2SC3460 SANYO | Alldatasheet
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« High breakdown voltage and high reliability. . Fast switching speed (te: O.tps typ.) « Wide ASO. + Adoption of MBIT process. Absolute Maximum Ratings at Ta=25°C unit | Collector-to-Base Voltage Voso 1100 OV Collector -to-Emitter Voltage Voro 800 V Emitter-to-Base Voltage VER 7 OV Collector Current Ig 6 oA Peak Collector Current iop PwS300ps,Duty Cyc1e$10% 20 A Base Current Ip 3 )0=«<A Collector Dissipation Po Tp=25°C 100 ~oW Junction Temperature Tj 150 °% Storage Temperature Tstg -55 to +150 Electrical Characteristics at Ta=25°C min typ max unit Collector Cutoff Current. Topo Vop=800V,Ip=0 10° pA Emitter Cutoff Current Ippo Vppe5V, 120 10 pA DC Current Gain hpE(1) Voge5V,Ic=0. 4A 10® 4o® bpp(2) Vog=5V,Ig=2A 8 Gain-Bandwidth Product fr Vogt l0V,1g=0.4A 15 MHz Output Capacitance Cop Vopel0V, f=1MHz 120 PF C-E Saturation Voltage VoR(sat) I=34,1p50.6A 2.0 Vv B-E Saturation Voltage VeE(sat) Ig=3A,Ip=0.6A 1.5 Vv C-B Breakdown Voltage VcBR)CBO IgetmA, Pp0 1100 v C-E Breakdown Voltage V(pryceo Zc=5™4; Ryg=0o 800 v E-B Breakdown Voltage V(BR)EBO Ip=tmA,Ig=0 7 v C-E Sustain Voltage Vorx(sus)1¢=34 800 Vv Ipja-Tpo=0.6A, ie lnn, btamped Turn-On Time ton cec=#O0v, 0.5 ps Storage Time tstg Es 2-2. 5I po=Io=4a,| 3.0 ps Fall Time tr Ry 400ohms ° 0.30 ps *: The hpp 4) of the 2803460 is Package Dimensions 2022 . classifidd as follows. When (unit: mm) mo specifying the hpe(4) rank, |, 10 specify two ranks or more in ° SF Ts » . principle. 4a [12 a its jo K 20] 15 L 30[ 20 M 40] 0 a no —| H . ‘ E: Emitter wee ye ‘ Cs Collector « B; Base we ee eee SANYO: TO3PB SANYO Electric Co.,Ltd. Semiconductor Business Headquarters . TOKYO OFFICE Tokyo Bidg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN ‘ 4237A¥/3085KI/DO5UKI,TS No. 1594-1/3
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Dor < 2 4 aq ms 2 fine preet+tt{ | NAT 3, 7 i ; i & pene | es ee Soy iy veo=pw ot] sas ee ee a a co: a 1 706 i Collector-to-Emitter Voltage, V, -Vv Collector-to-Emitter Voltage,Va, - V CE CE °C ene ™ a. ° TTT] To=25°C = a SS * 400 ~ Se “CNC = = : Sw = a Ne a [TTT TTT? PT ttre rt & on a a Os a | | | Gy | oO [7 a G elt Pea 3 eo INe , a 7ttrr yer Po 3 rifts) 60,1 | a 20 ee Ne pps EN “| 3 20 nN Pore CN & in ee 8 4 N 2 or 10 10 1 1000 oO ~ iH 9) Co Too TH Ta %O s Tine,t - ms Ambient Temperature,Ta - °C z No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the ike, the failure of which may directly or indirectly cause injury, death or property loss, ] M Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. W Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, No. 1594-3/3