2SC2792 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE INDUSTRIAL APPLICATIONS SWITCHING APPLICATIONS. Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS. shii02 g oe} 4 e Excellent Switching Times (I¢ =0.5A) x) OTe § tr=1.0us Max. tp=1.0us Max. ll I EB FS be () a e High Collector Breakdown Voltage : VoRQ=800V | | y a 0, 2040.3 | 3 MAXIMUM RATINGS (Ta = 25°C) voids mi ES 5.05202 5.ast02 Collector-Base Voltage VoBo 433 | ai Colleetor-Emitver Voltage 2) ea po te Te Collector Current c £ 1. BASE 2. COLLECTOR (HEAT SINK) [Base Current | | tT A |] emer / wee Storage Temperature Range —55~150 Weight : 4.6g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION [an | rye. fatax. [une] Collector Cut-off Current Topo _|Vcp=800V, Ip=0 | — | — | 100] ya | fBmiuer Cutam Curent | Iwo _[Vep=7V.1o=0 | —| — | 1| mal Collector-Base Breakdown Voltage |V (BR) CBO|Ic=1mA, Ig=0 | 350] — | —]| v | Collector-Emitter Breakdown Iv Ic=10mA, Ip=0 800 v Voltage (BR) CEO fc=toma,ts-0 | am | — | — | v | Saturation Collector-Emitter | Von (sat) |Io=0.5A, Ip =0.05A | — | — | 10] v | Voltage Base-Emitter VBE (sat) [I¢=0.5A, Ip=0.05A | —[—] 15] v | 4 S a 1 © rn I BL B2 ipo Fall Time te 21p1= —Ip2=0.1A, 1.0 DUTY CYCLE=1% 961001eAA2 malfunction or fail due to thelr inherent electrical sens tty and wulneraiity to physical stress Is the responsibilty of the buyer, when utlizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ‘of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified Operating ranges as set forth in the most recent products specifications. Also, please keep in mind the. precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. 1997-09-01 1/2
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