C384 NJSEMI | Alldatasheet

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<^£.mL-(2ondiictoi *lP 10 ducts., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. HIGH SPEED Silicon Controlled Rectifier TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 I C384/C385~|

800 Volts

C384 and C385 Silicon Controlled Rectifiers are de- signed for power switching at high frequencies. These are all-diffused Press- Pak devices, employing the field-proven amplifying gate. FEATURES:

  • Fully Characterized for Operation in Inverter and Chopper Applications.
  • High di/dt Ratings.
  • High dv/dt Capability with Selections Available.
  • Rugged Hermetic Glazed Ceramic Package. MAXIMUM ALLOWABLE RATINGS TYPES C384/C385A C384/C385B C384/C385C C384/C385D C384/C385E C384/C385M C385S C385N REPETITIVE PEAK OFF-STATE VOLTAGE, VDRMl Tj = -40°C to +125°C

100 Volts

800' REPETITIVE PEAK REVERSE VOLTAGE, VRRM1 Tj = -40°C to +125°C REVERSE VOLTAGE, VRRM' Tj = +125°C

200 Volts

1 Half sincw;ivc waveform, 10 ms max. pulse width. Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (60 Hz) 3500 Amperes Peak One Cycle Surge (Non-Repetitive) On-State Current, ITSM (50 Hz) 3200 Amperes I2t (for fusing) for times > 1.5 milliseconds 35,000 (RMS Ampere)2 Seconds I2t (for fusing) for times > 8.3 milliseconds 50,000 (RMS Ampere)2 Seconds Critical Ratc-of-Rise of On-State Current, Non-Repetitivet 800 A/MS Critical Rate-of-Risc of On-State Current, Repetitive! 500 A/MS Average Gate Power Dissipation, PG(AV) 2 Watts Storage Temperature, Tstg -40°C to +150°C Operating Temperature, Tj -40°C to +125°C Mounting Force Required 800 Lbs. ± 10%

3.56 KN ± 10%

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placina orders. Quality Semi-Conductors

Off-State Voltage (Higher values may cause device switching) SYMBOL !RKM and JDKM JRKM and IDRM ROJC dv/dl MIN. 200 TYP. IS 500 MAX. 0.19 0.095 UNITS mA mA °C/Watt V/juscc TEST CONDITIONS Tj = +25°C V = VDRM = VRRM Tj = 125°C V = VDRM=VRKM Junction-to-Casc - One-Side Cooled Junction-to-Casc — Double-Side Cooled Tj = -H25°C, Gate Open. Vm<M = Rated linear or exponential rising waveform. Exponential dv/dl = — — "- (.632) Higher minimum clv/dt selections available - consult 1'actory. Holding Current DC Gate Trigger Current DC Gate Trigger Voltage Peak On-State Voltage Turn-On Delay Time Conventional Circuit Commutated Turn-Off Time (with Reverse Voltage) Conventional Circuit Commutated Turn-Off Time (with Feedback Diode) IH IGT VGT VTM td tq C385 C384 tq (diode) C385 C384 0.15 125 175 100 2.3 500 300 500 250 5.0 .3.0 2.85 t t mAdc mAd c Vdc Volts /jsec AISCC /Jsec Tc = +25°C, Anode Supply = 24 Vdc, Initial On-State Current = 2,5 Amps. Tc = +25°C, VD = 6 Vdc, RL = 3 Ohms 'Tc = -40°C, VD = 6 Vdc, RL = 3 Ohms Tc = +125°C, VD = 6 Vdc, RL = 3 Ohms Tc = -40°C to 0°C, VD = 6 Vdc, RL = 3 Ohms Tc =0°C to +125°C, VD = 6 Vdc, RL = 3 Ohms Tc = +125°C,VDRM,RL = 1000 Ohms Tc = +25°C, ITM = 1500 Amps. Peak. Duty Cycle < .01% Tc = +25°C, IT = SO Me, VDRM, Gate Supply: 20 Volt-Open Circuit, 20 Ohm, 0.1/^sec. max, rise time. (1) Tc = +125°C (2) ITM = 250 Amps. (3) VR = 50 Volts MiJi. (4) VDRM (Reapplied) (5) Rate-of-Rise of Reapplied Off-State Voltage = 200 V/Msec (linear) (6) Commutation di/dt = 12.5 Amps/Msec. (7) Duty Cycle < .01% (8) Gate Bias During Turn-Off Interval = 0 Volts, 100 Ohms. (1) Tc = +125°C (2) ITM - 250 Amps. (3) VR = 1 Volt (4) VDRM (Reapplied) (5) Rate-of-Risc of Reapplied Off-State Voltage = 200 V/jUsec (linear) (6) Commutation di/dt = 12.5 Amps/Msec (7) Duty Cycle < .01% (8) Gate Bias During Turn-Off Interval =

0 Volts, 100 Ohms

  • fConsult factory for maximum turn-off time.