2SC2540 MITSUBISHI | Alldatasheet
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Technical content
MITSUBISHI RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
DESCRIPTION
2SC2540 is a silicon NPN epitaxial planar type transistor designed OUTLINE DRAWING Dimensions in mm for RF power amplifiers in VHF band mobile radio applications, mt a 6 FEATURES . Se © High power gain: Gpe 2 8.2dB Sl R3.2 JeleL [7] @Vec = 13.5V, Po = 40W, f = 175MHz q sta) VAS at. © Emitter ballasted construction and gold metallization for ey SS): BE high reliability and good performances. 2/¢3.2 YZ s|=| @ Low thermal resistance ceramic package with flange. H| sof lend © Ability of withstanding more than 20:1 load VSWR when ® +03] [503] leo operated at Voc = 15.2V, Po = 40W, f = 175MHz, To = 25°C. J.9+0.4/7.9+0.4 APPLICATION 30 to 35 watts output power amplifiers in VHF band mobile 01+0.95 ee, radio applications. ee tt ats Creer | ists g 25206 4 PIN: D COLLECTOR @ EMITTER (FLANGE) ® BASE ‘® EMITTER(FLANGE) © FIN (EMITTER) T-40E ABSOLUTE MAXIMUM RATINGS (to=25'¢ unis omerwite pois) a | veoo | cotectoriotaeworwe OT CdSCOC*C“‘ CR#SCSC*‘SCV(C*d eS Rees [tc | otiectoreunent ee | Tan 5 Po Collector dissipation [tevere 80 =< 175 [ sunctiontoamtiee Tew | wna Thermal resistance 2unetion to ambient c/w Note. Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (1c=25'C uniess otherwise specifies) 5 , 7 | La , ramares est condition i ribo a tione wee | “emeao| Coleciorwobase beakdownvele | tgmtmavieso S| S| CdSSC‘dSSC id Coltactor eutot eurent jYoa=iViieso es | ma | eso _|_ Emitter cutortcurent [veg=avitomo Te [ma [ree [ octowardcurentssine | Veemtoviignaza | 0 | eo | vo] — (| [as | tw 2 Voo=13.5V, Pin=6W, f=175MHz so] 7 Note. #Pulse test. Pw=150ys. duty=5%. Above parameters, ratings. iuls and conditions are subject to change NOV. ' 97 ¢ MITSUBISHI ELECTRIC
MITSUBISHI RF POWER TRANSISTOR 2SC2540 NPN EPITAXIAL PLANAR TYPE EEE OO Eee TEST CIRCUIT ter7sMuiz Zin=50Q to 110pF us Le to 110pF Zour=S09 . 100 68pF 10P to 50pF sor REG to S0pF to S0pF pF 100 =p 8 o *veed LI. Length = 10mm, width = 6mm, thickness = 0.3mm copper plate NOTES: Coits are made trom 1,5mme silver plated copper wire except L1 & L2 L2: Length = 10mm, width = 3mm, thickness = 0.3mm copper plate D: Inner diameter of coil FB: Ferrite bead T: Turn number of coil RFC: 0.4mm¢ enameled copper wire 17 turn P.: Pitch of coil Ca: 10uF, 1000pF, 150pF in parallel Dimension in mitii-meter TYPICAL PERFORMANCE DATA COLLECTOR DISSIPATION VS. COLLECTOR CURRENT VS. AMBIENT TEMPERATURE COLLECTOR TO EMITTER VOLTAGE 100 5 PTT TTT ery Ty [re=ese | LP foons TT] = tit ttt ty ra ree s FRET ITT TT s [titer ty
8 COS SCoo : (eae
[Re ST 2 re e NE 5 Peery TT a ee Po ers eee Nee a oor am NT] CLP rt ree] 0 a0 80 120 160 200 ( 4 8 12 16 20 AMBIENT TEMPERATURE Ta (°C) COLLECTOR TO EMITTER VOLTAGE Vee (V) COLLECTOR TO EMITTER BREAKDOWN VOLTAGE VS. DC CURRENT GAIN VS. BASE TO EMITTER RESISTANCE COLLECTOR CURRENT gS 6 0 : GS “Co 2 gh tttt th) IT [tga oo LOT TTT ver
8 LITT INT TTT pe SEER
gs of UT TN TT s oof HUT ATT ee LITT TAT TTT e LU er Fe of LTT IN TT 2 of eer TT TTT ae Gd 8 LAT e oi TT 8 of LT TTT
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. 2 »t Lt tt yy ao LUO TTT] oS "1 23 5 10 2030 50 100200 500 tk 0.702 05 1 23 5 10 203050 100 BASE TO EMITTER RESISTANCE Ree (2) COLLECTOR CURRENT Ic (A) NOV.'97 ° ¢ MITSUBISHI ELECTRIC
MITSUBISHI RF POWER TRANSISTOR 2SC2540 NPN EPITAXIAL PLANAR TYPE NPN EPITAXIAL PLANAR TYPE COLLECTOR OUTPUT CAPACITANCE VS. OUTPUT POWER, COLLECTOR COLLECTOR TO BASE VOLTAGE EFFICIENCY VS. INPUT POWER = 1000, 60 90 ee a 3 soo Dae tie] aaEee : Zh z $ et || TTT TTT z” Cert” = 2 | DORA 2 Cerys eof 2 OTT?
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a 8 JIA LPL. & 5 3 e tL TTT TT TT (ALLE, 8 1 23°55 710 2030 $070100 0 2 4 6 8 10 COLLECTOR TO BASE VOLTAGE Veg (Vv) INPUT POWER Pin (W) OUTPUT POWER VS. COLLECTOR SUPPLY VOLTAGE Or mase 4 mt z Sane ey He 2 “COD een 5 af LY eT a 7448208
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Cer] TT tT wot Titty Tt] 8 10 12 14 16 18 COLLECTOR SUPPLY VOLTAGE Vc (V) NOV. '97 MITSUBISHI are IBS!