H3203 KISEMICONDUCTOR | Alldatasheet
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█ APPLICATIONS HIGH CURRENT APPLICA TIONS. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage 35 V IC=100μA, I E=0 BVCEO Collector-Emitter Breakdown V oltage 30 V IC=10mA, I B=0 BVEBO Emitter-Base Breakdown V oltage 5 V IE=1mA，IC=0 HFE（1） DC Current Gain 100 320 VCE=1V , IC=100mA HFE（2） DC Current Gain 35 VCE=1V , IC=700mA VCE(sat) Collector- Emitter Saturation V oltage 0.5 V IC=500mA, IB=20mA VBE Base-Emitter V oltage 05 0.8 V VCE=1V , IC=10mA ICBO Collector Cut-off Current 100 nA VCB=35V , IE=0 IEBO Emitter Cut-off Current 100 nA VEB=5V , IC=0 fT Current Gain-Bandwidth Product 120 MHz VCE=5V , IC=10mA Cob Output Capacitance 13 pF VCB=10V , IE=0，f=1MHz █ HFE Classification O Y 100—200 160—320 1―Emitter，E 2―Collector，C 3―Base，B TO-92 C3203 NPN S I L I C O N T R A N S I S T O R