Time ''with Feedback Diode) SYMBOL R0JC dv/dt IH IGT VGT VTM 1GT td tq C388 C387 C388 0387 tq(diode) C388 C387 tq(pulse) C388 C387 tq(puLse) (diode) C388 C387 MIN. 200 0.15 Tyft£; .05 500 1.25 3.3 0.5 MAX. .06 500 150 300 125 3.0 4.2 2.0 UNITS °C/watt V//&ec mAdc rnAdc mAdc mAdc Vdc Vdc Vdc Volts |/sec /Isec jusec /isec Msec /isec [Jtsec jusec /Jsec /Usec jUsec /^sec ''.'., • T*ST CONDITION .-'^IS Junction to case ( DC) Double Side Cooled VDRM, TC = +125°C, Gate open. TC = +25°C, Anode supply = 24 Vdc. Initial forward current = 2 amps, TC •= +25°C, VD = 6 Vdc, RL = 3 ohms. TC = -40t, VD = 6 Vdc, RL = 3 ohms. TC = +125°C, VD = 6 Vdc, RL * 3 ohms. TC = -40°C to 0°C, VD = 6 Vdc, RL • 3 ohms, TC = CTC to +125°C, VD - 6 Vdc, RL - 3 ohms. TC = i2s°c, VDRM, RL - 1000 ohms. TC = +25°C, ITM = 3000 peak. Duty cycle^ .01%. TC = +25°C, IT = 50 Adc, VDRM. Gate supply: 10 volt open circuit, 20 ohm, 1.0 /&ec max. rise time.jtt TC - +25°C, IT = 50 Adc, VDRM, Gate supply: 10 volt open circuit, 20 ohm, 0.1 A«sec max, rise time, ft.ttt (3) VR = 50 volts min., (4) VDRM (reapplied), (5) Rate of rise of reapplied forward blocking voltage = 20 V/psec (linear). (6) Commutation di/dt = 25 Amps/Aisec. (7) Repetition rate = 1 pps. (8) Gate bias during turn-off interval « 0 volts, 100 ohms. (1) TC«=-H25*C, (2) IT=500A, (3) VR = SO volts min., (4) VDRM (reapplied), (5) Rate of rise of reapptied forward blocking voltage = 200 V/jUsec (linear). (6) Commutation di/dt = 25 Amps//isec. (7) Repetition rate = 1 pps. (8) Gate bias during turn-off interval = 0 volts, 100 ohms. (1) TC-=-H25*C, (2) IT=500A, (3) VR = 1 volt (Forward drop of GE A396 rectifier diode at IT = 150A) (4) VDRM, (5) Rate of rise of reapplied forward blocking voltage = 200 V//Usec (linear). (6) Commutation di/dt = 25 Amps//L(sec. (7) Repetition rate = 1 pps. (8) Gate bias during turn-off interval = 0 volts, 100 ohms. (1) TC = +125°C, VDRM (reapplied), (2) Rate of rise of reapplied forward blocking voltage = 200 V/jttec (linear), (3) Rep. rate = 400 Hz,, (4) Gate supply = 20 vplts, 80 ohms, l.Ofttec max, rise time. (5) IT = 500A peak, tp = 3 /usec (half sine wave), (6) VR = 50 volts min. (1) TC " +125°C, VDRM (reapplied), (2) Rate of rise of reapplied forward blocking voltage = 200 V/jusec (linear), (3) Rep. rate = 400 Hz., (4) Gate supply » 20 volts, 80 ohms, l.OjUsec max. rise time, (5) IT = 500A peak, tp - 3 /Osec (half sine wave), (6) VR = 1 volt (Forward drop of GE A396 rectifier diode at IT = 150A). Factory for $pecrfi«d maximum TurrvOff Time. Time may increau signHicantly as tha gata drive approaches the IGT of the Device Under Test (D.U.T.). 'tcurrent risetim« at measured with a current probe, or voltage rise time across a non-inductive resistor. * Consult factor" for higher dv/dt selections of 300, 400, or 500 volts/JUsec.