C2M0080120D CREE | Alldatasheet

Document overview

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Technical content

Features

  • High Speed Switching with Low Capacitances
  • High Blocking Voltage with Low RDS(on)
  • Easy to Parallel and Simple to Drive
  • Avalanche Ruggedness
  • Resistant to Latch-Up
  • Halogen Free, RoHS Compliant Benefits
  • Higher System Efficiency
  • Reduced Cooling Requirements
  • Increased System Switching Frequency

Applications

  • Solar Inverters
  • High Voltage DC/DC Converters
  • Motor Drives
  • Switch Mode Power Supplies
  • UPS Package TO-247-3 Part Number Package C2M0080120D TO-247-3 VDS 1200 V I D @ 25˚C 31.6 A RDS(on) 80 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note IDS (DC) Continuous Drain Current 31.6 A VGS@20 V, TC = 25˚C Fig. 16

20 VGS@20 V, TC = 100˚C

IDS (pulse) Pulsed Drain Current 80 A Pulse width tP = 50 μs duty limited by Tjmax, TC = 25˚C VGS Gate Source Voltage -10/+25 V Ptot Power Dissipation 208 W TC=25˚C Fig. 15 TJ , Tstg Operating Junction and Storage Temperature -55 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Md Mounting Torque 1 8.8 Nm lbf-in M3 or 6-32 screw

C2M0080120D Rev. A Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 1.7 2.2 V VDS = 10V, ID = 1 mA Fig. 8

3.2 VDS = 10V, ID = 10 mA

1.2 1.7 V VDS = 10V, ID = 1 mA, TJ = 150ºC TBD VDS = 10V, ID = 10 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1200 V, VGS = 0 V 10 250 VDS = 1200 V, VGS = 0 V TJ = 150ºC IGSS Gate-Source Leakage Current 0.25 μA VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 80 98 mΩ VGS = 20 V, ID = 20 A Fig. 6 150 208 VGS = 20 V, ID = 20A, TJ = 150ºC gfs Transconductance 9.8 S VDS= 20 V, IDS= 20 A Fig. 4

8.5 VDS= 20 V, IDS= 20 A, TJ = 150ºC

Ciss Input Capacitance 950 pF VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV Fig. 13, 14Coss Output Capacitance 80 Crss Reverse Transfer Capacitance 6.5 Eoss Coss Stored Energy 40 μJ Fig. 12 td(on)v Turn-On Delay Time 12.0 ns VDD = 800 V, VGS = 0/20 V ID = 20 A RG(ext) = 0 Ω, RL = 40 Ω Timing relative to VDS Fig. 20 tfv Fall Time 18.4 td(off)v Turn-Off Delay Time 23.2 trv Rise Time 13.6 RG Internal Gate Resistance 4.6 Ω f = 1 MHz, VAC = 25 mV Built-in SiC Body Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 3.3 V VGS = -5 V, IF=10 A, TJ = 25 ºC

3.1 VGS = -2 V, IF=10 A, TJ = 25 ºC

trr Reverse Recovery Time 40 ns VGS = -5 V, IF=20 A, TJ = 25 ºC VR = 800 V, diF/dt= 350 A/μs Qrr Reverse Recovery Charge 165 nC Irrm Peak Reverse Recovery Current 6.4 A Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.60 0.65 K/W Fig. 17RθCS Case to Sink, w/ Thermal Compound TBD RθJA Thermal Resistance From Junction to Ambient 40 Gate Charge Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note Qgs Gate to Source Charge 10.8 nC VDS = 800 V, VGS = 0/20 V ID =20 A Per JEDEC24 pg 27 Fig. 28Qgd Gate to Drain Charge 18.0 Qg Gate Charge Total 49.2

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems, or weapons systems. Copyright © 2013 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks and Z-REC and Z-FET are trademarks of Cree, Inc.9 C2M0080120D Rev. A Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power Package Dimensions Package TO-247-3 Recommended Solder Pad Layout TO-247-3 (1) (2) (3) POS Inches Millimeters Min Max Min Max A .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC N 3 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 Part Number Package Marking C2M0080120D TO-247-3 C2M0080120