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Document overview

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Technical content

Features

  • Optimized package with separate driver source pin
  • 8mm of creepage distance between drain and source
  • High Blocking Voltage with Low On-Resistance
  • High Speed Switching with Low Capacitances
  • Easy to Parallel and Simple to Drive
  • Halogen Free, RoHS Compliant Benefits
  • Reduce switching losses and minimize gate ringing
  • Higher system efficiency
  • Reduce cooling requirements
  • Increase power density
  • Increase system switching frequency

Applications

  • 1500V Solar Inverters
  • Switch Mode Power Supplies
  • High Voltage DC/DC converters
  • Pulsed Power Applications Package VDS 1700 V I D @ 25˚C 72 A RDS(on) 45 mΩ Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VDSmax Drain - Source Voltage 1700 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage (dynamic) -10/+25 V AC (f >1 Hz) Note: 1 VGSop Gate - Source Voltage (Static) -5/+20 V Static Note: 2 ID Continuous Drain Current A VGS =20 V, TC = 25˚C Fig. 19

48 VGS =20 V, TC = 100˚C

ID(pulse) Pulsed Drain Current 160 A Pulse width tP limited by Tjmax Fig. 22 PD Power Dissipation 520 W TC=25˚C, TJ = 150 ˚C Fig. 20 TJ , Tstg Operating Junction and Storage Temperature -40 to +150 ˚C TL Solder Temperature 260 ˚C 1.6mm (0.063”) from case for 10s Note (1): When using MOSFET Body Diode VGSmax = -5V/+25V Note (2): MOSFET can also safely operate at 0/+20V Part Number Package Marking C2M0045170P TO-247-4 Plus C2M0045170P Drain (Pin 1, TAB) Power Source (Pin 2) Driver Source (Pin 3) Gate (Pin 4) D TAB Drain 2 3 4 S S G

C2M0045170P Rev. -, 04-2018 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA VGS(th) Gate Threshold Voltage 2.0 2.6 4 V VDS = VGS, ID = 18mA Fig. 11

1.8 V VDS = VGS, ID = 18mA, TJ = 150 °C

IDSS Zero Gate Voltage Drain Current 2 100 μA VDS = 1700 V, VGS = 0 V IGSS Gate-Source Leakage Current 600 nA VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance 45 59 mΩ VGS = 20 V, ID = 50 A Fig. 4,5,690 VGS = 20 V, ID = 50 A, TJ = 150 °C gfs Transconductance 21.7 S VDS= 20 V, IDS= 50 A Fig. 7

24.4 VDS= 20 V, IDS= 50 A, TJ = 150 °C

Ciss Input Capacitance 3672 pF VGS = 0 V VDS = 1000 V f = 1 MHz VAC = 25 mV Fig. 17,18Coss Output Capacitance 171 Crss Reverse Transfer Capacitance 6.7 Eoss Coss Stored Energy 105 μJ Fig 16 EON Turn-On Switching Energy (SiC Diode FWD) 0.67 mJ VDS = 1200 V, VGS = -5/20 V, ID = 50A, RG(ext) = 2.5Ω, L= 105 μH, TJ = 150 °C, using SiC Diode as FWD Fig. 26, 29bEOFF Turn Off Switching Energy (SiC Diode FWD) 0.31 EON Turn-On Switching Energy (Body Diode FWD) 2.8 mJ VDS = 1200 V, VGS = -5/20 V, ID = 50A, RG(ext) = 2.5Ω, L= 105 μH, TJ = 150 °C, using MOSFET as FWD Fig. 26, 29aEOFF Turn Off Switching Energy (Body Diode FWD) 0.35 td(on) Turn-On Delay Time 35 ns VDD = 1200 V, VGS = -5/20 V ID = 50 A, RG(ext) = 2.5 Ω, Timing relative to VDS Inductive load Fig. 27, tr Rise Time 13 td(off) Turn-Off Delay Time 46 tf Fall Time 10 RG(int) Internal Gate Resistance 1.3 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 44 nC VDS = 1200 V, VGS = -5/20 V ID = 50 A Per IEC60747-8-4 pg 21 Fig. 12Qgd Gate to Drain Charge 57 Qg Total Gate Charge 188 Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note VSD Diode Forward Voltage 4.1 V VGS = - 5 V, ISD = 25 A Fig. 8, 9, Note 13.6 V VGS = - 5 V, ISD = 25 A, TJ = 150 °C IS Continuous Diode Forward Current 72 A TC= 25 °C, VGS = - 5 V Note 1 trr Reverse Recovery Time 44 ns VGS = - 5 V, ISD = 50 A , VR = 1200 V dif/dt = 3000 A/µs Note 1Qrr Reverse Recovery Charge 2 µC Irrm Peak Reverse Recovery Current 60 A Note (1): When using SiC Body Diode the maximum recommended VGS = -5V Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note RθJC Thermal Resistance from Junction to Case 0.22 0.24 °C/W Fig. 21 RθJC Thermal Resistance from Junction to Ambient 40

C2M0045170P Rev. -, 04-2018 Package Dimensions Package TO-247-4L Plus BASE METAL SECTION "F-F", "G-G" AND "H-H" SCALE: NONE E E3 E4 TITLE: SHEET COMPANY ASE Weihai

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Engineering Weihai, Inc. PACKAGE OUTLINE ISSUE DATE DWG NO. TO-247 Plus 4 LD 98W0004TO005 May.20, 2016 A NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. MIN MILLIMETERS SYM MAX A b c D E e N L Q T W X 4.83 5.21 2.29 2.54 1.91 2.16 1.07 1.28 1.07 1.33 2.39 2.94 2.39 2.84 1.07 1.60 1.07 1.50 0.55 0.65 0.55 0.68 23.30 23.60 16.25 17.65 0.95 1.25 15.75 16.13 13.10 14.15 3.68 5.10 1.00 1.90 12.38 13.43

2.54 BSC

17.31 17.82 3.97 4.37 5.49 6.00 17.5° REF. 3.5 ° REF. 4° REF. e1 5.08 BSC 2.692.39b5 b6 2.39 2.64 L2 2.35 2.65 TITLE: SHEET COMPANY ASE Weihai

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Engineering Weihai, Inc. PACKAGE OUTLINE ISSUE DATE DWG NO. TO-247 Plus 4LD 98W0004TO005 A May.20, 2016

C2M0045170P Rev. -, 04-2018 Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/ EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Notes Related Links
  • C2M PSPICE Models: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Isolated Gate Driver reference design: http:/ /wolfspeed.com/power/tools-and-support
  • SiC MOSFET Evaluation Board: http:/ /wolfspeed.com/power/tools-and-support