C3507

2SC3507 PANASONIC | Alldatasheet

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Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol V CBO V CES V CEO V EBO ICP IC IB PC Tj Tstg Ratings 1000 1000 800 150 –55 to +150 Unit V V V V A A A W TC =25°C Ta=25°C 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching n Features l High-speed switching l High collector to base voltage VCBO l Satisfactory linearity of foward current transfer ratio hFE l Full-pack package which can be installed to the heat sink with one screw n Absolute Maximum Ratings (TC =25˚C) n Electrical Characteristics (TC =25˚C) Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol I CBO IEBO V CEO(sus)* hFE V CE(sat) V BE(sat) fT ton tstg tf Conditions V CB = 1000V , IE = 0 V EB = 7V , IC = 0 IC = 0.5A, L = 50mH V CE = 5V , IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A V CE = 5V , IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = –1.2A, V CC = 250V min 800 typ max 1.5 1.5 2.5 0.5 Unit mA mA V V V MHz ms ms ms *V CEO(sus) Test circuit X L 50mH 15V1W Y G 120W 50/60Hz mercury relay Unit: mm 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) 15.0–0.3 21.0–0.516.2–0.5 12.5 Solder Dip 3.5 0.715.0–0.2 5.0–0.2 11.0–0.2 10.9–0.5 5.45–0.3 321 1.1–0.1 2.0–0.2 0.6–0.2 2.0–0.1 f3.2–0.1 3.2

PC —T a I C —V CE V CE(sat)—I C V BE(sat)—I C hFE —I C fT —I C ton, tstg, tf — IC Area of safe operation (ASO) 0 150 12510025 75 50 100 (1) (2) (3) (1) TC =Ta (2) With a 100 · 100 · 2mm Al heat sink (3) Without heat sink (PC =3W) Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 TC =25˚C 200mA 100mA 20mA 300mA 400mA 500mA IB=800mA Collector to emitter voltage VCE (V) Collector current IC (A) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=5 –25˚C 25˚C TC =100˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.01 0.03 0.1 0.3 100 IC /IB=5 TC =–25˚C 25˚C 100˚C Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 TC =100˚C 25˚C –25˚C VCE =5V Collector current IC (A) Forward current transfer ratio hFE 0.01 0.1 1 100.03 0.3 3 0.1 0.3 100 300 1000 VCE =5V f=1MHz T C =25˚C Collector current IC (A) Transition frequency fT (MHz ) 08 26 4715 3 0.01 0.1 0.03 0.3 tstg tf ton Pulsed tw =1ms Duty cycle=1% I C /IB=5 (2IB1=–IB2) VCC =250V TC =25˚C Collector current IC (A) Switching time ton,tstg,tf (ms) 1 10 100 10003 30 300 0.01 0.03 0.1 0.3 100 Non repetitive pulse TC =25˚C ICP IC t=1ms 10ms DC Collector to emitter voltage VCE (V) Collector current IC (A)

Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit R th(t)—t 10–4 1010–3 10–110–2 11 0 3102 104 10–1 102 103 (1) (2) (1) PT=10V · 0.3A (3W) and without heat sink (2) PT=10V · 1.0A (10W) and with a 100 · 100 · 2mm Al heat sink Time t (s) Thermal resistance Rth(t) (˚C/W) 0 1600400 1200800 1400200 1000600 Lcoil=100µH IC /IB=5 (2IB1=–IB2) TC =125˚C ICP IC Collector to emitter voltage VCE (V) Collector current IC (A) L coil ICIB1 Vin tW –IB2 Vclamp VCC T.U.T