2SC2782 TOSHIBA | Alldatasheet
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm @ Output Power : Po=80W (Min.) 184208 (f=175MHz, Vcc =12.5V, Pi=18W) E lil a 3| 3 ) {| Aes S| 21a se 3] gi Ne] a [Is s MAXIMUM RATINGS (Tc = 25°C) sesoal| || slals — a ee: HARACTERISTI ‘YMBOL | ranine | unrr | + 3 3} CHARACTERISTIC Ss 0. RATING | UN: a — cl Collector-Base Voltage Veso | 36 | V_| Serene CBE Collector-Emitter Voltage VCEO [ Emitter-Base Voltage Vepo | 4 =| V_ i oe Collector Current 1. EMITTER 4. EMITTER | Collector Power Dissipation | Po | 220 | We eee COLLECT Collector Power Dissipation Pc 220 WwW 3. BASE 8 COLLECTOR Storage Temperature Range —65~175 JEDEC = TOSHIBA 2-13C1A ELECTRICAL CHARACTERISTICS (Tc = 25°C) Weight : 5.5g CHARACTERISTIC SYMBOL | TEST CONDITION Collector-Base Breakdown Voltage BR) CBO|IC=20mA, In=0 | 36 | — | —| Vv] Collector-Emitter Breakdown Voltage |V (BR) CEO|Jc=50mA, Ip=0 [| i¢ | — | — |v] Emitter-Base Breakdown Voltage BR) EBO|IR=1mA, Ic=0 [ 4[/—][-—]v] [Output Power ———S~d SP =) [30 [so] — [Ww ] Voc=125V, f=175MHe| 64 | 68[ — | 4B | Collector Efficiency Pi=18W [ 60 [| 7o| — | % | win tenn na [tego [Late - | Series Equivalent Output Impedance feuemae Pessow | _ | tt — [a | * Pulse Test: Pulse Width=100ys, Duty Cycle<3% CAUTION Beryllia Ceramics is used in this product. The dust or vapor can be dangerous to humans. Do not break, cut, crush or dissolve chemically. Dispose of this properly according to law. Do not intermingle with normal industrial or domestic waste. Q61001EAA2 malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In ceveloping your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook 1998-07-17 1/2
Fig. Po TEST CIRCUIT Bi c Ly lg C4 po ZG=50: C6 Z,=500. RFC Ig °8 Co C5 2, wie Voc Cy~C4 : ~20pF C5 : 156pF (39pF x4) CERAMIC CONDENSER Cg : 132pF (33pF X 4) CERAMIC CONDENSER C7 : 0.014.F CERAMIC CONDENSER Cg : 10uF Lj, Lg: ¢1.5mm SILVER PLATED COPPER WIRE, 101D, 1T Lg : ¢1.5mm SILVER PLATED COPPER WIRE, 101D, 2T RFC : ¢lmm ENAMEL COATED COPPER WIRE, 61D, 10T FB : FERRITE BEAD Po, 70 — Pi Po —f = Voo=12.5V Te=25°C s é ee fe se FERS ef | lea |e es FA & 2 BL pee ete FE ES ee 4 eee
3 AI 60 3 i}
oe ti tithe Jt tt | 8 12 16 20 150 160 170 INPUT POWER Pi (W) FREQUENCY f (MHz) CAUTION These are only typical curves and devices are not necessarily guaranteed at these curves.
261001 EAA"
CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein iz subject to change without notice 1998-07-17 2/2