2SC3611 PANASONIC | Alldatasheet
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Technical content
Silicon NPN epitaxial planar type For video amplifier I Features
- High transition frequency fT
- Small collector output capacitance Cob
- Wide current range
- TO-126B package which requires no insulation plate for installa- tion to the heat sink I Absolute Maximum Ratings TC = 25°C 1 : Base 2 : Collector 3 : Emitter Unit: mm I Electrical Characteristics TC = 25°C Parameter Symbol Rating Unit Collector to base voltage V CBO 110 V Collector to emitter voltage V CER 100 V VCEO 50 V Emitter to base voltage V EBO 3.5 V Peak collector current I CP 300 mA Collector current I C 150 mA Collector power TC = 25°CP C 1.2 W dissipation Ta = 25°C 4.0 * Junction temperature T j 150 °C Storage temperature T stg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector cutoff current I CEO VCE = 35 V, IB = 0 10 µA Collector to base voltage V CBO IC = 100 µA, IE = 0 110 V Collector to emitter voltage V CER IC = 500 µA, RBE = 470 Ω 100 V VCEO IC = 1 mA, IB = 0 50 V Emitter to base voltage V EBO IE = 100 µA, IC = 0 3.5 V Forward current transfer ratio h FE VCE = 5 V, IC = 100 mA 20 Collector to emitter saturation voltage VCE(sat) IC = 150 mA, IB = 15 mA 0.5 V Transition frequency f T1 VCB = 10 V, IE = −10 mA, f = 200 MHz 300 MHz fT2 VCB = 10 V, IE = −110 mA, f = 200 MHz 350 MHz Collector output capacitance C ob VCB = 30 V, IE = 0, f = 1 MHz 3 pF Note) *: With a 100 × 100 × 2 mm A1 heat sink 8.0+0.5 –0.1 1.9±0.1 3.05±0.1 3.8±0.3 11.0±0.516.0±1.0 3.2±0.2 0.75±0.1 0.5±0.1 2.3±0.2 4.6±0.2 0.5±0.1 1.76±0.1 123 φ 3.16±0.1
VCE(sat) IC hFE IC fT IE PC Ta IC VCE IC VBE Cob VCB Area of safe operation (ASO) 0 240 40 20080 160120 (1) (2) (1)With a 100×100×2mm Al heat sink (2)Without heat sink Ambient temperature Ta (˚C) Collector power dissipation PC (W) 01 2 21 0 48 6 240 200 160 120 TC=25˚C 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA IB=5.0mA Collector to emitter voltage VCE (V) Collector current IC (mA) 120 100 VCE=5V TC=100˚C –25˚C 25˚C Base to emitter voltage VBE (V) Collector current IC (mA) 0.01 0.03 0.1 0.3 13 10 30 100 300 IC/IB=5 –25˚C 25˚C TC=100˚C Collector current IC (mA) Collector to emitter saturation voltage VCE(sat) (V) 0.1 11 00.3 3 30 100 100 300 1000 3000 10000 TC=100˚C 25˚C –25˚C VCE=5V Collector current IC (mA) Forward current transfer ratio hFE 600 500 400 300 200 100 VCB=10V f=200MHz T C=25˚C Emitter current IE (mA) Transition frequency fT (MHz) 3 10 30 100 IE=0 f=1MHz T C=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0.1 0.3 100 300 1000 10 30 100 300 1000 Single pulse TC=25˚C t=10ms t=1st=100ms ICP IC Collector to emitter voltage VCE (V) Collector current IC (A)
Rth(t) t 10–1 102 104 103 10–4 10410310210110–110–210–3 free air Time t (s) Thermal resistance Rth(t) (˚C/W)
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