C35D

C35 NJSEMI | Alldatasheet

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^s.mi-Conauctoi ^Pioaacti, Dna. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. C35 SERIES TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 525. Rating Peak Repetitive Forward and Reverse Blocking Voltage (1) (Tc = -65 to +125°C) C35U C35F C35A C35G C35B C35H C35C C35D C35E C35M C35S C35N Symbol VDRM or VRRM Value 100 150 200 250 300 400 500 600 700 800 Unit Volts MAXIMUM RATINGS — continued (Tj = 126°C unless otherwise noted.) Rating RMS On-State Current (All Conduction Angles) Peak Non-Repetitive Surge Current (One cycle. 60 Hz) Circuit Fusing (t = 1 to 8.3 rns) Peak Gate Power Average Gate Power Peak Reverse Gate Voltage Operating Junction Temperature Range Storage Temperature Range Symbol 'TIRMS) ITSM |2t PGM PGIAVI VGRM TJ Tstg Value 225 0.5 -65 to +125 -65 to -(-150 Unit Amps Amps A2s Watts Watt Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max RfiUC I 1-7 Unit "C/W NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets ore currenl before placing orders. Quality Semi-Conductors

ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted.) Characteristic

• Peak Forward Blocking Current (Vp = R«ed VDRVI @ TC = + 125°C) C35U.FAG C35B C35H C35C C35D C35E C35M C35S C35N (VD = Rated VDRM @ TC = 125°C) • All Devices Peak Reverse Blocking Current IVR = Rated VRRM @ TC = +125°C) C35U.FAG C35B C35H C36C C35D C35E C35M C35S C35N (Vp f Rated VRRM @ Tc = 125°C) All Devices Peak On-Stata Voltage HTM = 50.3 A peak, Pulse Width £ 1 ms. Duty Cycle « 2%) Gate Trigger Current, Continuous dc . (VD = 12 vdc, RL = so ni (VD = 12 vdc, RL = 50 n, TC = -65°o Gate Trigger Voltage, Continuous dc (Vp = 12 vdc, RL = so n, TC = -es-c to + i25°ci <VD - Rated VDRM, RL = 1000 n, TC = 125°C) Holding Current (VD = 24 Vdc, Gate Supply = 10 V, 20 n, 45 fjs minimum pulse width. If = 0.5 A) Critical Rate of Rise of Forward Blocking Voltage <VD = Rated VDRM, TC = +12B°C) C35U,F,M,S,N C35A,G,B,H C35C,D,E Symbol IDRM or !RRM IDRMIAV) or IRRM(AV) VTIM IGT VGT IH dv/dt Min 0.25 Typ Mix 4.5 6.5 5.5 2.5 2.25 100 Unit mA MA mA MA Volts mA Volts mA V//1S