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Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content

Features

  • High Speed Switching with Low Capacitances
  • High Blocking Voltage with Low RDS(on)
  • Easy to Parallel and Simple to Drive
  • Resistant to Latch-Up
  • Halogen Free, RoHS Compliant Benefits
  • Higher System Efficiency
  • Increased System Switching Frequency
  • Reduced Cooling Requirements
  • Increased System Reliability

Applications

  • Auxiliary Power Supplies
  • Switch Mode Power Supplies Package TO-247-3 Part Number Package C2M1000170D TO-247-3 VDS 1700 V I D @ 25˚C 4.9 A RDS(on) 1.0 Ω Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note IDS (DC) Continuous Drain Current 4.9 A VGS = 20 V, TC = 25 °C Fig. 14

3.0 VGS = 20 V, TC = 100 °C

IDS (pulse) Pulsed Drain Current 5.0 A Pulse width tP limited by Tjmax TC = 25 °C Fig. 16 VGS Gate Source Voltage -10/+25 V Ptot Power Dissipation 69 W TC=25 °C, TJ = 150 °C Fig. 13 TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C 1.6 mm (0.063”) from case for 10s Md Mounting Torque 1 8.8 Nm lbf-in M3 or 6-32 screw

C2M1000170D Rev. A Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 2.0 2.4 V VDS = VGS, ID = 100 μA Fig. 9 1.4 1.8 V VDS = VGS, ID = 100 μA TJ = 150 °C IDSS Zero Gate Voltage Drain Current nA VDS = 1700 V, VGS = 0 V

100 VDS = 1700 V, VGS = 0 V TJ=150 °C

IGSS Gate-Source Leakage Current 20 nA VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 0.95 1.1 Ω VGS = 20 V, ID = 2 A Fig. 6, 7, 82.1 2.9 VGS = 20 V, ID = 2 A, TJ = 150 °C gfs Transconductance 0.9 S VDS= 20 V, IDS= 2 A Fig. 5

0.8 VDS= 20 V, IDS= 2 A, TJ = 150 °C

Ciss Input Capacitance 191 pF VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV Fig. 12Coss Output Capacitance 12 Crss Reverse Transfer Capacitance 1.3 Eoss Coss Stored Energy 6.0 μJ Fig 10 td(on)v Turn-On Delay Time 9 ns VDD = 1000 V, VGS = -5/20 V ID = 2 A RG(ext) = 0 Ω, RL = 40 Ω Timing relative to VDS Fig. 7 trv Rise Time 46 td(off)v Turn-Off Delay Time 15 tfv Fall Time 9 RG Internal Gate Resistance 24.8 Ω f = 1 MHz, VAC = 25 mV, ESR of CISS Built-in SiC Body Diode Characteristics Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 1.7 1.8 °C/W Fig. 15 Gate Charge Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note Qgs Gate to Source Charge 2.7 nC VDS = 1000 V, VGS = -5/20 V ID = 1 A Per JEDEC24 pg 27 Fig. 18Qgd Gate to Drain Charge 5.4 Qg Gate Charge Total 13

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc.7 C2M1000170D Rev. A Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Package Dimensions Package TO-247-3 Recommended Solder Pad Layout TO-247-3 (1) (2) (3) POS Inches Millimeters Min Max Min Max A .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC N 3 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 Part Number Package Marking C2M1000170D TO-247-3 C2M1000170D