2SC2851 PANASONIC | Alldatasheet
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Silicon NPN epitaxial planer type For high-frequency power amplification n Features l High transition frequency fT. l Output of 0.6W is obtained in the VHF band (f = 175MHz). n Absolute Maximum Ratings (Ta=25˚C) Unit: mm Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature 1:Emitter 2:Collector 3:Base EIAJ:SC–51 TO–92L Package 5.9–0.2 2.54–0.15 0.7–0.1 4.9–0.2 8.6–0.2 0.7 +0.3 –0.2 13.5–0.53.2 0.45 +0.2 –0.1 1.271.27 0.45 +0.2 –0.1 13 2 Symbol V CBO V CEO V EBO ICP IC PC Tj Tstg Ratings 0.5 0.3 150 –55 ~ +150 Unit V V V A A W n Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Forward current transfer ratio Transition frequency Collector output capacitance High-frequency output Overall efficiency Symbol I CBO hFE fT C ob PO * h Conditions V CB = 20V , IE = 0 V CE = 13.5V , IC = 100mA V CB = 10V , IE = –100mA, f = 200MHz V CB = 10V , IE = 0, f = 1MHz V CC = 13.5V , Pi = 0.03W, f = 175MHz V CC = 13.5V , Pi = 0.03W, f = 175MHz min 1.5 0.6 typ 0.9 max Unit mA GHz pF W *Refer to the PO measurment circuit
1.6 1.2 0.4 1.0 1.4 0.8 0.2 0.6 Ambient temperature Ta (˚C) Collector power dissipation PC (W ) 01 2 10826 4 160 120 100 140 Ta=25˚C 3.5mA 3.0mA 2.5mA 2.0mA 1.5mA 1.0mA 0.5mA IB=4.0mA Collector to emitter voltage VCE (V) Collector current IC (mA ) 400 300 100 250 350 200 150 VCE =13.5V Ta=25˚C Base to emitter voltage VBE (V) Collector current IC (mA ) PC — Ta I C — V CE IC — V BE Input 50W 47W 20pF 30pF 30pF 30pF 25pF 15pF 15pF 30pF RFC1 RFC2 1000pF 0.0025pF Output 50W Circuit constants L1: f2mm silver plated copper wire, 0.5T, D = 15 L2: f1.5mm silver plated copper wire, 2T, D = 15 RFC1: f1.0mm enameled, 15T, D = 7 RFC2: f1.5mm silver plated copper wire, 5T, D = 8 The high-frequency output measurement circuit at 175MHz
V CE(sat) — IC hFE — IC fT — IE C ob — V CB Po — Pi 0.001 0.003 0.01 0.03 0.1 0.3
10 IC /IB=5
Ta=25˚C Collector current IC (A) Collector to emitter saturation voltage VCE(sat) (V) 1 10 100 10003 30 300 160 120 100 140 VCE =13.5V Ta=25˚C Collector current IC (mA ) Forward current transfer ratio hFE 4.0 3.0 1.0 2.5 3.5 2.0 0.5 1.5 VCB =10V Ta=25˚C Emitter current IE (mA ) Transition frequency fT (GHz ) 1 3 10 30 100 IE=0 f=1MHz Ta=25˚C Collector to base voltage VCB (V) Collector output capacitance Cob (pF) 0 200 16040 120 80 2.0 1.6 1.2 0.8 0.4 VCC =13.5V f=175MHz Ta=25˚C Input power Pi (mW ) Output power Po (W )