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Document overview

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Technical content

Features

  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High blocking voltage with low On-resistance
  • High speed switching with low capacitances
  • Easy to parallel and simple to drive
  • Halogen Free, RoHS compliant Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency

Applications

  • 1500V Solar Inverters
  • Switch Mode Power Supplies
  • High voltage DC/DC Converters
  • Capacitor discharge Package Part Number Package Marking C2M0080170P TO-247-4 Plus C2M0080170P VDS 1700 V I D @ 25˚C 40 A RDS(on) 80 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage -5/+20 V Static Note: 2 ID Continuous Drain Current A VGS = 20 V, TC = 25˚C Fig. 19

27 VGS = 20 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 80 A Pulse width tP limited by Tjmax Fig. 22 PD Power Dissipation 277 W TC=25˚C, TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Note (1): When using MOSFET Body Diode VGSmax = -5V/+25V Note (2): MOSFET can also safely operate at 0/+20V D TAB Drain 2 3 4 S S G Drain (Pin 1, TAB) Power Source (Pin 2) Driver Source (Pin 3) Gate (Pin 4)

C2M0080170P Rev. A, 05-2018 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 2.0 2.6 4 V VDS = VGS, ID = 10 mA Fig. 11

2.0 V VDS = VGS, ID = 10 mA, TJ = 150ºC

IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1700 V, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 80 125 mΩ VGS = 20 V, ID = 28 A Fig. 4, 5, 6150 VGS = 20 V, ID = 28 A, TJ = 150ºC gfs Transconductance 9.73 S VDS= 20 V, IDS= 20 A Fig. 7

10.07 VDS= 20 V, IDS= 20 A, TJ = 150ºC

Ciss Input Capacitance 2250 pF VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV Fig. 17, 18Coss Output Capacitance 105 Crss Reverse Transfer Capacitance 4 Eoss Coss Stored Energy 65 μJ Fig. 16 EON Turn-On Switching Energy (SiC Diode FWD) 0.3 mJ VDS = 1200 V, VGS = -5/20 V, ID = 20A, RG(ext) = 2.5Ω, L= 200 μH, TJ = 150ºC, Using SiC Diode as FWD Fig. 26, 29bEOFF Turn Off Switching Energy (SiC Diode FWD) 0.1 EON Turn-On Switching Energy (Body Diode FWD) 1.1 mJ VDS = 1200 V, VGS = -5/20 V, ID = 20A, RG(ext) = 2.5Ω, L= 200 μH, TJ = 150ºC, Using MOSFET as FWD Fig. 26, 29aEOFF Turn Off Switching Energy (Body Diode FWD) 0.1 td(on) Turn-On Delay Time 25 ns VDD = 1200 V, VGS = -5/20 V ID = 20 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27 tr Rise Time 9 td(off) Turn-Off Delay Time 34 tf Fall Time 18 RG(int) Internal Gate Resistance 2 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 28 nC VDS = 1200 V, VGS = -5/20 V ID = 20 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 33 Qg Total Gate Charge 120 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.1 V VGS = - 5 V, ISD = 10 A Fig. 8, 9, 103.6 V VGS = - 5 V, ISD = 10 A, TJ = 150 °C IS Continuous Diode Forward Current 28 A TC = 25˚C, VGS = - 5 V Note 1 trr Reverse Recover time 36 ns VGS = - 5 V, ISD = 20 A, VR = 1200 V dif/dt = 2600 A/µs, TJ = 150 °C Note 1Qrr Reverse Recovery Charge 1 µC Irrm Peak Reverse Recovery Current 38 A Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.37 0.45 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40

C2M0080170P Rev. A, 05-2018 Package Dimensions Package TO-247-4L Plus BASE METAL SECTION "F-F", "G-G" AND "H-H" SCALE: NONE E E3 E4 TITLE: SHEET COMPANY ASE Weihai

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Engineering Weihai, Inc. PACKAGE OUTLINE ISSUE DATE DWG NO. TO-247 Plus 4 LD 98W0004TO005 May.20, 2016 A NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. MIN MILLIMETERS SYM MAX A b c D E e N L Q T W X 4.83 5.21 2.29 2.54 1.91 2.16 1.07 1.28 1.07 1.33 2.39 2.94 2.39 2.84 1.07 1.60 1.07 1.50 0.55 0.65 0.55 0.68 23.30 23.60 16.25 17.65 0.95 1.25 15.75 16.13 13.10 14.15 3.68 5.10 1.00 1.90 12.38 13.43

2.54 BSC

17.31 17.82 3.97 4.37 5.49 6.00 17.5° REF. 3.5 ° REF. 4° REF. e1 5.08 BSC 2.692.39b5 b6 2.39 2.64 L2 2.35 2.65 TITLE: SHEET COMPANY ASE Weihai

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Engineering Weihai, Inc. PACKAGE OUTLINE ISSUE DATE DWG NO. TO-247 Plus 4LD 98W0004TO005 A May.20, 2016

C2M0080170P Rev. A, 05-2018 Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree repre- sentative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • C2M PSPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support