2SC3807 SANYO | Alldatasheet
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Features
', Large current capacity (1g=2A) . Adoption of MBIT process + High DC current gain (hy ,=800 to 3200) » Low collector-to-emitter saturation voltage (V, <0.5V) High V_o. (V__,215V) CE(saty™ meen “eBo SY EBO= Absolute Maximum Ratings at Ta=25°C unit Collector to Base Voltage Vogo 30° -V Collector to Emitter Voltage VoEo 25. V Emitter to Base Voltage VEBO 15 Vv Collector Current Io 2 A Peak Collector Current i¢p 4 A Collector Dissipation Pe ° 1.2 W Te=25 C 15 of Junction Temperature Tj 150 of Storage Temperature Tstg -55 to +150 Cc Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current Io Vog720V, 1,=0 0.1 pa Emitter Cutoff Current 158 VaptlOV.I,=0 0.1 pa DC Current Gain h 21) Vap@5Vs1,=500mA 800 1500 3200 FE CE C. hyp (2) Vogt oVot =1A 600 Gain-Bandwidth Product fF Vopr lov, £ =50mA 260 Miz Output Capacitance cob Vog=lOV, £=1MHz 27 pF Collector to Emitter VoE(sat) TpslA, 1,=20mA 0.15 0.5 Vv Saturation Voltage Base to Emitter V. T,=1A,1,=20mA 0.85 1.2 Vv Saturation Voltage BE(sat) “C B Collector to Base v T,=10pA,1,=0 30 “ov Breakdown Voltage (BR) CBO C E Continued on next page. Package Dimensions 20434, (unit: mm ) no 15.5 ; [poo eRe a 207 tds B: Base E: Emitter SANYO: TO126LP SANYO Electric Co.,Ltd.. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 5257KI/DOL6AT, TS No. 2018-1/3
"2803807 : eee Continued from preceding page. 2 min typ max unit Collector to Emitter V T=1mA. = 00 25 . v Breakdown Voltage (BR)CEO “C *oE Emitter to Base VBR) EBO 1,7 10uA,1,=0 15 v Turn-on time ton See specified Test Circuit. 0.14 ps Storage Temperature tstg " 1.35 ps Fall Time tf " 0.1 ps Switching Time Test Circuit P 181 _ ae | vag a ar Unit (resistance: 9, capacitance: F) av Yecs10V 71g =—71g2=I¢=700mA
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ge, TPT rei sé, ee ere ff Chee eee gf Pere ss z 4 ae COLT ge LU a 3 ge 8a “0 100 700) ao ‘0 Fi) or) Collector Current, I, - m Collector Current, I, - mA ASO 16 Po - Ta < {af a mN 1 a a rf 2. N ° ES ES a N Z SOS a INA 3 BN! zo ee peo EL RT PES ESS Pooch oo 4 }—{+ ft ONE ee Ney giro ge PPR PT Coes 3 12 PH Ss YK | Wo wm % »n cy oO Cs) oO nO ir) 160 Collector to Emitter Voltage ,Vop - V Ambient Temperature,Ta - °c No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the lke, the failure of which may directly or indirectly cause injury, death or property loss. W Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO.,-LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: @® Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on' SANYO ELECTRIC CO., LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. WE Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No. 2018-3/3