2SC3149 SANYO | Alldatasheet
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Ordering number: EN _ 1068C . No.1068C / 2SC31 49 : i SANYO / NPN Triple Diffused Planar Silicon Transistor / For SWITCHING REGULATORS Oe Features eee + High breakdown voltage(Vopq2900V). ' . Fast switching speed. | + Wide ASO, i Absolute Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Voso 900 v Collector-to-Emitter Voltage Vong 800 v Emitter -to-Base Voltage Vepo 7 v Collector Current Ig 1.5 A Peak Collector Current top PwS300us, 5 A Duty Cycles10% Base Current Ip 0.8 A Collector Dissipation Pe Te=25°C 4o OW Junction Temperature Tj 150 °C Storage Temperature Tstg ~55 to +150 °% ; Electrical Characteristics at Ta=25°C min typ max unit: Collector Cutoff Current Icpo Vopr800V,I,=0 10 pA Emitter Cutoff Current Tap Vpp=5V,I¢=0 10 pA DC Current Gain npett) Vogz5V, 150.14 40# 4o* hpg(2) — Vog=5V, 1020.58 8 Gain-Bandwidth Product fp Vopr 10V,Ip=0.1A 15 MHz Output Capacitance Cop Voge l0V, f=1MHz 30 pF C-E Saturation Voltage VoR(sat) 1¢=0.75A,Ip=0. 158 2.0 v B-E Saturation Voltage VpR(sat) Ig=0.75A,1p=0.15A 1.5 V C-B Breakdown Voltage V¢BR)CBO Tp=1mA,T,=0 900 Vv C~E Breakdown Yoltage Vopryceo Ic=5m4,R_p=co 800 Vv E-B Breakdown Voltage Vipr)EpO Zg=1mA,I¢=0 7 v C-E Sustain Voltage Voro(sus) Zc=1+54,L=tmH,Zp=0.58 800 v C-E Sustain Voltage Vorx(sus) 1g20.5A,Ipy=0. 1h 800 Vv raps Ipot-0. 1A, L=5mH, clamped C-E Sustain Voltage Vorx(s Ig=0.25A,1p4=0.05A, 900 Vv GBFS9°) TC 3-0, 0587L= 10H, clamped Continued on next page. *: The h, of the 28C3149 is _ 1 : classified as follows. When Caetnde Dinensions 2010A specifying the her(1) rank, . a specify two ranks or more in Fess} 0 =o principle. TT oo Ey 3 |D Eee 10 K 20 | 15 L 30 | 20 M 40 iu Fo toss? tf" I Bi i E: Emitter ; : | 18.0 C: Collector : “I sEDEC: TO-2200B Bs Base i ‘ EIAJ : SC-46 ; SANYO Electric Co.,Ltd. Semiconductor Business Headquarters . TOKYO OFFICE Tokyo Bidg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN . *5137K1/2125MW ,TS No. 1068-1/3
28€3149 Continued from preceding page. min typ max unit . Turn-ON Time t To=1A,Ip4=0.2A,Ip5=-0.4A 1.0 ps on (er cNodobibs, gg BBV , Storage Time tstg " " 3.0 ps Fall Time te " " 0.7 ps Switching Time Test Circuit Se es met rs PP ° VR 3 400 ad ov _ Unit (Resistance : , Capacitance :F)
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a 10] 3 o1| 1c 5IB1=—SIp2 ari 3 NI 8} —199=80.38 T0515) Ct 4 Single pulse ae & 4 N . a a a eo Collector-to-Emitter Voltage,Vop - V Ambient Temperature,Ta - °C MNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. M@ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTO,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. WM Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Se No. 1068-3/3