C30619 PERKINELMER | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • 0.5, 1.0, 2.0, and 3.0 mm diameters
  • High responsivity from 850 nm to 1550 nm
  • High shunt resistance, low dark current
  • TE-cooled package options
  • Low capacitance for fast response times

Applications

  • Power meters
  • Fiber identifiers
  • Laser burn-in racks
  • Near infrared instrumentation
  • F .T .I.R. spectroscopy

TE-Cooled Devices: Large-area detectors are available mounted on a 1-stage or 2-stage thermoelectric (TE) cooler. Cooling increases shunt resistance (see Figure 2) thereby reducing noise for increased sensitivity. Typical detector temperature is -10°C with a 1-stage TE cooler or -35°C using a 2-stage cooler. ATE-cooler option can be specified by adding the extension -TC (1-stage cooler) or -DTC (2- stage cooler) to the standard part number (see ordering guide). More information is available from the "TC-Series Cooled Photodiodes" datasheet from PerkinElmer Optoelectronics Canada. Specifications (at VR = VOP (typical), 22°C) Parameter C30619 C30641 Units Min Typ Max Min Typ Max Active Diameter 0.5 1.0 mm Responsivity At 850 nm 0.10 0.20 0.10 0.20 A/W At 1300 nm 0.80 0.90 0.80 0.90 A/W At 1550 nm 0.85 0.95 0.85 0.95 A/W Shunt Resistance (VR= 10 mV) 1 10 250 5 50 MΩ Dark Current 1 20 5 50 nA Capacitance At VR= 0V 20 25 100 125 pF At VR= VOP 81 0 4 05 0 p F Bandwidth (-3 dB, RL= 50Ω) 350 75 MHz Linearity 2 > +13 > +13 dBm Available package types D2, D14 D2, D14 - Operating Ratings Parameter C30619 C30641 Units Min Typ Max Min Typ Max Operating Voltage 0 5 10 0 2 5 V Breakdown Voltage 20 80 20 80 V Maximum Forward Current 10 10 mA Maximum Photocurrent 100 100 mA Power Dissipation 100 100 mW Storage Temperature -60 125 -80 125 °C Operating Temperature -40 85 -40 85 °C Note 1. Selected higher shunt resistance devices are available to special order. Note 2. Maximum optical power level for < ±0.04 dB (±1%) responsivity variation under 1300 nm CW illumination, at VR= VOP(typ). Detector and Pre-Amplifier: Large-area InGaAs detectors are also available integrated with a preamplifier and TE-cooler. The HTE-series features large-area InGaAs detectors with a high gain hybrid transimpedence amplifier mounted on a 2-stage TE cooler. TE-cooling maximizes sensitivity and stabilizes op-amp offset and output characteristics. This provides an easy-to-use high sensitivity detector platform optimized for good temperature stability over a wide operating temperature range. More information is available from the HTE-series datasheet. The standard HTE-2642 incorporates a C30642E chip. C30619, C30641, C30642, C30665

Note 1. Selected higher shunt resistance devices are available to special order. Note 2. Maximum optical power level for < ±0.04 dB (±1%) responsivity variation under 1300 nm CW illumination, at VR= VOP(typ).

All values are nominal; specifications subject to change without notice. is a registered trademark of PerkinElmer, Inc.

22001 Dumberry Road,

Figure 9. Package D15: TO-5 with Glass Window.