2SA1011 SANYO | Alldatasheet
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Ordering number:EN 5446 | No544G 28A1011/28C2344 S. AYO PNP/NPN Epitaxial Planar Silicon Transistors i High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications ( ):2SA1011 Maximum Ratings at Ta=25°C unit Collector-to-Base Voltage Vopo (-)180 VV Collector-to-Emitter Voltage Vero (—) 160 Vv Emitter-to-Base Voltage VEBO (-)6 V Collector Current Ic (-)15 A Collector Current (Pulse) Iop (-)3 A Collector Dissipation Po Te=25'C 2 OW Junction Temperature Tj 150 Storage Temperaure Tstg —55.to +150 c Electrical Characteristics at Ta=25°C min typ. max unit Collector Cutoff Current Iopo Vop= (—) 120V, Ip=0 (-)10 pA Emitter Cutoff Current TeBo Vep= (—) 4V, Io=0 (-)10 pA DC Current Gain hE Vog= (—) 5V, I¢= (=) 300mA 60% 200% Gain-Bandwidth Product fp Vog= (~) 10V, Ig= (—)50mA 100 MHz Output Capacitance Cob Vep= (—) 10V, £=1MHz (30) pF 23 pF Base-to-Emitter Voltage Vee Vog= (—) 5V, Ie= (—) 10mA (-)15 Vv C-E Saturation Voltage Veg (sat) c= (~) 500mA, Ip= (—) 50mA (— 0.5) Vv 03 v C-B Breakdown Voltage Vipr)cpo [c= (—) 1mA, Ip=0 (—) 180 Vv C-E Breakdown Voltage Vier) ceo [c= (—) 1mA, Ipg= (—) 160 Vv E-B Breakdown Voltage Vipr)EBO Ig= (—) 1mA, Ic=0 (-)6 Vv Turn-ON Time ton See specified Test Circuit. (0.29) 0.15 us Fall Time te ” (0.19) 0.48 HS Storage Time tstg ” (0.48) 0.81 “Ss ¥ The 2SA1011/2SC2344 are classified by 300mA hg as follows :
60 D 120 | 100 E 200 |
Swithing Time Test Circuit 191 -——> ourrut Package Dimensions 2010C Inpur i (unit | mm) —— BI — 14.0 JL ‘er 40 a eal 2.7 Pw=20 . x te Foe cE: _ ow i 200 S74 3 — aE Y PP Ldeeeee +2Y 101g) =— 10Igy =I =0.5A $3.6 1.2 108 (For PNP, the polarity is reversed.) 4 at = tee tor unit (Resistance : 9 , Capasitance : F) x 3: Emitter =] JEDEC: TO-220AB EIAJ : SC~46 SANYO Electric Co:;Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 30196TS APS 8-3288/D251MH/3207AT/2265MY, TS No.544-1/3
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BE eee ere t+ tT TT \\] 5 2 Tot pO 0.01 0.7 1.0 10 2°93 S70 203 37 40 23 Collector Currentlg — A Collector-to-Emitter Voltage,Vog — V WNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss @ Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO. LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. : W Information (including circuit diagrams and circuit parameters) herein is for example only: it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March ,1996 . Specifications and information herein are subject to change without notice. eee No.544-3/3