2SC2878 TOSHIBA | Alldatasheet

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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS Unit in mm 5.1 MAX. e High Emitter-Base Voltage : Vppo=25V (Min.) r @ = High Reverse hrg : Reverse hpg=150 (Typ.) 2 (VoR=—2V, I¢=—4mA) 0.45 a + 0.55 MAX. a @ Low On Resistance : Ron=10 (Typ.) @g=5mA) ous 2 2 MAXIMUM RATINGS (Ta = 25°C) 1.27 4.27 CHARACTERISTIC SYMBOL UNIT Fy Lan Collector-Base Voltage VcBO Gr) 7 Collector-Emitter Voltage VCEO Emitter-Base Voliage VEBO Collector Current [io [300 | ma] 1 are [Base Current | CT 60 | m 3. BASE Collesior Power Dissipation [Pg [40] Storage Temperature Range —55~125 EIAJ SC-43 TOSHIBA 2-5F1B Weight : 0.21g 961001EAA @ TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or ‘other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 1998-12-17 1/4

ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector CutoiF Current | Tong |Vop=s0v,g=0 ‘| — | — | 01] aa femitter Cut-off Current | Igp0 _[VEB=25V, I¢=0 ——*(| — | — | 04 | pA | FDC Current Gain [bps (Note) |VeR=2V, Io=amA | 200 | — [1200] Collector-Emitter Saturation _ _ a oe fBase-Bimitter Vonage | Vap _[Von=3V,Ig=amA | — | om — | V1 [Transition Frequency | fy |Vcp=6V,I¢=4mA | — | 30 | — | Mie] Collector Output Capacitance Vcp=10V, In=0, f=1MHz [| — | 48] 7]| pF | , OUTPUT INPUT a S | - [| - | Switching . 10V Ha a Time Storage Time | tstg 0 {1 wo] ” 500 ms les VBB_ Vcc Fall Ti =-3V =12V L an ome tt DUTY CYCLE<2% 30 (Note) : hyp Classification A: 200~700, B : 350~1200 1998-12-17 2/4

TOSHIBA 2S$C2878 +50 Ic = VCE “40 Ic - VCE (REVERSE REGION) ete ee € «fh a BL “ = To o Cee Te e - LEFT] tet > a , ete ol ; “eOoRercr joe ese eee HRS PRR § Ces angen

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Lit te} ier Ai titi ti tt | 0 -2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE Vcg (V) COLLECTOR-EMITTER VOLTAGE Vcg (V) hrg - Ic VCE (sat) — IC oe FLL common emrren 0 common ewirter SA = sos EE HTT connos ere Sere A ail ease: Vogeav 3g Sm) Tanase cit | g anos — 25 TH ST eS be FCC) ee 8 vol reef erent fees | 5S see coast meastitieeel sop yd 2 ERIC et 4 cs oe —— O1 03 1 3 10 30 100 = 300 COLLECTOR CURRENT Ic (mA) COLLECTOR CURRENT Ig (mA) Ic — VBE 300, 2 fom TM) g wpe I EMITTER / = soo) common emirrer © | vee=2¥ LA 2 TTT TT ver=6v ,™ TT Te B rT ELIA p10 g Bo is) | | [nerooe/ ff] | | | =e gi i 3 100 H 2 LLU Pn ett i7AeL EL) 2 Lee

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1 |Z LL 2 Sead oO ZL/| Fy a 004 08a ioe 180 8100 BASE-EMITTER VOLTAGE Vpg (V) COLLECTOR CURRENT Ic (mA) 1998-12-17 3/4

TOSHIBA (282878 Cob - VCB Ron - Ip 3 : = : ee a Saat | cuit} AAA 2 ze ow NUIT eg .===25 SS 38 Seca ad oe Se or FS Ee EE PY SNE pial z CAA e PTT TSS § ci ee 3 3 = ae

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0.3 1 3 10 30 0.01 0.03 OL 03 1 3 10 COLLECTOR-BASE VOLTAGE Vop (V) BASE CURRENT Ip (mA) Po - Ta 500, , PEE S$ oop ttt titty tty é [INET TTT

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AMBIENT TEMPERATURE Ta (°C) 1998-12-17 4/4